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参数资料
| 型号： | AM29F040B-70EEB |
| 厂商： | ADVANCED MICRO DEVICES INC |
| 元件分类： | PROM |
| 英文描述： | 4 Megabit (512 K x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory |
| 中文描述： | 512K X 8 FLASH 5V PROM, 70 ns, PDSO32 |
| 封装： | TSOP-32 |
| 文件页数： | 24/30页 |
| 文件大小： | 417K |
| 代理商： | AM29F040B-70EEB |
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Am29F040B
REVISION SUMMARY
Revision B (January 1998)
Global
Formatted for consistency with other 5.0 volt-only data
data sheets.
Revision B+1 (January 1998)
AC Characteristics, Erase and Program Operations
Added Note references to tWHWH1. Corrected the pa-
rameter symbol for VCC Set-up Time to tVCS; the
specification is 50 s minimum. Deleted the last row in
table.
Revision B+2 (April 1998)
Distinctive Characteristics
Changed minimum 100K write/erase cycles guaran-
teed to 1,000,000.
Ordering Infomation
Added extended temperature availability to the -55 and
-70 speed options.
AC Characteristics
Erase/Program Operations; Erase and Program Oper-
ations Alternate CE# Controlled Writes: Corrected the
no t e s refe renc e fo r t WH WH 1 a nd t WH W H 2 .
These parameters are 100% tested. Corrected the note
reference for tVCS. This parameter is not 100% tested.
Erase and Programming Performance
Changed minimum 100K program and erase cycles
guaranteed to 1,000,000.
Revision C (January 1999)
Global
Updated for CS39S process technology.
Distinctive Characteristics
Added 20-year data retention bullet.
DC Characterisitics—TTL/NMOS Compatible
VOH: Changed the parameter description to “Output
High Voltage” from Output High Level”.
DC Characteristics—TTL/NMOS Compatible and
CMOS Compatible
ICC1, ICC2, ICC3: Added Note 2 “Maximum ICC specifi-
cations are tested with VCC = VCCmax”.
ICC3: Deleted VCC = VCCMax.
Revision C+1 (February 1999)
Command Definitions
Command Definitions table: Deleted “XX” from the
fourth cycle data column of the Sector Protect Verify
command.
Revision C+2 (May 17, 1999)
Test Specifications Table
Corrected the input and output measurement entries in
the “All others” column.
Trademarks
Copyright 1999 Advanced Micro Devices, Inc. All rights reserved.
AMD, the AMD logo, and combinations thereof are registered trademarks of Advanced Micro Devices, Inc.
ExpressFlash is a trademark of Advanced Micro Devices, Inc.
Product names used in this publication are for identification purposes only and may be trademarks of their respective companies.
相关PDF资料 |
PDF描述 |
|---|---|
| AM29F040B-70FCB | 4 Megabit (512 K x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory |
| AM29F040B-70FEB | 4 Megabit (512 K x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory |
| AM29F040B-70FIB | 4 Megabit (512 K x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory |
| AM29F040B-70JCB | 4 Megabit (512 K x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory |
| AM29F040B-70JEB | 4 Megabit (512 K x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory |
相关代理商/技术参数 |
参数描述 |
|---|---|
| AM29F040B-70EF | 功能描述:闪存 4M (512Kx8) 70ns 5v Parallel NOR 闪存 RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| AM29F040B-70EF\\T | 制造商:Spansion 功能描述:IC 5V 4M BIT FLASH SECTORED CS39 |
| AM29F040B-70EF\T | 功能描述:闪存 IC 5V 4M BIT FLASH SECTORED CS39 RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| AM29F040B-70JC | 制造商:Advanced Micro Devices 功能描述:NOR Flash, 512K x 8, 32 Pin, Plastic, PLCC |
| AM29F040B-70JD | 制造商:Spansion 功能描述:IC SM FLASH 5V 4MB |
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