参数资料
型号: AM28F010-70JIB
厂商: ADVANCED MICRO DEVICES INC
元件分类: PROM
英文描述: 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory
中文描述: 128K X 8 FLASH 12V PROM, 70 ns, PQCC32
封装: PLASTIC, LCC-32
文件页数: 21/35页
文件大小: 492K
代理商: AM28F010-70JIB
Am28F010
21
ABSOLUTE MAXIMUM RATINGS
Storage Temperature
Plastic Packages . . . . . . . . . . . . . . . –65
°
C to +125
°
C
Ambient Temperature
with Power Applied. . . . . . . . . . . . . .–55
°
C to + 125
°
C
Voltage with Respect To Ground
All pins except A9 and V
PP
(Note 1) .–2.0 V to +7.0 V
V
CC
(Note 1). . . . . . . . . . . . . . . . . . . .–2.0 V to +7.0 V
A9 (Note 2). . . . . . . . . . . . . . . . . . . .–2.0 V to +14.0 V
V
PP
(Note 2). . . . . . . . . . . . . . . . . . .–2.0 V to +14.0 V
Output Short Circuit Current (Note 3) . . . . . . 200 mA
Notes:
1. Minimum DC voltage on input or I/O pins is –0.5 V During
voltage transitions, inputs may overshoot V
SS
to –2.0 V for
periods of up to 20 ns. Maximum DC voltage on input and
I/O pins is V
CC
+ 0.5 V During voltage transitions, input
and I/O pins may overshoot to V
CC
+ 2.0V for periods up
to 20ns.
2. Minimum DC input voltage on A9 and V
PP
pins is -0.5 V
During voltage transitions, A9 and V
PP
may overshoot
V
SS
to –2.0 V for periods of up to 20 ns. Maximum DC
input voltage on A9 and V
PP
is +13.0 V which may
overshoot to 14.0 V for periods up to 20 ns.
3. No more than one output shorted to ground at a time.
Duration of the short circuit should not be greater than
one second.
Stresses above those listed under “Absolute Maximum Rat-
ings” may cause permanent damage to the device. This is a
stress rating only; functional operation of the device at these
or any other conditions above those indicated in the opera-
tional sections of this specification is not implied. Exposure of
the device to absolute maximum rating conditions for
extended periods may affect device reliability.
OPERATING RANGES
Commercial (C) Devices
Ambient Temperature (T
A
). . . . . . . . . . . .0°C to +70°C
Industrial (I) Devices
Ambient Temperature (T
A
). . . . . . . . . .–40°C to +85°C
Extended (E) Devices
Ambient Temperature (T
A
). . . . . . . . .–55°C to +125°C
V
CC
Supply Voltages
V
CC
. . . . . . . . . . . . . . . . . . . . . . . . +4.50 V to +5.50 V
V
PP
Voltages
Read . . . . . . . . . . . . . . . . . . . . . . . . –0.5 V to +12.6 V
Program, Erase, and Verify. . . . . . +11.4 V to +12.6 V
Operating ranges define those limits between which the
functionality of the device is guaranteed.
相关PDF资料
PDF描述
AM28F010-70PC 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory
AM28F010-70PCB 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory
AM28F010-70PE 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory
AM28F010-70PEB 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory
AM28F010-70PI 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory
相关代理商/技术参数
参数描述
AM28F010-70PC 制造商:AMD 制造商全称:Advanced Micro Devices 功能描述:1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory
AM28F010-70PCB 制造商:AMD 制造商全称:Advanced Micro Devices 功能描述:1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory
AM28F010-70PE 制造商:AMD 制造商全称:Advanced Micro Devices 功能描述:1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory
AM28F010-70PEB 制造商:AMD 制造商全称:Advanced Micro Devices 功能描述:1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory
AM28F010-70PI 制造商:AMD 制造商全称:Advanced Micro Devices 功能描述:1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory