参数资料
型号: AM29BDD160GB64CKK
厂商: ADVANCED MICRO DEVICES INC
元件分类: PROM
英文描述: 16 Megabit (1 M x 16-bit/512 K x 32-Bit), CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory
中文描述: 512K X 32 FLASH 2.7V PROM, 64 ns, PQFP80
封装: LEAD FREE, PLASTIC, QFP-80
文件页数: 10/80页
文件大小: 3476K
代理商: AM29BDD160GB64CKK
16
Am29BDD160G
Table 5. Am29BDD160 Autoselect Codes (High Voltage Method)
L = Logic Low = V
IL, H = Logic High = VIH, SA = Sector Address, X = Don’t care.
Note: The autoselect codes may also be accessed in-system via command sequences. See Tables 18 and 20.
Asynchronous Read Operation (Non-
Burst)
The device has two control functions which must be
satisfied in order to obtain data at the outputs. CE#
is the power control and should be used for device
selection. OE# is the output control and should be
used to gate data to the output pins if the device is
selected. The device is power-up in an asynchronous
read mode. In the asynchronous mode the device
has two control functions which must be satisfied in
order to obtain data at the outputs. CE# is the power
control
and should be used for device selection.
OE# is the output control and should be used to gate
data to the output pins if the device is selected.
Address access time (t
ACC) is equal to the delay from
stable addresses to valid output data. The chip en-
able access time (t
CE) is the delay from the stable
addresses and stable CE# to valid data at the output
pins. The output enable access time is the delay
from the falling edge of OE# to valid data at the out-
put pins (assuming the addresses have been stable
for at least t
ACC–tOEtime).
6. Note: Operation is shown for the 32-bit data bus. For the 16-bit data bus, A-1 is required.
Figure 1. Asynchronous Read Operation
Description
CE#
OE# WE#
A18
to
A11
A10
A9
A8
A7
A6
A5
to
A4
A3
A2
A1
A0
DQ7 to DQ0
Manufacturer ID:
AMD
L
H
X
VIO
X
L
X
L
0001h
A
u
to
se
le
ct
D
ev
ice
Co
de
Read Cycle 1
L
H
X
VIO
X
L
X
L
H
007Eh
Read Cycle 2
L
H
X
VIO
X
L
H
L
0008h
Read Cycle 3
L
H
X
VIO
X
L
H
0000h (top
boot block)
0001h (bottom
boot block)
PPB Protection
Status
L
H
SA
X
VIO
X
L
H
L
0000h
(unprotected)
0001h
(protected)
CE#
CLK
ADV#
A0-A18
DQ0-DQ31
OE#
WE#
IND/WAIT#
相关PDF资料
PDF描述
AM29BDD160GB65APBE 16 Megabit (1 M x 16-bit/512 K x 32-Bit), CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory
AM29BDD160GB65APBI 16 Megabit (1 M x 16-bit/512 K x 32-Bit), CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory
AM29BDD160GT54DKE 16 Megabit (1 M x 16-bit/512 K x 32-Bit), CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory
AM29BDD160GT54DKF 16 Megabit (1 M x 16-bit/512 K x 32-Bit), CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory
AM29BDD160GT54DKI 16 Megabit (1 M x 16-bit/512 K x 32-Bit), CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory
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