参数资料
型号: ALT6704RM45P9
厂商: ANADIGICS INC
元件分类: 放大器
英文描述: 1710 MHz - 1785 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER
封装: 3 X 3 MM, 1 MM HEIGHT, ROHS COMPLIANT, M45, 10 PIN
文件页数: 9/11页
文件大小: 512K
代理商: ALT6704RM45P9
Data Sheet- Rev 2.2
07/2011
ALT6704
7
PERFORMANCE DATA PLOTS:
(LTEOperationat1747.5MHzand50V system)
0
5
10
15
20
25
30
35
0
5
10
15
20
25
30
Gain
(dB)
Pout (dBm)
Figure 4: LTE Gain (dB) over Temperature
(Vbatt=VCC=3.4V)
-30C3.4Vcc
25C3.4Vcc
90C3.4Vcc
Figure 3: LTE Gain (dB) over Temperature
(VBATT=VCC=3.4V)
0
5
10
15
20
25
30
0
5
10
15
20
25
30
Gain
(dB)
Pout (dBm)
Figure 5: LTE Gain (dB) over Voltage
(Tc=25C)
25C3.2Vcc
25C3.4Vcc
25C4.2Vcc
Figure 4: LTE Gain (dB) over Votlage
(TC=258C)
0
5
10
15
20
25
30
35
40
45
0
5
10
15
20
25
30
Efficiency
(%)
Pout (dBm)
Figure 6: LTE PAE (%) over Temperature
(Vbatt=VCC=3.4V)
-30 3.4cc
25C3.4Vcc
90C3.4Vcc
Figure 5: LTE PAE (%) over Temperature
(VBATT=VCC=3.4V)
0
5
10
15
20
25
30
35
40
45
0
5
10
15
20
25
30
Efficiency
(%)
Pout (dBm)
Figure 7: LTE PAE (%) over Voltage
(Tc=25C)
25C3.2Vcc
25C3.4Vcc
25C4.2Vcc
Figure 6: LTE Gain (dB) over Temperature
(VBATT=VCC=3.4V)
-60
-55
-50
-45
-40
-35
-30
-25
-20
0
5
10
15
20
25
30
ACLR1(5MHzdBc)
Pout (dBm)
Figure8:LTEACRL1(dBc)overTemperature
(Vbatt=VCC=3.4V)
-30C3.4Vcc
25C3.4Vcc
90C3.4Vcc
Figure 7: LTE ACLR1 (dBc) over Temperature
(VBATT=VCC=3.4V)
-60
-55
-50
-45
-40
-35
-30
-25
-20
0
5
10
15
20
25
30
ACLR1(5MHzdBc)
Pout (dBm)
Figure9:LTEACLR1(dBc)overVoltage
(Tc=25C)
25C3.2Vcc
25C3.4Vcc
25C4.2Vcc
Figure8:LTEGain(dB)overTemperature
(VBATT=VCC=3.4V)
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