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参数资料
| 型号： | AM29BL802CB80DTH1 |
| 厂商： | Spansion Inc. |
| 英文描述： | 8 Megabit (512 K x 16-Bit) CMOS 3.0 Volt-only, Burst-mode, Boot Sector Flash Memory-Die Revision 1 |
| 中文描述： | 8兆位（512亩× 16位），3.0伏的CMOS只，突发性，引导扇区闪存模式模修订1 |
| 文件页数： | 17/17页 |
| 文件大小： | 146K |
| 代理商： | AM29BL802CB80DTH1 |
16
Am29BL802C Known Good Die
S U P P L E M E N T
REVISION SUMMARY
Revision A (December 19, 2000)
Initial release.
Revision A+1 (June 27, 2001)
Manufacturing Information
Added Penang, Malaysia as a test facility (ACN2016).
Revision A+2 (September 13, 2002)
Changed title from Boot Sector to Burst Sector.
AC Characteristics
Added Read Options, Burst Mode Read, Erase/
Program Operations, and Alternate CE# Controlled
Erase/Program Operations Tables.
Trademarks
Copyright 2001 Advanced Micro Devices, Inc. All rights reserved.
AMD, the AMD logo, and combinations thereof are registered trademarks of Advanced Micro Devices, Inc.
Product names used in this publication are for identification purposes only and may be trademarks of their respective companies.
相关PDF资料 |
PDF描述 |
|---|---|
| AM29BL802CB80DTI1 | 8 Megabit (512 K x 16-Bit) CMOS 3.0 Volt-only, Burst-mode, Boot Sector Flash Memory-Die Revision 1 |
| AM29BL802CB80DWE1 | 8 Megabit (512 K x 16-Bit) CMOS 3.0 Volt-only, Burst-mode, Boot Sector Flash Memory-Die Revision 1 |
| AM29BL802CB80DWH1 | 8 Megabit (512 K x 16-Bit) CMOS 3.0 Volt-only, Burst-mode, Boot Sector Flash Memory-Die Revision 1 |
| AM29BL802CB80DWI1 | 8 Megabit (512 K x 16-Bit) CMOS 3.0 Volt-only, Burst-mode, Boot Sector Flash Memory-Die Revision 1 |
| AM29DL320GB70PCIN | For new designs involving TSOP packages, S29JL032H supercedes Am29DL320G and is the factory-recommended migration path. |
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