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参数资料
| 型号： | AM29DS163DB120WAFN |
| 厂商： | Advanced Micro Devices, Inc. |
| 英文描述： | 16 Megabit CMOS 1.8 Volt-only, Simultaneous Operation Flash Memory |
| 中文描述： | 16兆位的CMOS 1.8伏只，同时作业快闪记忆体 |
| 文件页数： | 33/50页 |
| 文件大小： | 1682K |
| 代理商： | AM29DS163DB120WAFN |
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Am29DS163D
33
A D V A N C E I N F O R M A T I O N
DC CHARACTERISTICS
CMOS Compatible
Notes:
1. The I
CC
current listed is typically less than 1 mA/MHz, with OE# at V
IH
.
2. Maximum I
CC
specifications are tested with V
CC
= V
CC
max.
3. I
CC
active while Embedded Erase or Embedded Program is in progress.
4. Automatic sleep mode enables the low power mode when addresses remain stable for t
ACC
+ 30 ns. Typical sleep mode current is
200 nA.
5. Not 100% tested.
Parameter
Symbol
Parameter Description
Test Conditions
Min
Typ
Max
Unit
I
LI
Input Load Current
V
IN
= V
SS
to V
CC
,
V
CC
= V
CC
max
±
1.0
μA
I
LIT
A9 Input Load Current
V
CC
= V
CC max
; A9 = 11 V
V
OUT
= V
SS
to V
CC
,
V
CC
= V
CC max
35
μA
I
LO
Output Leakage Current
±
1.0
μA
I
CC1
V
CC
Active Read Current
(Notes 1, 2)
CE# = V
IL,
OE#
=
V
IH
,
Byte Mode
5 MHz
5
16
mA
1 MHz
1
4
CE# = V
IL,
OE#
=
V
IH
,
Word Mode
5 MHz
5
16
1 MHz
1
4
I
CC2
V
CC
Active Write Current (Notes 2, 3) CE# = V
IL,
OE#
=
V
IH
, WE# = V
IL
10
15
mA
I
CC3
V
CC
Standby Current (Note 2)
CE#, RESET# = V
CC
±
0.3 V
RESET# = V
SS
±
0.3 V
V
IH
= V
CC
±
0.3 V;
V
IL
= V
SS
±
0.3 V
0.2
5
μA
I
CC4
V
CC
Reset Current (Note 2)
0.2
5
μA
I
CC5
Automatic Sleep Mode (Notes 2, 4)
0.2
5
μA
I
CC6
V
CC
Active Read-While-Program
Current (Notes 1, 2)
CE# = V
IL
,
OE# = V
IH
Byte
15
25
mA
Word
15
25
I
CC7
V
CC
Active Read-While-Erase
Current (Notes 1, 2)
CE# = V
IL
, OE# = V
IH
Byte
15
25
mA
Word
15
25
I
CC8
V
CC
Active
Program-While-Erase-Suspended
Current (Notes 2, 5)
CE# = V
IL
, OE# = V
IH
10
15
mA
I
ACC
ACC Accelerated Program Current,
Word or Byte
CE# = V
IL
, OE# = V
IH
ACC pin
5
10
mA
V
CC
pin
10
15
mA
V
IL
Input Low Voltage
–0.5
V
CC
x 0.2
V
V
IH
Input High Voltage
0.8 x V
CC
V
CC
+ 0.3
V
V
HH
Voltage for WP#/ACC Sector
Protect/Unprotect and Program
Acceleration
V
CC
= 1.8–2.2 V
8.5
9.5
V
V
ID
Voltage for Autoselect and Temporary
Sector Unprotect
V
CC
= 1.8–2.2 V
9.0
11.0
V
V
OL
Output Low Voltage
I
OL
= 2.0 mA, V
CC
= V
CC min
0.25
V
V
OH1
Output High Voltage
I
OH
= –2.0 mA, V
CC
= V
CC min
0.7 V
CC
V
V
OH2
I
OH
= –100 μA, V
CC
= V
CC min
V
CC
–0.1
V
LKO
Low V
CC
Lock-Out Voltage (Note 5)
1.2
1.6
V
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