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参数资料
| 型号： | AM1214-300 |
| 厂商： | ADVANCED SEMICONDUCTOR INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | L BAND, Si, NPN, RF POWER TRANSISTOR |
| 封装： | 0.400 INCH, FM-2 |
| 文件页数： | 1/2页 |
| 文件大小： | 253K |
| 代理商： | AM1214-300 |
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. D
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004
1/2
Specifications are subject to change without notice.
CHARACTERISTICS T
C = 25 °C
SYMBOL
NONE
TEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
UNITS
BVCBO
IC = 50 mA
65
V
BVCES
IC = 50 mA
65
V
BVEBO
IE = 15 mA
3.0
V
ICES
VCE = 50 V
30
mA
hFE
VCE = 5.0 V
IC = 5.0 A
10
---
---
PG
ηC
POUT
VCC = 50 V
PIN = 63 W
f = 1235 to 1365 MHz
6.3
40
270
6.8
45
300
dB
%
W
Conditions: Pulse Width = 50 S
Duty Cycle = 4%
NPN SILICON RF POWER TRANSISTOR
AM1214-300
DESCRIPTION:
The
ASI AM1214-300 is Designed for
1200 – 1400 MHz, L-Band Applications.
FEATURES:
Internal Input/Output Matching Network
Common Base
PG = 6.5 db at 325 W/1400 MHz
Omnigold Metalization System
MAXIMUM RATINGS
IC
18.75 A
VCC
55 V
PDISS
730 W @ TC = 25 °C
TJ
-65 °C to +250 °C
TSTG
-65 °C to +200 °C
θJC
0.24 °C/W
PACKAGE STYLE .400 2L FLG(A)
MIN IMU M
inches / m m
.100 / 2.54
.376 / 9.55
.050 / 1.27
.110 / 2.79
B
C
D
E
F
G
A
M AXIM U M
.120 / 3.05
.130 / 3.30
.396 / 10.06
inches / m m
.193 / 4.90
H
DIM
K
L
I
J
.490 / 12.45
.690 / 17.53
.003 / 0.08
.510 / 12.95
.710 / 18.03
.006 / 0.18
N
M
.118 / 3.00
.131 / 3.33
.135 / 3.43
.145 / 3.68
.072 / 1.83
.052 / 1.32
P
.230 / 5.84
G
C
N
2xR
4x .062 x 45°
I
E
P
M
F
L
H
J
K
2xB
D
.040 x 45°
A
.100 / 2.54
.395 / 10.03
.407 / 10.34
.890 / 22.61
.910 / 23.11
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