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参数资料
| 型号： | ALD114913PAL |
| 厂商： | Advanced Linear Devices Inc |
| 文件页数： | 2/11页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 10.6V DUAL 8PDIP |
| 产品目录绘图： | 8-Pin Plastic Dip Package |
| 标准包装： | 50 |
| 系列： | EPAD® |
| FET 型： | 2 个 N 沟道（双） |
| FET 特点： | 耗尽模式 |
| 漏极至源极电压(Vdss)： | 10.6V |
| 电流 - 连续漏极(Id) @ 25° C： | 12mA |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 500 欧姆 @ 2.7V |
| Id 时的 Vgs(th)（最大）： | 1.26V @ 1µA |
| 功率 - 最大： | 500mW |
| 安装类型： | 通孔 |
| 封装/外壳： | 8-DIP（0.300"，7.62mm） |
| 供应商设备封装： | 8-PDIP |
| 包装： | 管件 |
| 其它名称： | 1014-1065 |
ABSOLUTE MAXIMUM RATINGS
Drain-Source voltage, V DS
Gate-Source voltage, V GS
Power dissipation
10.6V
10.6V
500 mW
Operating temperature range SCL, PCL, SAL, PAL package 0 ° C to +70 ° C
Storage temperature range
Lead temperature, 10 seconds
-65 ° C to +150 ° C
+260 ° C
CAUTION: ESD Sensitive Device. Use static control procedures in ESD controlled environment.
OPERATING ELECTRICAL CHARACTERISTICS
V+ = +5V V- = -5V TA = 25 ° C unless otherwise specified
ALD114813/ALD114913
Parameter
Gate Threshold Voltage
Offset Voltage
Symbol
VGS(th)
VOS
Min
-1.34
Typ
-1.30
7
Max
-1.26
20
Unit
V
mV
Test Conditions
IDS = 1 μ A, VDS = 0.1V
IDS = 1 μ A
VGS(th)1-VGS(th)2
Offset VoltageTempco
GateThreshold Voltage Tempco
TCVOS
TCVGS(th)
5
-1.7
μ V/ ° C
mV/ ° C
VDS1 = VDS2
ID = 1 μ A, VDS = 0.1V
0.0
+1.6
ID = 20 μ A, VDS = 0.1V
ID = 40 μ A, VDS = 0.1V
On Drain Current
IDS (ON)
12.0
mA
VGS = +8.2V, VDS = +5V
3.0
VGS = +2.7V, VDS = +5V
Forward Transconductance
GFS
1.4
mmho
VGS = +2.7V
VDS = +7.7V
Transconductance Mismatch
? GFS
1.8
%
Output Conductance
GOS
68
μ mho
VGS = +2.7V
VDS = +7.7V
Drain Source On Resistance
RDS (ON)
500
?
VDS = 0.1V
VGS = +2.7V
Drain Source On Resistance
RDS (ON)
1.3
K ?
VDS = 0.1V
VGS = +0.0V
Drain Source On Resistance
? RDS (ON)
7
%
Tolerance
Drain Source On Resistance
? RDS (ON)
0.5
%
Mismatch
Drain Source Breakdown
BVDSX
10
V
IDS = 1.0 μ A
Voltage
VGS = -2.3V
Drain Source Leakage Current 1
IDS (OFF)
10
400
pA
VGS = -2.3V, VDS =+5V
4
nA
TA = 125 ° C
Gate Leakage Current 1
IGSS
3
200
pA
VDS = 0V, VGS = 5V
1
nA
TA =125 ° C
Input Capacitance
Transfer Reverse Capacitance
CISS
CRSS
2.5
0.1
pF
pF
Turn-on Delay Time
Turn-off Delay Time
Crosstalk
ton
toff
10
10
60
ns
ns
dB
V+ = 5V, RL= 5K ?
V+ = 5V, RL= 5K ?
f = 100KHz
Notes:
1
Consists of junction leakage currents
ALD114813/ALD114913
Advanced Linear Devices
2 of 11
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相关代理商/技术参数 |
参数描述 |
|---|---|
| ALD114913SA | 制造商:ALD 制造商全称:Advanced Linear Devices 功能描述:QUAD/DUAL N-CHANNEL DEPLETION MODE EPAD MATCHED PAIR MOSFET ARRAYS |
| ALD114913SAL | 功能描述:MOSFET Dual EPAD(R) N-Ch RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| ALD114935 | 制造商:ALD 制造商全称:Advanced Linear Devices 功能描述:QUAD/DUAL N-CHANNEL DEPLETION MODE EPAD MATCHED PAIR MOSFET ARRAYS |
| ALD114935PA | 制造商:ALD 制造商全称:Advanced Linear Devices 功能描述:QUAD/DUAL N-CHANNEL DEPLETION MODE EPAD MATCHED PAIR MOSFET ARRAYS |
| ALD114935PAL | 功能描述:MOSFET Dual EPAD(R) N-Ch RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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