- 您现在的位置：买卖IC网 > PDF目录366380 > AM28F010A-150EEB (ADVANCED MICRO DEVICES INC) 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms PDF资料下载
参数资料
| 型号： | AM28F010A-150EEB |
| 厂商： | ADVANCED MICRO DEVICES INC |
| 元件分类： | PROM |
| 英文描述： | 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms |
| 中文描述： | 128K X 8 FLASH 12V PROM, 150 ns, PDSO32 |
| 封装： | TSOP-32 |
| 文件页数： | 25/35页 |
| 文件大小： | 464K |
| 代理商： | AM28F010A-150EEB |
第1页第2页第3页第4页第5页第6页第7页第8页第9页第10页第11页第12页第13页第14页第15页第16页第17页第18页第19页第20页第21页第22页第23页第24页当前第25页第26页第27页第28页第29页第30页第31页第32页第33页第34页第35页
Am28F010A
25
AC Characteristics—Write (Erase/Program) Operations
Notes:
1. Read timing characteristics during read/write operations are the same as during read-only operations. Refer to AC
Characteristics for Read Only operations.
2.
Embedded Program Operation of 14 μs consists of 10 μs program pulse and 4 μs write recovery before read. This is the
minimum time for one pass through the programming algorithm.
3. Embedded Erase operation of 5 sec consists of 4 sec array pre-programming time and one sec array erase time. This is a
typical time for one embedded erase operation.
4. Not 100% tested.
Parameter Symbols
Am28F010A Speed Options
JEDEC
Standard
Description
-70
-90
-120
-150
-200
Unit
t
AVAV
t
WC
Write Cycle Time (Note 4)
Min
70
90
120
150
200
ns
t
AVWL
t
AS
Address Setup Time
Min
0
0
0
0
0
ns
t
WLAX
t
AH
Address Hold Time
Min
45
45
50
60
75
ns
t
DVWH
t
DS
Data Setup Time
Min
45
45
50
50
50
ns
t
WHDX
t
DH
Data Hold Time
Min
10
10
10
10
10
ns
t
OEH
Output Enable Hold Time for Embedded
Algorithm only
Min
10
10
10
10
10
ns
t
GHWL
Read Recovery TIme Before Write
Min
0
0
0
0
0
ns
t
ELWLE
t
CSE
CE
#
Embedded Algorithm Setup TIme
Min
20
20
20
20
20
ns
t
WHEH
t
CH
CE
#
Hold TIme
Min
0
0
0
0
0
ns
t
WLWH
t
WP
Write Pulse Width
Min
45
45
50
60
60
ns
t
WHWL
t
WPH
Write Pulse Width High
Min
20
20
20
20
20
ns
t
WHWH3
Embedded Program Operation (Note 2)
Min
14
14
14
14
14
μs
t
WHWH4
Embedded Erase Operation (Note 3)
Typ
5
5
5
5
5
sec
t
VPEL
V
PP
Setup Time to Chip Enable Low (Note 4)
Min
100
100
100
100
100
ns
t
VCS
V
CC
Setup TIme (Note 4)
Min
50
50
50
50
50
μs
t
VPPR
V
PP
Rise Time (Note 4) 90% V
PPH
Min
500
500
500
500
500
ns
t
VPPF
V
PP
Fall Time (Note 4) 90% V
PPL
Min
500
500
500
500
500
ns
t
LKO
V
CC
< V
LKO
to Reset (Note 4)
Min
100
100
100
100
100
ns
相关PDF资料 |
PDF描述 |
|---|---|
| AM28F010A-150EI | 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms |
| AM28F010A-150FC | 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms |
| AM28F010A-150FE | 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms |
| AM28F010A-150FEB | 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms |
| AM28F010A-150FI | 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms |
相关代理商/技术参数 |
参数描述 |
|---|---|
| AM28F010A-150EI | 制造商:AMD 制造商全称:Advanced Micro Devices 功能描述:1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms |
| AM28F010A-150EIB | 制造商:AMD 制造商全称:Advanced Micro Devices 功能描述:1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms |
| AM28F010A-150FC | 制造商:AMD 制造商全称:Advanced Micro Devices 功能描述:1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms |
| AM28F010A-150FCB | 制造商:AMD 制造商全称:Advanced Micro Devices 功能描述:1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms |
| AM28F010A-150FE | 制造商:AMD 制造商全称:Advanced Micro Devices 功能描述:1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms |
发布紧急采购，3分钟左右您将得到回复。