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参数资料
| 型号： | AM28F010-70PCB |
| 厂商： | ADVANCED MICRO DEVICES INC |
| 元件分类： | PROM |
| 英文描述： | 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory |
| 中文描述： | 128K X 8 FLASH 12V PROM, 70 ns, PDIP32 |
| 封装： | PLASTIC, DIP-32 |
| 文件页数： | 6/35页 |
| 文件大小： | 492K |
| 代理商： | AM28F010-70PCB |
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6
Am28F010
PIN DESCRIPTION
A0–A16
A
ddress Inputs for memory locations. Internal latches
hold addresses during write cycles.
CE
#
(E
#
)
Chip Enable active low input activates the chip’s con-
trol logic and input buffers. Chip Enable high will dese-
lect the device and operates the chip in stand-by mode.
DQ0–DQ7
Data Inputs during memory write cycles. Internal
latches hold data during write cycles. Data Outputs
during memory read cycles.
NC
No Connect-corresponding pin is not connected
internally to the die.
OE
#
(G
#
)
Output Enable active low input gates the outputs of the
device through the data buffers during memory read
cycles. Output Enable is high during command
sequencing and program/erase operations.
V
CC
Power supply for device operation. (5.0 V
±
5% or 10%)
V
PP
Program voltage input. V
PP
must be at high voltage in
order to write to the command register. The command
register controls all functions required to alter the mem-
ory array contents. Memory contents cannot be altered
when V
PP
≤
V
CC
+2 V.
V
SS
Ground
WE
#
(W
#
)
Write Enable active low input controls the write function
of the command register to the memory array. The tar-
get address is latched on the falling edge of the Write
Enable pulse and the appropriate data is latched on the
rising edge of the pulse. Write Enable high inhibits
writing to the device.
相关PDF资料 |
PDF描述 |
|---|---|
| AM28F010-70PE | 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory |
| AM28F010-70PEB | 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory |
| AM28F010-70PI | 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory |
| AM28F010-70PIB | 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory |
| AM28F010-90EC | 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory |
相关代理商/技术参数 |
参数描述 |
|---|---|
| AM28F010-70PE | 制造商:AMD 制造商全称:Advanced Micro Devices 功能描述:1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory |
| AM28F010-70PEB | 制造商:AMD 制造商全称:Advanced Micro Devices 功能描述:1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory |
| AM28F010-70PI | 制造商:AMD 制造商全称:Advanced Micro Devices 功能描述:1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory |
| AM28F010-70PIB | 制造商:AMD 制造商全称:Advanced Micro Devices 功能描述:1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory |
| AM28F010-90C3DC | 制造商:未知厂家 制造商全称:未知厂家 功能描述:x8 Flash EEPROM |
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