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参数资料
| 型号： | AM29BL162CB-9DGE1 |
| 厂商： | Spansion Inc. |
| 英文描述： | 16 Megabit (1 M x 16-Bit) CMOS 3.0 Volt-only, Burst-Mode, Boot Sector Flash Memory-Die Revision 1 |
| 中文描述： | 16兆位（1米× 16位），3.0伏的CMOS只，突发性，引导扇区闪存模式模修订1 |
| 文件页数： | 2/19页 |
| 文件大小： | 151K |
| 代理商： | AM29BL162CB-9DGE1 |
SUPPLEMENT
Publication#
23783
Issue Date:
April 29, 2003
Rev:
A
Amendment/
+4
Am29BL162C Known Good Die
16 Megabit (1 M x 16-Bit)
CMOS 3.0 Volt-only, Burst-Mode, Boot Sector Flash Memory—Die
Revision 1
DISTINCTIVE CHARACTERISTICS
■
32 words sequential with wrap around (linear
32), bottom boot
■
One 8 Kword, two 4 Kword, one 112 Kword, and
seven 128 Kword sectors
■
Single power supply operation
— Regulated voltage range: 3.0 to 3.6 volt read and
write operations and for compatibility with high
performance 3.3 volt microprocessors
■
Read access times
22 ns burst access
(at extended temperature range)
80 ns initial/random access
■
Alterable burst length via BAA# pin
■
Power dissipation (typical)
— Burst Mode Read: 15 mA @ 25 MHz,
20 mA @ 33 MHz
— Program/Erase: 20 mA
— Standby mode, CMOS: 22 μA
■
5 V-tolerant data, address, and control signals
■
Sector Protection
— Implemented using in-system or via
programming equipment
— Temporary Sector Unprotect feature allows code
changes in previously locked sectors
■
Unlock Bypass Program Command
— Reduces overall programming time when issuing
multiple program command sequences
■
Embedded Algorithms
— Embedded Erase algorithm automatically
preprograms and erases the entire chip or any
combination of designated sectors
— Embedded Program algorithm automatically
writes and verifies data at specified addresses
■
Minimum 100,000 erase cycle guarantee
per sector
■
20-year data retention at 125
°
C
■
Compatibility with JEDEC standards
— Pinout and software compatible with single-
power supply Flash
— Superior inadvertent write protection
— Backward-compatible with AMD Am29LV and
Am29F flash memories: powers up in
asynchronous mode for system boot, but can
immediately be placed into burst mode
■
Data# Polling and toggle bits
— Provides a software method of detecting program
or erase operation completion
■
Ready/Busy# pin (RY/BY#)
— Provides a hardware method of detecting
program or erase cycle completion
■
Erase Suspend/Erase Resume
— Suspends an erase operation to read data from,
or program data to, a sector that is not being
erased, then resumes the erase operation
■
Hardware reset pin (RESET#)
— Hardware method to reset the device for reading
array data
■
Tested to datasheet specifications at
temperature
■
Quality and reliability levels equivalent to
standard packaged components
相关PDF资料 |
PDF描述 |
|---|---|
| AM29BL162CB-9DGH1 | 16 Megabit (1 M x 16-Bit) CMOS 3.0 Volt-only, Burst-Mode, Boot Sector Flash Memory-Die Revision 1 |
| AM29BL162CB-9DGI1 | 16 Megabit (1 M x 16-Bit) CMOS 3.0 Volt-only, Burst-Mode, Boot Sector Flash Memory-Die Revision 1 |
| AM29BL162CB-9DPE1 | 16 Megabit (1 M x 16-Bit) CMOS 3.0 Volt-only, Burst-Mode, Boot Sector Flash Memory-Die Revision 1 |
| AM29BL162CB-9DPH1 | 16 Megabit (1 M x 16-Bit) CMOS 3.0 Volt-only, Burst-Mode, Boot Sector Flash Memory-Die Revision 1 |
| AM29BL162CB-9DPI1 | 16 Megabit (1 M x 16-Bit) CMOS 3.0 Volt-only, Burst-Mode, Boot Sector Flash Memory-Die Revision 1 |
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