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参数资料
| 型号： | AM0912-080 |
| 厂商： | ADVANCED SEMICONDUCTOR INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | L BAND, Si, NPN, RF POWER TRANSISTOR |
| 封装： | 0.400 X 0.400 INCH, HERMETIC SEALED PACKAGE-2 |
| 文件页数： | 1/2页 |
| 文件大小： | 97K |
| 代理商： | AM0912-080 |
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. B
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004
1/2
Specifications are subject to change without notice.
CHARACTERISTICS TC = 25 OC
SYMBOL
TEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
UNITS
BV
CBO
IC = 40 mA
65
V
BV
CER
IC = 40 mA
RBE = 10
65
V
BV
EBO
IE = 10 mA
3.0
V
I
CBO
VCB = 50 V
12
mA
h
FE
VCE = 5 V
IC = 2.0 A
20
120
---
POUT
P
G
ηηηη
C
VCC = 50 V
f = 960 to 1215 MHz
PIN = 13 W
Pulse Width = 10
S
Duty Cycle = 10%
90
8.4
38
100
44
W
dB
%
PACKAGE - .400 x .400 2NLFL
1 = COLLECTER
2 & 4 = BASE
3 = EMITTER
RF POWER TRANSISTOR
AM0912-080
DESCRIPTION:
The
ASI AM0912-080 is a Common
Base Transistor Designed for DME,
TACAN and IFF Pulse Power Amplifier
Applications.
FEATURES INCLUDE:
Gold Metallization
Hermetic Package
Input/Output Matching
MAXIMUM RATINGS
IC
7.0 A
VCB
50 V
P
DISS
220 W @ TC = 25
OC
TJ
-65
OC to +200 OC
TSTG
-65
OC to +200 OC
θθθθ
JC
0.80
OC/W
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相关代理商/技术参数 |
参数描述 |
|---|---|
| AM0912-150 | 制造商:ASI 制造商全称:ASI 功能描述:FR POWER TRANSISTOR |
| AM0912-300 | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:AVIONICS APPLICATIONS RF & MICROWAVE TRANSISTORS |
| AM0920 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| AM0920OEM | 制造商:Intel 功能描述: |
| AM1 | 功能描述:按钮开关 Push Button Oper, 30 mm,Non Ill. Mush., Mom., White RoHS:否 制造商:C&K Components 触点形式:2 NC - 2 NO 开关功能:ON ? OFF 电流额定值:4 A 电压额定值 AC:12 V to 250 V 电压额定值 DC:12 V to 50 V 功率额定值: 安装风格:Through Hole 照明:Illuminated 照明颜色:None IP 等级:IP 40 端接类型:Solder 触点电镀:Silver 执行器:Square 盖颜色: 封装: 可燃性等级:UL 94 V-0 |
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