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参数资料
| 型号： | AM29F200AB-90FI |
| 厂商： | ADVANCED MICRO DEVICES INC |
| 元件分类： | PROM |
| 英文描述： | 2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory |
| 中文描述： | 128K X 16 FLASH 5V PROM, 90 ns, PDSO48 |
| 封装： | REVERSE, TSOP-48 |
| 文件页数： | 14/39页 |
| 文件大小： | 237K |
| 代理商： | AM29F200AB-90FI |
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14
Am29F200A
P R E L I M I N A R Y
The system can determine the status of the erase
operation by using DQ7, DQ6, DQ2, or RY/BY#.
See “Write Operation Status” for information on
these status bits. When the Embedded Erase algo-
rithm is complete, the device returns to reading
array data and addresses are no longer latched.
Figure 3 illustrates the algorithm for the erase opera-
tion. See the Erase/Program Operations tables in “AC
Characteristics” for parameters, and to the Chip/Sector
Erase Operation Timings for timing waveforms.
Sector Erase Command Sequence
Sector erase is a six bus cycle operation. The sector
erase command sequence is initiated by writing two
unlock cycles, followed by a set-up command. Two ad-
ditional unlock write cycles are then followed by the ad-
dress of the sector to be erased, and the sector erase
command. The Command Definitions table shows the
address and data requirements for the sector erase
command sequence.
The device does
not
require the system to preprogram
the memory prior to erase. The Embedded Erase algo-
rithm automatically programs and verifies the sector for
an all zero data pattern prior to electrical erase. The
system is not required to provide any controls or tim-
ings during these operations.
After the command sequence is written, a sector erase
time-out of 50
μ
s begins. During the time-out period,
additional sector addresses and sector erase com-
mands may be written. Loading the sector erase buffer
may be done in any sequence, and the number of sec-
tors may be from one sector to all sectors. The time be-
tween these additional cycles must be less than 50
μ
s,
otherwise the last address and command might not be
accepted, and erasure may begin. It is recommended
that processor interrupts be disabled during this time to
ensure all commands are accepted. The interrupts can
be re-enabled after the last Sector Erase command is
written. If the time between additional sector erase
commands can be assumed to be less than 50
μ
s, the
system need not monitor DQ3.
Any command other
than Sector Erase or Erase Suspend during the
time-out period resets the device to reading array
data.
The system must rewrite the command sequence
and any additional sector addresses and commands.
The system can monitor DQ3 to determine if the sector
erase timer has timed out. (See the “DQ3: Sector Erase
Timer” section.) The time-out begins from the rising
edge of the final WE# pulse in the command sequence.
Once the sector erase operation has begun, only the
Erase Suspend command is valid. All other commands
are ignored. Note that a
hardware reset
during the
sector erase operation immediately terminates the op-
eration. The Sector Erase command sequence should
be reinitiated once the device has returned to reading
array data, to ensure data integrity.
When the Embedded Erase algorithm is complete, the
device returns to reading array data and addresses are
no longer latched. The system can determine the sta-
tus of the erase operation by using DQ7, DQ6, DQ2, or
RY/BY#. Refer to “Write Operation Status” for informa-
tion on these status bits.
Figure 3 illustrates the algorithm for the erase opera-
tion. Refer to the Erase/Program Operations tables in
the “AC Characteristics” section for parameters, and to
the Sector Erase Operations Timing diagram for timing
waveforms.
Erase Suspend/Erase Resume Commands
The Erase Suspend command allows the system to in-
terrupt a sector erase operation and then read data
from, or program data to, any sector not selected for
erasure. This command is valid only during the sector
erase operation, including the 50
μ
s time-out period
during the sector erase command sequence. The
Erase Suspend command is ignored if written during
the chip erase operation or Embedded Program algo-
rithm. Writing the Erase Suspend command during the
Sector Erase time-out immediately terminates the
time-out period and suspends the erase operation. Ad-
dresses are “don’t-cares” when writing the Erase Sus-
pend command.
When the Erase Suspend command is written during a
sector erase operation, the device requires a maximum
of 20
μ
s to suspend the erase operation. However,
when the Erase Suspend command is written during
the sector erase time-out, the device immediately ter-
minates the time-out period and suspends the erase
operation.
After the erase operation has been suspended, the
system can read array data from or program data to
any sector not selected for erasure. (The device “erase
suspends” all sectors selected for erasure.) Normal
read and write timings and command definitions apply.
Reading at any address within erase-suspended sec-
tors produces status data on DQ7–DQ0. The system
can use DQ7, or DQ6 and DQ2 together, to determine
if a sector is actively erasing or is erase-suspended.
See “Write Operation Status” for information on these
status bits.
After an erase-suspended program operation is com-
plete, the system can once again read array data within
non-suspended sectors. The system can determine the
status of the program operation using the DQ7 or DQ6
status bits, just as in the standard program operation.
See “Write Operation Status” for more information.
The system may also write the autoselect command
sequence when the device is in the Erase Suspend
mode. The device allows reading autoselect codes
相关PDF资料 |
PDF描述 |
|---|---|
| Am29F200AB-90FIB | 2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory |
| AM29F200AB-90SC | 2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory |
| Am29F200AB-90SCB | 2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory |
| AM29F200AB-90SE | 2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory |
| AM29F200AB-90SEB | 2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory |
相关代理商/技术参数 |
参数描述 |
|---|---|
| AM29F200AB-90SC | 制造商:Advanced Micro Devices 功能描述:NOR Flash, 128K x 16, 44 Pin, Plastic, SOP |
| AM29F200AB90SI | 制造商:AMD 功能描述:NEW |
| AM29F200AT-120EC | 制造商:Advanced Micro Devices 功能描述:NOR Flash Parallel 5V 2Mbit 256K/128K x 8bit/16bit 120ns 48-Pin TSOP |
| AM29F200AT55EC | 制造商:Advanced Micro Devices 功能描述: |
| AM29F200AT70SI | 制造商:AMD 功能描述:* |
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