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参数资料
| 型号： | AM29F010B |
| 厂商： | Spansion Inc. |
| 英文描述： | 1 Megabit (128 K x 8-bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory |
| 中文描述： | 1兆位（128亩× 8位）的CMOS 5.0伏只，统一部门快闪记忆体 |
| 文件页数： | 3/35页 |
| 文件大小： | 849K |
| 代理商： | AM29F010B |
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Am29F010B
November 18, 2002
GENERAL DESCRIPTION
The Am29F010B is a 1 Mbit, 5.0 Volt-only Flash
memory organized as 131,072 bytes. The Am29F010B
is offered in 32-pin PDIP, PLCC and TSOP packages.
The byte-wide data appears on DQ0-DQ7. The de-
vice is designed to be programmed in-system with the
standard system 5.0 Volt V
CC
supply. A 12.0 volt V
PP
is not
required for program or erase operations. The device can
also be programmed or erased in standard EPROM
programmers.
This device is manufactured using AMD’s 0.32 μm pro-
cess technology, and offers all the features and benefits
of the Am29F010 and Am29F010A.
The standard device offers access times of 45, 55, 70,
90, and 120 ns, allowing high-speed microprocessors
to operate without wait states. To eliminate bus conten-
tion the device has separate chip enable (CE#), write
enable (WE#) and output enable (OE#) controls.
The device requires only a
single 5.0 volt power sup-
ply
for both read and write functions. Internally
generated and regulated voltages are provided for the
program and erase operations.
The device is entirely command set compatible with the
JEDEC single-power-supply Flash standard
. Com-
mands are written to the command register using
standard microprocessor write timings. Register con-
tents serve as input to an internal state machine that
controls the erase and programming circuitry. Write
cycles also internally latch addresses and data needed
for the programming and erase operations. Reading
data out of the device is similar to reading from other
Flash or EPROM devices.
Device programming occurs by executing the program
command sequence. This invokes the
Embedded
Program
algorithm—an internal algorithm that auto-
matically times the program pulse widths and verifies
proper cell margin.
Device erasure occurs by executing the erase com-
mand sequence. This invokes the
Embedded Erase
algorithm—an internal algorithm that automatically pre-
programs the array (if it is not already programmed)
before executing the erase operation. During erase,
the device automatically times the erase pulse widths
and verifies proper cell margin.
The host system can detect whether a program or
erase operation is complete by reading the DQ7 (Data#
Polling) and DQ6 (toggle)
status bits
. After a program
or erase cycle has been completed, the device is ready
to read array data or accept another command.
The
sector erase architecture
allows memory sectors
to be erased and reprogrammed without affecting the
data contents of other sectors. The device is erased
when shipped from the factory.
The
hardware data protection
measures include a
low V
CC
detector automatically inhibits write operations
during power transitions. The
hardware sector protec-
tion
feature disables both program and erase
operations in any combination of the sectors of memory,
and is implemented using standard EPROM
programmers.
The system can place the device into the
standby mode
.
Power consumption is greatly reduced in this mode.
AMD’s Flash technology combines years of Flash
memory manufacturing experience to produce the
highest levels of quality, reliability, and cost
effectiveness. The device electrically erases all bits
within a sector simultaneously via Fowler-Nordheim
tunneling. The bytes are programmed one byte at a
time using the EPROM programming mechanism of
hot electron injection.
相关PDF资料 |
PDF描述 |
|---|---|
| AM29F010B70JI | LCD Character display; No. of Digits/Alpha:32; Display Technology:LCD; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes RoHS Compliant: Yes |
| AM29F010B70PC | LM3211 Step-up PWM DC/DC Converter Integrated with 4 Buffers; Package: TSSOP; No of Pins: 20; Qty per Container: 2500; Container: Reel |
| AM29F010B70PE | 1 Megabit (128 K x 8-bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory |
| AM29F010B70PI | 1 Megabit (128 K x 8-bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory |
| AM29F010B70EC | LCD Module; Leaded Process Compatible:Yes RoHS Compliant: Yes |
相关代理商/技术参数 |
参数描述 |
|---|---|
| AM29F010B-120EC | 制造商:Advanced Micro Devices 功能描述:NOR Flash, 128K x 8, 32 Pin, Plastic, TSSOP |
| AM29F010B-120JC | 制造商:Advanced Micro Devices 功能描述: 制造商:Advanced Micro Devices 功能描述:NOR Flash, 128K x 8, 32 Pin, Plastic, PLCC |
| AM29F010B-120JD | 制造商:Spansion 功能描述:IC SM FLASH 5V 1MB |
| AM29F010B-120JD | 制造商:Spansion 功能描述:FLASH MEMORY IC |
| AM29F010B-120JF | 制造商:Spansion 功能描述: 制造商:Spansion 功能描述:IC SM FLASH 5V 1MB |
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