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参数资料
| 型号： | AM29BL802CB80DTE1 |
| 厂商： | Spansion Inc. |
| 英文描述： | 8 Megabit (512 K x 16-Bit) CMOS 3.0 Volt-only, Burst-mode, Boot Sector Flash Memory-Die Revision 1 |
| 中文描述： | 8兆位（512亩× 16位），3.0伏的CMOS只，突发性，引导扇区闪存模式模修订1 |
| 文件页数： | 7/17页 |
| 文件大小： | 146K |
| 代理商： | AM29BL802CB80DTE1 |
6
Am29BL802C Known Good Die
S U P P L E M E N T
AC CHARACTERISTICS
Alternate CE# Controlled Erase/Program Operations
Notes:
1. Not 100% tested.
2. See the “Erase and Programming Performance” section for more information.
Parameter
Speed Options
JEDEC
Std
Description
80R
Unit
t
AVAV
t
WC
Write Cycle Time (Note 1)
Min
80
ns
t
AVEL
t
AS
Address Setup Time
Min
ns
t
ELAX
t
AH
Address Hold Time
Min
45
ns
t
DVEH
t
DS
Data Setup Time
Min
35
ns
t
EHDX
t
DH
Data Hold Time
Min
0
ns
t
OES
Output Enable Setup Time
Min
0
ns
t
GHEL
t
GHEL
Read Recovery Time Before Write
(OE# High to WE# Low)
Min
0
ns
t
WLEL
t
WS
WE# Setup Time
Min
0
ns
t
EHWH
t
WH
WE# Hold Time
Min
0
ns
t
ELEH
t
CP
CE# Pulse Width
Min
35
ns
t
EHEL
t
CPH
CE# Pulse Width High
Min
30
ns
t
WHWsH1
t
WHWH1
Programming Operation (Note 2)
Typ
9
μs
t
WHWH2
t
WHWH2
Sector Erase Operation (Note 2)
Typ
3
sec
相关PDF资料 |
PDF描述 |
|---|---|
| AM29BL802CB80DTH1 | 8 Megabit (512 K x 16-Bit) CMOS 3.0 Volt-only, Burst-mode, Boot Sector Flash Memory-Die Revision 1 |
| AM29BL802CB80DTI1 | 8 Megabit (512 K x 16-Bit) CMOS 3.0 Volt-only, Burst-mode, Boot Sector Flash Memory-Die Revision 1 |
| AM29BL802CB80DWE1 | 8 Megabit (512 K x 16-Bit) CMOS 3.0 Volt-only, Burst-mode, Boot Sector Flash Memory-Die Revision 1 |
| AM29BL802CB80DWH1 | 8 Megabit (512 K x 16-Bit) CMOS 3.0 Volt-only, Burst-mode, Boot Sector Flash Memory-Die Revision 1 |
| AM29BL802CB80DWI1 | 8 Megabit (512 K x 16-Bit) CMOS 3.0 Volt-only, Burst-mode, Boot Sector Flash Memory-Die Revision 1 |
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