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参数资料
| 型号： | AM29DL162CB120EIN |
| 厂商： | ADVANCED MICRO DEVICES INC |
| 元件分类： | PROM |
| 英文描述： | 2M X 8 FLASH 3V PROM, 120 ns, PDSO48 |
| 封装： | TSOP-48 |
| 文件页数： | 41/51页 |
| 文件大小： | 737K |
| 代理商： | AM29DL162CB120EIN |
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46
Am29DL16xC
P R E L I M I NARY
ERASE AND PROGRAMMING PERFORMANCE
Notes:
1. Typical program and erase times assume the following conditions: 25
°C, 3.0 V V
CC, 1,000,000 cycles. Additionally,
programming typicals assume checkerboard pattern.
2. Under worst case conditions of 90
°C, V
CC = 2.7 V, 1,000,000 cycles.
3. The typical chip programming time is considerably less than the maximum chip programming time listed, since most bytes
program faster than the maximum program times listed.
4. In the pre-programming step of the Embedded Erase algorithm, all bytes are programmed to 00h before erasure.
5. System-level overhead is the time required to execute the two- or four-bus-cycle sequence for the program command. See Table
14 for further information on command definitions.
6. The device has a minimum erase and program cycle endurance of 1,000,000 cycles.
LATCHUP CHARACTERISTICS
Note: Includes all pins except V
CC. Test conditions: VCC = 3.0 V, one pin at a time.
TSOP AND SO PIN CAPACITANCE
Notes:
1. Sampled, not 100% tested.
2. Test conditions T
A = 25°C, f = 1.0 MHz.
DATA RETENTION
Parameter
Typ (Note 1)
Max (Note 2)
Unit
Comments
Sector Erase Time
0.7
15
sec
Excludes 00h programming
prior to erasure (Note 4)
Chip Erase Time
27
sec
Byte Program Time
9
300
s
Excludes system level
overhead (Note 5)
Word Program Time
11
360
s
Accelerated Byte/Word Program Time
7
210
s
Chip Program Time
Byte Mode
18
54
sec
Word Mode
12
36
Description
Min
Max
Input voltage with respect to V
SS on all pins except I/O pins
(including A9, OE#, and RESET#)
–1.0 V
12.5 V
Input voltage with respect to V
SS on all I/O pins
–1.0 V
V
CC + 1.0 V
V
CC Current
–100 mA
+100 mA
Parameter
Symbol
Parameter Description
Test Setup
Typ
Max
Unit
C
IN
Input Capacitance
V
IN = 0
6
7.5
pF
C
OUT
Output Capacitance
V
OUT = 0
8.5
12
pF
C
IN2
Control Pin Capacitance
V
IN = 0
7.5
9
pF
Parameter Description
Test Conditions
Min
Unit
Minimum Pattern Data Retention Time
150
°C
10
Years
125
°C
20
Years
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|---|---|
| AM29DL162CT120EIB | 2M X 8 FLASH 3V PROM, 120 ns, PDSO48 |
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