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| 型号： | AM29DS322B70WMIN |
| 厂商： | Spansion Inc. |
| 英文描述： | 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation Flash Memory |
| 中文描述： | 32兆位（4个M × 8位/ 2米x 16位），1.8伏的CMOS只，同时作业快闪记忆体 |
| 文件页数： | 4/52页 |
| 文件大小： | 604K |
| 代理商： | AM29DS322B70WMIN |
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May 15, 2002
Am29DS32xG
3
A D V A N C E I N F O R M A T I O N
TABLE OF CONTENTS
Product Selector Guide . . . . . . . . . . . . . . . . . . . . . 4
Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Connection Diagrams . . . . . . . . . . . . . . . . . . . . . . . 5
Special Handling Instructions for FBGA Package ..........................6
Pin Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Logic Symbol . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Ordering Information . . . . . . . . . . . . . . . . . . . . . . . 8
Device Bus Operations . . . . . . . . . . . . . . . . . . . . . 10
Table 1. Device Bus Operations ...........................................................10
Word/Byte Configuration ..............................................................10
Requirements for Reading Array Data .........................................10
Writing Commands/Command Sequences ..................................11
Accelerated ProgramOperation ...................................................11
Autoselect Functions ....................................................................11
Simultaneous Read/Write Operations
with ZeroLatency .........................................................................11
Standby Mode ..............................................................................11
Automatic Sleep Mode .................................................................11
RESET# Hardware Reset Pin .....................................................12
Output Disable Mode ...................................................................12
Table 2. Device Bank Divisions .............................................................12
Table 3. Top Boot Sector Addresses ...................................................13
Table 4. Top Boot SecSi
TM
Sector Addresses..................................... 14
Table 5. BottomBoot Sector Addresses ...............................................16
Table 6. BottomBoot SecSi
TM
Sector Addresses................................ 17
Autoselect Mode ..........................................................................18
Table 7. Autoselect Codes, (High Voltage Method) .............................18
Sector/Sector Block Protection and Unprotection ........................19
Table 8. Top Boot Sector/Sector Block Addresses
forProtection/Unprotection ...................................................................19
Table 9. BottomBoot Sector/Sector Block Addresses
forProtection/Unprotection ...................................................................19
Write Protect (WP#) .....................................................................20
Temporary Sector Unprotect ........................................................20
Figure 1. Temporary Sector Unprotect Operation................................. 20
Figure 2. In-SystemSector Protection/
Sector Unprotection Algorithms............................................................ 21
SecSi
TM
(Secured Silicon) Sector
Flash MemoryRegion ..................................................................22
Factory Locked: SecSi Sector Programmed and Protected At the
Factory .........................................................................................22
Customer Lockable: SecSi Sector NOT Programmed or Protected At
the Factory ...................................................................................22
Hardware Data Protection ............................................................22
Low VCC Write Inhibit ..................................................................23
Write Pulse “Glitch” Protection .....................................................23
Logical Inhibit ...............................................................................23
Power-Up Write Inhibit .................................................................23
Common Flash Memory Interface (CFI) . . . . . . . 23
Table 10. CFI Query Identification String.............................................. 23
Table 11. SystemInterface String......................................................... 24
Table 12. Device Geometry Definition.................................................. 24
Table 13. Primary Vendor-Specific Extended Query............................ 25
Command Definitions . . . . . . . . . . . . . . . . . . . . . . 25
Reading Array Data ......................................................................25
Reset Command ..........................................................................26
Autoselect Command Sequence ..................................................26
Enter SecSi
TM
Sector/Exit SecSi Sector
Command Sequence ...................................................................26
Byte/Word ProgramCommand Sequence ...................................26
Unlock Bypass Command Sequence ...........................................27
Figure 3. ProgramOperation................................................................ 27
Chip Erase Command Sequence .................................................27
Sector Erase Command Sequence ..............................................28
Erase Suspend/Erase Resume Commands ................................28
Figure 4. Erase Operation.................................................................... 29
Table 14. Command Definitions........................................................... 30
Write Operation Status . . . . . . . . . . . . . . . . . . . . 31
DQ7: Data#Polling ......................................................................31
Figure 5. Data#Polling Algorithm......................................................... 31
RY/BY# Ready/Busy#.................................................................32
DQ6: Toggle Bit I ..........................................................................32
Figure 6. Toggle Bit Algorithm.............................................................. 32
DQ2: Toggle Bit II .........................................................................33
Reading Toggle Bits DQ6/DQ2 ....................................................33
DQ5: Exceeded Timng Limts ......................................................33
DQ3: Sector Erase Timer .............................................................33
Table 15. Write Operation Status .........................................................34
Absolute Maximum Ratings . . . . . . . . . . . . . . . . 35
Figure 7. MaximumNegative OvershootWaveform............................. 35
Figure 8. MaximumPositive OvershootWaveform.............................. 35
DC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . 36
Figure 9. I
CC1
Current vs. Time (Showing Active and
AutomaticSleepCurrents).................................................................... 37
Figure 10. Typical I
vs. Frequency................................................... 37
Test Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . 38
Figure 11. Test Setup.......................................................................... 38
Figure 12. Input Waveforms and Measurement Levels........................ 38
AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . 39
Figure 13. Read Operation Timngs...................................................... 39
Figure 14. Reset Timngs...................................................................... 40
Word/Byte Configuration (BYTE#) ...............................................41
Figure 15. BYTE# Timngs for Read Operations.................................. 41
Figure 16. BYTE# Timngs for Write Operations.................................. 41
Erase and ProgramOperations ...................................................42
Figure 17. ProgramOperation Timngs................................................ 43
Figure 18. Accelerated ProgramTimng Diagram................................ 43
Figure 19. Chip/Sector Erase Operation Timngs................................. 44
Figure 20. Back-to-back Read/Write Cycle Timngs............................. 45
Figure 21. Data# Polling Timngs (During EmbeddedAlgorithms)....... 45
Figure 22. Toggle Bit Timngs (During EmbeddedAlgorithms)............ 46
Figure 23. DQ2 vs. DQ6....................................................................... 46
Temporary Sector Unprotect ........................................................47
Figure 24. Temporary Sector Unprotect Timng Diagram..................... 47
Figure 25. Sector/Sector Block Protect and Unprotect TimngDiagram48
Alternate CE#Controlled Erase and ProgramOperations ...........49
Figure 26. Alternate CE#Controlled Write (Erase/Program)
OperationTimngs................................................................................ 50
Erase And Programming Performance . . . . . . . 51
Latchup Characteristics. . . . . . . . . . . . . . . . . . . . 51
TSOP And SO Pin Capacitance. . . . . . . . . . . . . . 51
Data Retention. . . . . . . . . . . . . . . . . . . . . . . . . . . . 51
.....................................................................................................51
Physical Dimensions . . . . . . . . . . . . . . . . . . . . . . 52
FBD048—Fine-Pitch Ball Grid Array, 6 x 12 mm.........................52
TS 048—Thin Small Outline Package ..........................................53
Revision Summary . . . . . . . . . . . . . . . . . . . . . . . . 54
Revision A (May 15, 2002) ...........................................................54
相关PDF资料 |
PDF描述 |
|---|---|
| AM29DS322B90EEN | 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation Flash Memory |
| AM29DS322B90EI | 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation Flash Memory |
| AM29DS322B90EIN | 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation Flash Memory |
| AM29DS322B90WMI | 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation Flash Memory |
| AM29DS322B90WMIN | 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation Flash Memory |
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