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参数资料
| 型号： | AM29F040B-150JIB |
| 厂商： | ADVANCED MICRO DEVICES INC |
| 元件分类： | PROM |
| 英文描述： | 4 Megabit (512 K x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory |
| 中文描述： | 512K X 8 FLASH 5V PROM, 150 ns, PQCC32 |
| 封装： | PLASTIC, LCC-32 |
| 文件页数： | 7/30页 |
| 文件大小： | 417K |
| 代理商： | AM29F040B-150JIB |
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Am29F040B
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The DQ5 failure condition may appear if the system
tries to program a “1” to a location that is previously pro-
grammed to “0.” Only an erase operation can change
a “0” back to a “1.” Under this condition, the device
halts the operation, and when the operation has ex-
ceeded the timing limits, DQ5 produces a “1.”
Under both these conditions, the system must issue the
reset command to return the device to reading array
data.
DQ3: Sector Erase Timer
After writing a sector erase command sequence, the
system may read DQ3 to determine whether or not an
erase operation has begun. (The sector erase timer
does not apply to the chip erase command.) If addi-
tional sectors are selected for erasure, the entire time-
out also applies after each additional sector erase com-
mand. When the time-out is complete, DQ3 switches
from “0” to “1.” The system may ignore DQ3 if the sys-
tem can guarantee that the time between additional
sector erase commands will always be less than 50 s.
See also the “Sector Erase Command Sequence”
section.
After the sector erase command sequence is written,
the system should read the status on DQ7 (Data# Poll-
ing) or DQ6 (Toggle Bit I) to ensure the device has
accepted the command sequence, and then read DQ3.
If DQ3 is “1”, the internally controlled erase cycle has
begun; all further commands (other than Erase Sus-
pend) are ignored until the erase operation is complete.
If DQ3 is “0”, the device will accept additional sector
erase commands. To ensure the command has been
accepted, the system software should check the status
of DQ3 prior to and following each subsequent sector
erase command. If DQ3 is high on the second status
check, the last command might not have been ac-
cepted. Table 5 shows the outputs for DQ3.
START
No
Yes
DQ5 = 1?
No
Yes
Toggle Bit
= Toggle?
No
Program/Erase
Operation Not
Complete, Write
Reset Command
Program/Erase
Operation Complete
Read DQ7–DQ0
Toggle Bit
= Toggle?
Read DQ7–DQ0
Twice
Read DQ7–DQ0
Notes:
1. Read toggle bit twice to determine whether or not it is
toggling. See text.
2. Recheck toggle bit because it may stop toggling as DQ5
changes to “1”. See text.
21445C-9
Figure 4.
Toggle Bit Algorithm
(Notes
相关PDF资料 |
PDF描述 |
|---|---|
| AM29F040B-150PCB | 4 Megabit (512 K x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory |
| AM29F040B-150PEB | 4 Megabit (512 K x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory |
| AM29F040B-70EEB | 4 Megabit (512 K x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory |
| AM29F040B-70FCB | 4 Megabit (512 K x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory |
| AM29F040B-70FEB | 4 Megabit (512 K x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory |
相关代理商/技术参数 |
参数描述 |
|---|---|
| AM29F040B-55EC | 制造商:Advanced Micro Devices 功能描述:NOR Flash, 512K x 8, 32 Pin, Plastic, TSSOP |
| AM29F040B-55ED | 制造商:Spansion 功能描述:IC FLASH 4MB SMD 29F040 TSOP32 |
| AM29F040B-55EE | 制造商:Spansion 功能描述:NOR Flash Parallel 5V 4Mbit 512K x 8bit 55ns 32-Pin TSOP |
| AM29F040B-55EF | 功能描述:闪存 4M (512Kx8) 55ns 5v Parallel NOR 闪存 RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| AM29F040B-55EI | 制造商:Spansion 功能描述:NOR Flash Parallel 5V 4Mbit 512K x 8bit 55ns 32-Pin TSOP |
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