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参数资料
| 型号： | AM29DL320GB90WMIN |
| 厂商： | ADVANCED MICRO DEVICES INC |
| 元件分类： | PROM |
| 英文描述： | 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory |
| 中文描述： | 2M X 16 FLASH 3V PROM, 90 ns, PBGA48 |
| 封装： | 6 X 12 MM, 0.80 MM PITCH, FBGA-48 |
| 文件页数： | 15/55页 |
| 文件大小： | 1230K |
| 代理商： | AM29DL320GB90WMIN |
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22
Am29DL320G
July 31, 2002
ADV ANC E
INFO RMAT ION
Table 10.
System Interface String
Table 11.
Device Geometry Definition
Addresses
(Word Mode)
Addresses
(Byte Mode)
Data
Description
1Bh
36h
0027h
V
CC Min. (write/erase)
D7–D4: volt, D3–D0: 100 millivolt
1Ch
38h
0036h
V
CC Max. (write/erase)
D7–D4: volt, D3–D0: 100 millivolt
1Dh
3Ah
0000h
VPP Min. voltage (00h = no VPP pin present)
1Eh
3Ch
0000h
VPP Max. voltage (00h = no VPP pin present)
1Fh
3Eh
0004h
Typical timeout per single byte/word write 2
N s
20h
40h
0000h
Typical timeout for Min. size buffer write 2
N s (00h = not supported)
21h
42h
000Ah
Typical timeout per individual block erase 2
N ms
22h
44h
0000h
Typical timeout for full chip erase 2
N ms (00h = not supported)
23h
46h
0005h
Max. timeout for byte/word write 2
N times typical
24h
48h
0000h
Max. timeout for buffer write 2
N times typical
25h
4Ah
0004h
Max. timeout per individual block erase 2
N times typical
26h
4Ch
0000h
Max. timeout for full chip erase 2
N times typical (00h = not supported)
Addresses
(Word Mode)
Addresses
(Byte Mode)
Data
Description
27h
4Eh
0016h
Device Size = 2
N byte
28h
29h
50h
52h
0002h
0000h
Flash Device Interface description (refer to CFI publication 100)
2Ah
2Bh
54h
56h
0000h
Max. number of bytes in multi-byte write = 2
N
(00h = not supported)
2Ch
58h
0002h
Number of Erase Block Regions within device
2Dh
2Eh
2Fh
30h
5Ah
5Ch
5Eh
60h
0007h
0000h
0020h
0000h
Erase Block Region 1 Information
(refer to the CFI specification or CFI publication 100)
31h
32h
33h
34h
62h
64h
66h
68h
003Eh
0000h
0001h
Erase Block Region 2 Information
35h
36h
37h
38h
6Ah
6Ch
6Eh
70h
0000h
Erase Block Region 3 Information
39h
3Ah
3Bh
3Ch
72h
74h
76h
78h
0000h
Erase Block Region 4 Information
相关PDF资料 |
PDF描述 |
|---|---|
| AM29DL320GT120EI | 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory |
| AM29DL320GT120EIN | 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory |
| AM29DL320GT120WDI | 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory |
| AM29DL320GT120WDIN | 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory |
| AM29DL320GT120WMI | 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory |
相关代理商/技术参数 |
参数描述 |
|---|---|
| AM29DL322DB7REIT | 制造商:AMD 功能描述:New |
| AM29DL322DB-90WDIT | 制造商:Spansion 功能描述:FLASH PARALLEL 3V/3.3V 32MBIT 4MX8/2MX16 90NS 63FBGA - Tape and Reel |
| AM29DL322DT-90EI-T | 制造商:Advanced Micro Devices 功能描述: |
| AM29DL322GB-90EI | 制造商:Advanced Micro Devices 功能描述:2M X 16 FLASH 3V PROM, 90 ns, 48 Pin Plastic SMT |
| AM29DL322GT-90EI | 制造商:Advanced Micro Devices 功能描述:Flash Mem Parallel 3.3V 32M-Bit 4M x 8/2M x 16 90ns 48-Pin TSOP |
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