参数资料
型号: AM29F200BB-120EF
厂商: SPANSION LLC
元件分类: PROM
英文描述: Flash Memory IC; Leaded Process Compatible:Yes; Memory Size:2Mbit; Package/Case:48-TSOP; Peak Reflow Compatible (260 C):Yes; Supply Voltage Max:5V; Access Time, Tacc:120ns; Series:AM29 RoHS Compliant: Yes
中文描述: 128K X 16 FLASH 5V PROM, 120 ns, PDSO48
封装: LEAD FREE, MO-142DD, TSOP-48
文件页数: 40/41页
文件大小: 818K
代理商: AM29F200BB-120EF
6
Am29F200B
21526D5 March 3, 2009
D A TA
SH EE T
CONNECTION DIAGRAMS
This device is also available in Known Good Die (KGD) form. Refer to publication number 21257 for
more information.
PIN CONFIGURATION
A0–A16
=
17 addresses
DQ0–DQ14 =
15 data inputs/outputs
DQ15/A-1
=
DQ15 (data input/output, word mode),
A-1 (LSB address input, byte mode)
BYTE#
=
Selects 8-bit or 16-bit mode
CE#
=
Chip enable
OE#
=
Output enable
WE#
=
Write enable
RESET#
=
Hardware reset pin, active low
RY/BY#
=
Ready/Busy output
VCC
=
+5.0 V single power supply
(see Product Selector Guide for
device speed ratings and voltage
supply tolerances)
VSS
=
Device ground
NC
=
Pin not connected internally
LOGIC SYMBOL
1
16
2
3
4
5
6
7
8
17
18
19
20
21
22
23
24
9
10
11
12
13
14
15
A16
DQ2
BYTE#
VSS
DQ15/A-1
DQ7
DQ14
DQ6
DQ13
DQ9
DQ1
DQ8
DQ0
OE#
VSS
CE#
A0
DQ5
DQ12
DQ4
VCC
DQ11
DQ3
DQ10
48
33
47
46
45
44
43
42
41
40
39
38
37
36
35
34
25
32
31
30
29
28
27
26
A15
NC
A14
A13
A12
A11
A10
A9
A8
NC
WE#
RESET#
NC
RY/BY#
A1
NC
A7
A6
A5
A4
A3
A2
Standard TSOP
17
16 or 8
DQ0–DQ15
(A-1)
A0–A16
CE#
OE#
WE#
RESET#
BYTE#
RY/BY#
相关PDF资料
PDF描述
AM29F200BB-120SD Flash Memory IC; Leaded Process Compatible:Yes; Memory Size:2Mbit; Package/Case:44-SOIC; Peak Reflow Compatible (260 C):Yes; Supply Voltage Max:5V; Access Time, Tacc:120ns; Series:AM29 RoHS Compliant: Yes
AM29F200BB-70EC Flash Memory IC; Access Time, Tacc:70ns; Package/Case:48-TSOP; Leaded Process Compatible:No; Memory Configuration:256K x 8; Peak Reflow Compatible (260 C):No; Supply Voltage Max:5.5V; Mounting Type:Surface Mount RoHS Compliant: No
AM29F200BB-70ED Flash Memory IC; Memory Size:2Mbit; Memory Configuration:256K x 8; Package/Case:48-TSOP; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes; Supply Voltage Max:5V; Access Time, Tacc:70ns; Mounting Type:Surface Mount RoHS Compliant: Yes
AM29F200BB-70EF Flash Memory IC; Leaded Process Compatible:Yes; Memory Size:2Mbit; Package/Case:48-TSOP; Peak Reflow Compatible (260 C):Yes; Supply Voltage Max:5V; Access Time, Tacc:70ns; Series:AM29 RoHS Compliant: Yes
AM29F200BB-70SD Flash Memory IC; Leaded Process Compatible:Yes; Memory Size:2Mbit; Package/Case:44-SOIC; Peak Reflow Compatible (260 C):Yes; Supply Voltage Max:5V; Access Time, Tacc:70ns; Series:AM29 RoHS Compliant: Yes
相关代理商/技术参数
参数描述
AM29F200BB-120SI 制造商:Spansion 功能描述:NOR Flash Parallel 5V 2Mbit 256K/128K x 8bit/16bit 120ns 44-Pin SOIC
AM29F200BB-120SI\T 制造商:Spansion 功能描述:Flash Mem Parallel 5V 2M-Bit 256K x 8/128K x 16 120ns 44-Pin SOIC T/R
AM29F200BB-45SI 制造商:Advanced Micro Devices 功能描述:
AM29F200BB-55EF 功能描述:闪存 2M (256KX8/128KX16) Parallel NOR Fl 5V RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel
AM29F200BB-55EF\T 制造商:Spansion 功能描述:NOR Flash Parallel 5V 2Mbit 256K/128K x 8bit/16bit 55ns 48-Pin TSOP T/R