参数资料
型号: ALD114804APCL
厂商: Advanced Linear Devices Inc
文件页数: 5/11页
文件大小: 0K
描述: MOSFET N-CH 10.6V QUAD 16PDIP
标准包装: 25
系列: EPAD®
FET 型: 4 N 通道(半桥)
FET 特点: 耗尽模式
漏极至源极电压(Vdss): 10.6V
电流 - 连续漏极(Id) @ 25° C: 12mA
开态Rds(最大)@ Id, Vgs @ 25° C: 500 欧姆 @ 3.6V
Id 时的 Vgs(th)(最大): 380mV @ 1µA
功率 - 最大: 500mW
安装类型: 通孔
封装/外壳: 16-DIP(0.300",7.62mm)
供应商设备封装: 16-PDIP
包装: 管件
其它名称: 1014-1053
TYPICAL PERFORMANCE CHARACTERISTICS
OUTPUT CHARACTERISTICS
DRAIN-SOURCE ON RESISTANCE
vs. DRAIN-SOURCE ON CURRENT
5
T A = +25 ° C
VGS-VGS(TH)=+5V
2500
TA = 25 ° C
4
VGS-VGS(TH)=+4V
2000
3
2
VGS-VGS(TH)=+3V
1500
1000
VGS = VGS(TH) +4V
VGS-VGS(TH)=+2V
1
VGS-VGS(TH)=+1V
500
VGS = VGS(TH) +6V
1000
0
0
2 4 6 8
DRAIN-SOURCE ON VOLTAGE (V)
10
0
10
100
DRAIN-SOURCE ON CURRENT ( μ A)
10000
20
FORWARD TRANSFER CHARACTERISTICS
2.5
TRANSCONDUCTANCE vs.
AMBIENT TEMPERATURE
15
T A = 25 ° C
V DS = +10V
VGS(TH) = -3.5V
VGS(TH) = -1.3V
VGS(TH) = -0.4V
2.0
1.5
10
5
VGS(TH) = 0.0V
VGS(TH) = +0.2V
VGS(TH) = +1.4V
1.0
0.5
0
VGS(TH) = +0.8V
0
-4
-2
0
2
4
6
8
10
-50
-25
0
25
50
75
100
125
GATE-SOURCE VOLTAGE (V)
SUBTHRESHOLD FORWARD TRANSFER
CHARACTERISTICS
AMBIENT TEMPERATURE ( ° C)
SUBTHRESHOLD FORWARD TRANSFER
CHARACTERISTICS
100000
10000
1000
TA = +25 ° C
VDS=+0.1V
VGS(TH)=-1.3V
VGS(TH)=0.0V
1000
100
V DS =0.1V
Slope ~ = 110mV/decade
100
10
10
1
1
0.1
0.01
-4
VGS(TH)=-3.5V
-3
-2
VGS(TH)=+0.2V
-1
0
VGS(TH)=+0.8V
1
2
0.1
0.01
V GS(th)
-0.5
V GS(th)
-0.4
V GS(th)
-0.3
V GS(th)
-0.2
V GS(th)
-0.1
V GS(th)
GATE-SOURCE VOLTAGE (V)
GATE-SOURCE VOLTAGE (V)
ALD114804/ALD114804A/ALD114904/ALD114904A
Advanced Linear Devices
5 of 11
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