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| 型号： | AM29F200BB-90EC |
| 厂商： | SPANSION LLC |
| 元件分类： | PROM |
| 英文描述： | Flash Memory IC; Access Time, Tacc:90ns; Package/Case:48-TSOP; Leaded Process Compatible:No; Memory Configuration:256K x 8; Peak Reflow Compatible (260 C):No; Supply Voltage Max:5.5V; Mounting Type:Surface Mount RoHS Compliant: No |
| 中文描述： | 128K X 16 FLASH 5V PROM, 90 ns, PDSO48 |
| 封装： | MO-142DD, TSOP-48 |
| 文件页数： | 18/41页 |
| 文件大小： | 818K |
| 代理商： | AM29F200BB-90EC |
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March 3, 2009 21526D5
Am29F200B
23
D A TA
SH EE T
DC CHARACTERISTICS (Continued)
CMOS Compatible
Notes:
1. The ICC current listed is typically less than 2 mA/MHz, with OE# at VIH.
2. Maximum ICC specifications are tested with VCC = VCCmax.
3. ICC active while Embedded Program or Erase Algorithm is in progress.
4. Not 100% tested.
5. ICC3 for extended temperature is 20 A max (>+85°C).
Parameter
Symbol
Parameter Description
Test Conditions
Min
Typ
Max
Unit
ILI
Input Load Current
VIN = VSS to VCC, VCC = VCC Max
±1.0
A
ILIT
A9, OE
#, RESET# Input
Load Current
VCC = VCC Max;
A9, OE
#, RESET# = 12.5 V
50
A
ILO
Output Leakage Current
VOUT = VSS to VCC, VCC = VCC Max
±1.0
A
ICC1
VCC Active Read Current
(Notes 1, 2)
CE
# = VIL, OE# = VIH
Byte
20
40
mA
Word
28
50
ICC2
VCC Active Program/Erase
Current (Notes 2, 3, 4)
CE
# = VIL, OE# = VIH
30
50
mA
ICC3
VCC Standby Current
Note (Note 5)
CE
# = VCC ± 0.5 V, OE# = VIH
15
A
VIL
Input Low Voltage
–0.5
0.8
V
VIH
Input High Voltage
0.7 x VCC
VCC + 0.3
V
VID
Voltage for Autoselect and
Temporary Sector Unprotect
VCC = 5.0 V
11.5
12.5
V
VOL
Output Low Voltage
IOL = 5.8 mA, VCC = VCC Min
0.45
V
VOH1
Output Low Voltage
IOH = –2.5 mA, VCC = VCC Min
0.85 VCC
V
VOH2
IOH = –100 A, VCC = VCC Min
VCC – 0.4
V
VLKO
Low VCC Lock-Out Voltage
3.2
4.2
V
相关PDF资料 |
PDF描述 |
|---|---|
| AM29F200BB-90ED | Flash Memory IC; Memory Size:2Mbit; Memory Configuration:256K x 8; Package/Case:48-TSOP; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes; Supply Voltage Max:5V; Access Time, Tacc:90ns; Mounting Type:Surface Mount RoHS Compliant: Yes |
| AM29F200BB-90EF | Flash Memory IC; Leaded Process Compatible:Yes; Memory Size:2Mbit; Package/Case:48-TSOP; Peak Reflow Compatible (260 C):Yes; Supply Voltage Max:5V; Access Time, Tacc:90ns; Series:AM29 RoHS Compliant: Yes |
| AM29F200BB-90SD | Flash Memory IC; Leaded Process Compatible:Yes; Memory Size:2Mbit; Package/Case:44-SOIC; Peak Reflow Compatible (260 C):Yes; Supply Voltage Max:5V; Access Time, Tacc:90ns; Series:AM29 RoHS Compliant: Yes |
| AM29F200BT-120EF | Flash Memory IC; Leaded Process Compatible:Yes; Memory Size:2Mbit; Package/Case:48-TSOP; Peak Reflow Compatible (260 C):Yes; Supply Voltage Max:5V; Access Time, Tacc:120ns; Series:AM29 RoHS Compliant: Yes |
| AM29F200BT-70EC | Flash Memory IC; Access Time, Tacc:70ns; Package/Case:48-TSOP; Leaded Process Compatible:No; Memory Configuration:256K x 8; Peak Reflow Compatible (260 C):No; Supply Voltage Max:5.5V; Mounting Type:Surface Mount RoHS Compliant: No |
相关代理商/技术参数 |
参数描述 |
|---|---|
| AM29F200BB-90EF | 制造商:Advanced Micro Devices 功能描述: |
| AM29F200BB-90EI | 制造商:Spansion 功能描述:2M CMOS FLASH 5V 制造商:Advanced Micro Devices 功能描述: |
| AM29F200BB-90SE | 制造商:Spansion 功能描述:NOR Flash Parallel 5V 2Mbit 256K/128K x 8bit/16bit 90ns 44-Pin SOIC |
| AM29F200BT-120EI | 制造商:Advanced Micro Devices 功能描述:256K X 8 FLASH 5V PROM, 120 ns, PDSO48 |
| AM29F200BT-50EE | 制造商:Spansion 功能描述:NOR Flash Parallel 5V 2Mbit 256K/128K x 8bit/16bit 50ns 48-Pin TSOP |
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