参数资料
型号: ALM-1106-TR2
元件分类: 放大器
英文描述: 900 MHz - 3500 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
封装: 2 X 2 MM, 1.10 MM HEIGHT, SURFACE MOUNT PACKAGE-6
文件页数: 5/10页
文件大小: 176K
代理商: ALM-1106-TR2
4
GPS LNA
RF IN
RF OUT
MAR 2005 TL.
Agilent
Technologies
H 0.010
W 0.0220
e 3.48
GND
VDD
SD
0.1
F
12
/ / 33nH
100pF
6.8pF
10nH
5.6nH
4.7nH
6.8pF
18k
Figure 4. Demoboard and Application Circuit Components
Figure 5. Demoboard schematic
+VDD
RF_OUT
VSD
RF_IN
Johanson 0402
Toko LL1005
BIAS
L
L3
R=
L=4.7 nH
C
C5
C=6.8 pF
L
L2
L=10 nH
L
L1
L=5.6 nH
R
R1
R=18 kOhm
C
C4
C=6.8 pF
C
C2
C
C3
C=0.1 uF
PRL
PRL1
L=33 nH
R=12 Ohm
C
C1
Amplifier2
AMP1
Notes
L1 and L2 form the input matching network.
The LNA module has a integrated coupling
and DC-blocking capacitors at the input and
output. Best noise performance is obtained
using high-Q wirewound inductors. This
circuit demonstrates that low noise figures
are obtainable with standard 0402 chip
inductors. Replacing L1, L2 and L3 with high-
Q wirewound inductors (eg. Cilcraft 0402CS
series) will yield 0.1dB lower NF and 0.6dB
higher Gain.
L3 is an output matching inductor.
C5 is a RF bypass capacitor.
PRL1 is a network that isolates the
measurement demoboard from external
disturbances. C3 and C4 mitigates the effect
of external noise pickup on the VSD and VDD
lines. These components are not required in
actual operation.
Bias control is achieved by either varying the
VSD voltage without R1 or fixing the VSD
voltage to VDD and varying R1. Typical value
for R1 is 18k Ohm for 8mA total current at
VDD=+2.85V.
Higher gain and IP3 performance can be
obtained by increasing the supply current.
This can be achieved by reducing the value
for R1 to obtain desired current.
For low voltage operation such as 1.5V or
1.0V, the R1 may be omitted and VSD
connected directly to the supply pins.
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