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参数资料
| 型号： | ALM-32320-TR2G |
| 元件分类： | 放大器 |
| 英文描述： | 3300 MHz - 3900 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER |
| 封装： | 10 X 7 MM, 1.10 MM HEIGHT, LEAD FREE PACKAGE-20 |
| 文件页数： | 4/11页 |
| 文件大小： | 208K |
| 代理商： | ALM-32320-TR2G |
2
LSL
USL
11
11.5
12
12.5
13
13.5
14
14.5
LSL
32.5
33
33.5
34
34.5
35
35.5
40
42
44
46
48
50
52
54
LSL
USL
.600
.700
.800
.900
1.000
LSL
47
48
49
50
51
52
53
54
55
Product Consistency Distribution Charts[5]
Figure 1. Ids; LSL = 690mA, nominal = 810mA, USL = 910mA
Figure 2. OIP3; LSL = 48dBm, nominal = 51dBm
Figure 3. P1dB; LSL = 33dBm, nominal = 34.5dBm
Figure 4. PAE at P1dB; nominal = 46.6%
Absolute Maximum Rating[2] TA=25C
Symbol
Parameter
Units
Absolute
Max.
Vdd,max
Device Voltage, RF output to ground
V
5.5
Ids,max
Device Drain Current
mA
1500
Vctrl,max
Control Voltage
V
5.5
Pin,max
CW RF Input Power
dBm
28
Pdiss
Total Power Dissipation [4]
W
8.25
Tj, max
Junction Temperature
°C
150
TSTG
Storage Temperature
°C
-65 to 150
Thermal Resistance [3] θjc = 15C/W
(Vdd = 5V, Ids = 810mA, Tc = 85°C)
Notes:
2. Operation of this device in excess of any of
these limits may cause permanent damage.
3. Thermal resistance measured using Infra-Red
measurement technique.
4. This is limited by maximum Vdd and Ids.
Derate 66.7mW/ C for Tc > 26.2C.
Figure 5. Gain; LSL=11.2dB, Nominal = 12.6dB, USL=14.2dB
Note:
5. Distribution data sample size is 500 samples taken from 3 dierent
wafer lots. TA = 25°C, Vdd = 5V, Vctrl = 5V, RF performance at 3.5GHz
unless otherwise specied. Future wafers allocated to this product
may have nominal values anywhere between the upper and lower
limits.
6. Measurements are made on a production test board. Input trace
losses have not been de-embedded from actual measurements.
CPK = 0.80
Std Dev = 0.04
CPK = 0.95
Std Dev = 0.889
CPK = 2.495
Std Dev = 0.134
CPK = 2.011
Std Dev = 0.184
Std Dev = 1.504
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