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参数资料
| 型号： | Am29F200AB-70SEB |
| 厂商： | Advanced Micro Devices, Inc. |
| 英文描述： | 2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory |
| 中文描述： | 2兆位（256亩x 8-Bit/128亩x 16位），5.0伏的CMOS只，引导扇区闪存 |
| 文件页数： | 12/39页 |
| 文件大小： | 237K |
| 代理商： | AM29F200AB-70SEB |
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12
Am29F200A
P R E L I M I N A R Y
gramming, which might otherwise be caused by spuri-
ous system level signals during V
CC
power-up and
power-down transitions, or from system noise.
Low V
CC
Write Inhibit
When V
CC
is less than V
LKO
, the device does not ac-
cept any write cycles. This protects data during V
CC
power-up and power-down. The command register and
all internal program/erase circuits are disabled, and the
device resets. Subsequent writes are ignored until V
CC
is greater than V
LKO
. The system must provide the
proper signals to the control pins to prevent uninten-
tional writes when V
CC
is greater than V
LKO
.
Write Pulse “Glitch” Protection
Noise pulses of less than 5 ns (typical) on OE#, CE# or
WE# do not initiate a write cycle.
Logical Inhibit
Write cycles are inhibited by holding any one of OE#
= V
IL
, CE# = V
IH
or WE# = V
IH
. To initiate a write cy-
cle, CE# and WE# must be a logical zero while OE#
is a logical one.
Power-Up Write Inhibit
If WE# = CE# = V
IL
and OE# = V
IH
during power
up, the device does not accept commands on the
rising edge of WE#. The internal state machine is
automatically reset to reading array data on
power-up.
COMMAND DEFINITIONS
Writing specific address and data commands or se-
quences into the command register initiates device op-
erations. The Command Definitions table defines the
valid register command sequences. Writing
incorrect
address and data values
or writing them in the
im-
proper sequence
resets the device to reading array
data.
All addresses are latched on the falling edge of WE# or
CE#, whichever happens later. All data is latched on
the rising edge of WE# or CE#, whichever happens
first. Refer to the appropriate timing diagrams in the
“AC Characteristics” section.
Reading Array Data
The device is automatically set to reading array data
after device power-up. No commands are required to
retrieve data. The device is also ready to read array
data after completing an Embedded Program or Em-
bedded Erase algorithm.
After the device accepts an Erase Suspend command,
the device enters the Erase Suspend mode. The sys-
tem can read array data using the standard read tim-
ings, except that if it reads at an address within erase-
suspended sectors, the device outputs status data.
After completing a programming operation in the Erase
Suspend mode, the system may once again read array
data with the same exception. See “Erase Suspend/
Erase Resume Commands” for more information on
this mode.
The system
must
issue the reset command to re-en-
able the device for reading array data if DQ5 goes high,
or while in the autoselect mode. See the “Reset Com-
mand” section, next.
See also “Requirements for Reading Array Data” in the
“Device Bus Operations” section for more information.
The Read Operations table provides the read parame-
ters, and Read Operation Timings diagram shows the
timing diagram.
Reset Command
Writing the reset command to the device resets the de-
vice to reading array data. Address bits are don’t care
for this command.
The reset command may be written between the se-
quence cycles in an erase command sequence before
erasing begins. This resets the device to reading array
data. Once erasure begins, however, the device ig-
nores reset commands until the operation is complete.
The reset command may be written between the se-
quence cycles in a program command sequence be-
fore programming begins. This resets the device to
reading array data (also applies to programming in
Erase Suspend mode). Once programming begins,
however, the device ignores reset commands until the
operation is complete.
The reset command may be written between the se-
quence cycles in an autoselect command sequence.
Once in the autoselect mode, the reset command
must
be written to return to reading array data (also applies
to autoselect during Erase Suspend).
If DQ5 goes high during a program or erase operation,
writing the reset command returns the device to read-
ing array data (also applies during Erase Suspend).
Autoselect Command Sequence
The autoselect command sequence allows the host
system to access the manufacturer and devices codes,
and determine whether or not a sector is protected.
The Command Definitions table shows the address
and data requirements. This method is an alternative to
that shown in the Autoselect Codes (High Voltage
相关PDF资料 |
PDF描述 |
|---|---|
| AM29F200AB-70SI | 2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory |
| Am29F200AB-70SIB | 2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory |
| AM29F200AB-90EC | 2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory |
| Am29F200AB-90ECB | 2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory |
| AM29F200AB-90EE | 2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory |
相关代理商/技术参数 |
参数描述 |
|---|---|
| AM29F200AB-90SC | 制造商:Advanced Micro Devices 功能描述:NOR Flash, 128K x 16, 44 Pin, Plastic, SOP |
| AM29F200AB90SI | 制造商:AMD 功能描述:NEW |
| AM29F200AT-120EC | 制造商:Advanced Micro Devices 功能描述:NOR Flash Parallel 5V 2Mbit 256K/128K x 8bit/16bit 120ns 48-Pin TSOP |
| AM29F200AT55EC | 制造商:Advanced Micro Devices 功能描述: |
| AM29F200AT70SI | 制造商:AMD 功能描述:* |
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