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参数资料
| 型号： | AM003536WM-FM-R |
| 元件分类： | 放大器 |
| 英文描述： | 10 MHz - 3500 MHz RF/MICROWAVE WIDE BAND HIGH POWER AMPLIFIER |
| 封装： | ROHS COMPLIANT, CERAMIC PACKAGE-10 |
| 文件页数： | 2/10页 |
| 文件大小： | 282K |
| 代理商： | AM003536WM-FM-R |
E-mail: products@amcomusa.com
Tel. (301) 353-8400 Fax. (301) 353-8401
www.amcomusa.com
401 Professional Drive, Gaithersburg, MD 20879
AMCOM Communications, Inc.
AM003536WM-BM/FM-R
December 2008
Rev 4
TEST CIRCUIT for BM Package
Important Notes:
1- The +20V Bias to the output port could be provided via a bias tee or suitable chokes to be soldered on the
board. Inductance of choke should be large enough to have high impedance at lowest frequency of
operation (300nH is adequate).
2- Recommended current biases are 150mA and 500mA for the first stage and second stage respectively.
Gate biases are for reference only. At Vdd1 & Vdd2 = +20V, Vgs1 & Vgs2 values are -1.0V and -0.75V
respectively to obtain these desired currents. Vgs1 & Vgs2 could be adjusted to vary the currents going
thru the first stage (Vdd1 pin) and the second stage (Vdd2 pin) respectively.
3- Do not apply Vdd1 & Vdd2 without proper negative voltages on Vgs1 & Vgs2.
4- The currents flowing out of the Vgs1 & Vgs2 pins are less than 2mA & 5mA respectively at P1dB.
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