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| 型号： | AM29BL162CB-80DTI1 |
| 厂商： | Spansion Inc. |
| 英文描述： | 16 Megabit (1 M x 16-Bit) CMOS 3.0 Volt-only, Burst-Mode, Boot Sector Flash Memory-Die Revision 1 |
| 中文描述： | 16兆位（1米× 16位），3.0伏的CMOS只，突发性，引导扇区闪存模式模修订1 |
| 文件页数： | 16/19页 |
| 文件大小： | 151K |
| 代理商： | AM29BL162CB-80DTI1 |
S U P P L E M E N T
Am29BL162C Known Good Die
15
PHYSICAL SPECIFICATIONS
Die dimensions . . . . . . . . . . 269.7 mils x 303.94 mils
. . . . . . . . . . . . . . . . . . . . . . . . . . 6.85 mm x 7.72 mm
Die Thickness . . . . . . . . . . . . . . . . . . . . . . . . .500 μm
Bond Pad Size . . . . . . . . . . . . . . .4.69 mils x 4.69mils
. . . . . . . . . . . . . . . . . . . . . . . . . . 115.9 μm x 115.9 μm
Pad Area Free of Passivation . . . . . . . . . .13.99 mils
2
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9,025 μm
2
Pads Per Die . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .51
Bond Pad Metalization. . . . . . . . . . . . . . . . . . . . Al/Cu
Die Backside . . . . . . . . . . . . . . . . . . . . . . . . No metal,
may be grounded (optional)
Passivation. . . . . . . . . . . . . . . . . . Nitride/SOG/Nitride
DC OPERATING CONDITIONS
V
CC
(Supply Voltage). . . . . . . . . . . . . . .3.0 V to 3.6 V
Operating Temperature
Industrial . . . . . . . . . . . . . . . . . . . –40
°
C to +85
°
C
Extended . . . . . . . . . . . . . . . . . . –55
°
C to +125
°
C
Super Extended. . . . . . . . . . . . . –55
°
C to +145
°
C
MANUFACTURING INFORMATION
Manufacturing. . . . . . . . . . . . . . . . . . . . . . . . . . .FASL
Wafer Sort Test . . . . . . . . . . . Sunnyvale, CA, USA &
. . . . . . . . . . . . . . . . . . . . . . . . . . . . Penang, Malaysia
Manufacturing ID (Bottom Boot) . . . . . . . . .98849ABK
Preparation for Shipment . . . . . . . . Penang, Malaysia
Fabrication Process . . . . . . . . . . . . . . . . . . . CS39LS
Die Revision . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
SPECIAL HANDLING INSTRUCTIONS
Processing
Do not expose KGD products to ultraviolet light or
process them at temperatures greater than 250
°
C.
Failure to adhere to these handling instructions will
result in irreparable damage to the devices. For best
yield, AMD recommends assembly in a Class 10K
clean room with 30% to 60% relative humidity.
Storage
Store at a maximum temperature of 30
°
C in a nitrogen-
purged cabinet or vacuum-sealed bag. Observe all
standard ESD handling procedures.
DC PARAMETER EXCEPTIONS
The following specifications replace those given in the Am29BL162 data sheet (publication number 22142):
Notes:
2. Maximum I
CC
specifications are tested with V
CC
= V
CC
max.
3. Automatic sleep mode enables the low power mode when addresses remain stable for t
ACC
+ 30 ns.
Parameter
Description
Test Conditions
Typ
Max
Unit
I
CC3
V
CC
Standby Current (Note 2)
CE#, RESET# = V
CC
±
0.3 V
22
35
μA
I
CC4
V
CC
Standby Current During Reset
(Note 2)
RESET# = V
SS
±
0.3 V
22
35
μA
I
CC5
Automatic Sleep Mode
(Notes 2, 3)
V
IH
= V
CC
±
0.3 V;
V
IL
= V
SS
±
0.3 V
OE# = V
IH
30
50
μA
OE# = V
IL
30
50
μA
相关PDF资料 |
PDF描述 |
|---|---|
| AM29BL162CB-80DWE1 | 16 Megabit (1 M x 16-Bit) CMOS 3.0 Volt-only, Burst-Mode, Boot Sector Flash Memory-Die Revision 1 |
| AM29BL162CB-80DWH1 | 16 Megabit (1 M x 16-Bit) CMOS 3.0 Volt-only, Burst-Mode, Boot Sector Flash Memory-Die Revision 1 |
| AM29BL162CB-80DWI1 | 16 Megabit (1 M x 16-Bit) CMOS 3.0 Volt-only, Burst-Mode, Boot Sector Flash Memory-Die Revision 1 |
| AM29BL162CB-9DGE1 | 16 Megabit (1 M x 16-Bit) CMOS 3.0 Volt-only, Burst-Mode, Boot Sector Flash Memory-Die Revision 1 |
| AM29BL162CB-9DGH1 | 16 Megabit (1 M x 16-Bit) CMOS 3.0 Volt-only, Burst-Mode, Boot Sector Flash Memory-Die Revision 1 |
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