- 您现在的位置：买卖IC网 > PDF目录366430 > AM29F160DT75EC (ADVANCED MICRO DEVICES INC) Triple 3-Input Positive-AND Gates 14-TSSOP -40 to 85 PDF资料下载
参数资料
| 型号： | AM29F160DT75EC |
| 厂商： | ADVANCED MICRO DEVICES INC |
| 元件分类： | PROM |
| 英文描述： | Triple 3-Input Positive-AND Gates 14-TSSOP -40 to 85 |
| 中文描述： | 1M X 16 FLASH 5V PROM, 70 ns, PDSO48 |
| 封装： | MO-142DD, TSOP-48 |
| 文件页数： | 10/46页 |
| 文件大小： | 914K |
| 代理商： | AM29F160DT75EC |
第1页第2页第3页第4页第5页第6页第7页第8页第9页当前第10页第11页第12页第13页第14页第15页第16页第17页第18页第19页第20页第21页第22页第23页第24页第25页第26页第27页第28页第29页第30页第31页第32页第33页第34页第35页第36页第37页第38页第39页第40页第41页第42页第43页第44页第45页第46页
Am29F160D
9
tions and to the Read Operations Timings diagram for
the timing waveforms. I
CC1
in the DC Characteristics
table represents the active current specification for
reading array data.
Writing Commands/Command Sequences
To write a command or command sequence (which in-
cludes programming data to the device and erasing
sectors of memory), the system must drive WE# and
CE# to V
IL
, and OE# to V
IH
.
An erase operation can erase one sector, multiple sec-
tors, or the entire device. The Sector Address Tables in-
dicate the address space that each sector occupies. A
“sector address” consists of the address bits required
to uniquely select a sector. See the “Command Defini-
tions” section for details on erasing a sector or the en-
tire chip, or suspending/resuming the erase operation.
After the system writes the autoselect command se-
quence, the device enters the autoselect mode. The
system can then read autoselect codes from the inter-
nal register (which is separate from the memory array)
on DQ7–DQ0. Standard read cycle timings apply in this
mode. Refer to the “Autoselect Mode” and “Autoselect
Command Sequence” sections for more information.
I
CC2
in the DC Characteristics table represents the ac-
tive current specification for the write mode. The “AC
Characteristics” section contains timing specification
tables and timing diagrams for write operations.
Program and Erase Operation Status
During an erase or program operation, the system may
check the status of the operation by reading the status
bits on DQ7–DQ0. Standard read cycle timings and I
CC
read specifications apply. Refer to “Write Operation
Status” for more information, and to each AC Charac-
teristics section for timing diagrams.
Standby Mode
When the system is not reading or writing to the device,
it can place the device in the standby mode. In this
mode, current consumption is greatly reduced, and the
outputs are placed in the high impedance state, inde-
pendent of the OE# input.
The device enters the CMOS standby mode when the
CE# and RESET# are held at V
CC
±
0.5 V. (Note that
this is a more restricted voltage range than V
IH
.) WP#
must also either be held at V
CC
±
0.5 V or left floating.
The device enters the TTL standby mode when CE#
and RESET# pins are both held at V
IH
. The device re-
quires standard access time (t
CE
) for read access when
the device is in either of these standby modes, before it
is ready to read data.
The device also enters the standby mode when the RE-
SET# pin is driven low. Refer to the next section, “RE-
SET#: Hardware Reset Pin”.
If the device is deselected during erasure or program-
ming, the device draws active current until the
operation is completed.
In the DC Characteristics tables, I
CC3
represents the
standby current specification.
Automatic Sleep Mode
The automatic sleep mode minimizes flash device
energy consumption. The device automatically enables
this mode when addresses remain stable for t
ACC
+ 30
ns. The automatic sleep mode is independent of the
CE#, WE#, and OE# control signals. Standard address
access timings provide new data when addresses are
changed. While in sleep mode, output data is latched
and always available to the system.
RESET#: Hardware Reset Pin
The RESET# pin provides a hardware method of reset-
ting the device to reading array data. When the system
drives the RESET# pin low for at least a period of t
RP
,
the device
immediately terminates
any operation in
progress, tristates all data output pins, and ignores all
read/write attempts for the duration of the RESET#
pulse. The device also resets the internal state ma-
chine to reading array data. The operation that was in-
terrupted should be reinitiated once the device is ready
to accept another command sequence, to ensure data
integrity. Current is reduced for the duration of the RE-
SET# pulse.
The RESET# pin may be tied to the system reset cir-
cuitry. A system reset would thus also reset the Flash
memory, enabling the system to read the boot-up firm-
ware from the Flash memory.
If RESET# is asserted during a program or erase oper-
ation, the RY/BY# pin remains a “0” (busy) until the in-
ternal reset operation is complete, which requires a
time of t
READY
(during Embedded Algorithms). The
system can thus monitor RY/BY# to determine whether
the reset operation is complete. If RESET# is asserted
when a program or erase operation is not executing
(RY/BY# pin is “1”), the reset operation is completed
within a time of t
READY
(not during Embedded Algo-
rithms). The system can read data t
RH
after the RE-
SET# pin returns to V
IH
.
Refer to the AC Characteristics tables for RESET# pa-
rameters and timing diagram.
Output Disable Mode
When the OE# input is at V
IH
, output from the device is
disabled. The output pins are placed in the high imped-
ance state.
相关PDF资料 |
PDF描述 |
|---|---|
| AM29F160DT75EI | Triple 3-Input Positive-AND Gates 14-TSSOP -40 to 85 |
| AM29F160DT75FC | Triple 3-Input Positive-AND Gates 14-TSSOP -40 to 85 |
| AM29F160DT75FI | Triple 3-Input Positive-AND Gates 14-TSSOP -40 to 85 |
| AM29F200AB-120FI | 2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory |
| Am29F200AB-55SEB | 2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory |
相关代理商/技术参数 |
参数描述 |
|---|---|
| AM29F160DT-75EF | 功能描述:闪存 16Mb 75ns 5V Parallel NOR 闪存 RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| AM29F160DT-90EE | 制造商:Spansion 功能描述:16M (2MX8/1MX16) 5V, BOOT BLOCK, TOP, TSOP48, EXT - Trays |
| AM29F160DT-90EF | 功能描述:闪存 16Mb 90ns 5V Parallel NOR 闪存 RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| AM29F160DT-90EI | 功能描述:闪存 IC 16MX16, 3V 100K FLSH, BOTTM RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| AM29F200AB-120DPE1 | 制造商:Spansion 功能描述:5V 2M FLASH KNOWN GOOD DIE W/ BOTTOM BOOT (EXTENDED TEMP) - Gel-pak, waffle pack, wafer, diced wafer on film |
发布紧急采购，3分钟左右您将得到回复。