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参数资料
| 型号： | AM29BDD160GT54DKI |
| 厂商： | ADVANCED MICRO DEVICES INC |
| 元件分类： | PROM |
| 英文描述： | 16 Megabit (1 M x 16-bit/512 K x 32-Bit), CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory |
| 中文描述： | 512K X 32 FLASH 2.7V PROM, 54 ns, PQFP80 |
| 封装： | PLASTIC, QFP-80 |
| 文件页数： | 5/80页 |
| 文件大小： | 3476K |
| 代理商： | AM29BDD160GT54DKI |
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Am29BDD160G
11
DEVICE BUS OPERATIONS
This section describes the requirements and use of
the device bus operations, which are initiated
through the internal command register. The com-
mand register itself does not occupy any addressable
memory location. The register is composed of
latches that store the commands, along with the ad-
dress and data information needed to execute the
command. The contents of the register serve as in-
puts to the internal state machine. The state
machine outputs dictate the function of the device.
Table 1 lists the device bus operations, the inputs
and control levels they require, and the resulting
output. The following subsections describe each of
these operations in further detail.
相关PDF资料 |
PDF描述 |
|---|---|
| AM29BDD160GT54DKK | 16 Megabit (1 M x 16-bit/512 K x 32-Bit), CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory |
| AM29BDD160GT54DPBE | 16 Megabit (1 M x 16-bit/512 K x 32-Bit), CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory |
| AM29BDD160GT65AKE | 16 Megabit (1 M x 16-bit/512 K x 32-Bit), CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory |
| AM29BDD160GT65AKF | 16 Megabit (1 M x 16-bit/512 K x 32-Bit), CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory |
| AM29BDD160GT65AKI | 16 Megabit (1 M x 16-bit/512 K x 32-Bit), CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory |
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参数描述 |
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