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参数资料
| 型号： | AM1011-500 |
| 厂商： | ADVANCED SEMICONDUCTOR INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | L BAND, Si, NPN, RF POWER TRANSISTOR |
| 封装： | 0.400 X 0.600 INCH, HERMETIC SEALED, FM-2 |
| 文件页数： | 1/1页 |
| 文件大小： | 37K |
| 代理商： | AM1011-500 |
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004
1/1
Specifications are subject to change without notice.
CHARACTERISTICS TC = 25 OC
SYMBOL
TEST CONDITIONS
MINIMUM
TYPICAL MAXIMUM
UNITS
BVCBO
IC = 50 mA
70
V
BVCES
IC = 50 mA
70
V
ICES
VCE = 50 V
40
mA
BVEBO
IE = 30 mA
3.0
V
hFE
VCE = 5.0 V
IC = 1.0 A
10
200
---
PG
ηηηη
C
VCE = 50 V
POUT = 500 W
f = 1090 MHz
Pulse Width = 32
S
Duty Cycle = 2%
8.5
40
8.5
35
dB
%
NPN RF POWER TRANSISTOR
AM1011-500
DESCRIPTION:
The
ASI AM1011-500 is a Common
Base Device Designed for Pulsed L-
Band Radar Amplifier Applications.
FEATURES INCLUDE:
Input/Output Matching
Gold Metallization
Hermetic Metal/Ceramic Package
MAXIMUM RATINGS
IC
27 A
VCBO
55 V
PDISS
1360 W @ TC = 25
OC
TJ
-65
OC to+200 OC
TSTG
-65
OC to+200 OC
θθθθ
JC
0.11
OC/W
PACKAGE STYLE 400 X 600 2L FLG
MINIMUM
Inches/m
m
MAXIMUM
Inches/mm
A
.195/4.95
.205/5.21
B
.130/3.30
C
.380/9.65
.390/9.91
D
.570/14.48
E
.593/15.06
.607/15.42
F
.790/20.07
.810/20.57
G
.995/25.27
1.005/25.53
H
.002/0.05
.006/0.15
I
.055/1.40
.065/1.65
J
.110/2.79
.130/3.30
K
.230/5.84
L
.393/9.98
.407/10.34
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