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| 型号： | AM29F200BB-90ED |
| 厂商： | SPANSION LLC |
| 元件分类： | PROM |
| 英文描述： | Flash Memory IC; Memory Size:2Mbit; Memory Configuration:256K x 8; Package/Case:48-TSOP; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes; Supply Voltage Max:5V; Access Time, Tacc:90ns; Mounting Type:Surface Mount RoHS Compliant: Yes |
| 中文描述： | 128K X 16 FLASH 5V PROM, 90 ns, PDSO48 |
| 封装： | LEAD FREE, MO-142DD, TSOP-48 |
| 文件页数： | 31/41页 |
| 文件大小： | 818K |
| 代理商： | AM29F200BB-90ED |
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March 3, 2009 21526D5
Am29F200B
35
D A TA
SH EE T
ERASE AND PROGRAMMING PERFORMANCE
Notes:
1. Typical program and erase times assume the following conditions: 25×C, 5.0 V VCC, 1,000,000 cycles. Additionally,
programming typicals assume checkerboard pattern.
2. Under worst case conditions of 90°C, VCC = 4.5 V (VCC = 4.75 V for ±5% devices), 1,000,000 cycles.
3. The typical chip programming time is considerably less than the maximum chip programming time listed, since most bytes
program faster than the maximum byte program time listed.
4. In the pre-programming step of the Embedded Erase algorithm, all bytes are programmed to 00h before erasure.
5. System-level overhead is the time required to execute the four-bus-cycle command sequence for programming. See Table 1
for further information on command definitions.
6. The device has a guaranteed minimum erase and program cycle endurance of 1,000,000 cycles.
LATCHUP CHARACTERISTICS
Note: Includes all pins except VCC. Test conditions: VCC = 5.0 V, one pin at a time.
TSOP AND SO PIN CAPACITANCE
Notes:
1. Sampled, not 100% tested.
2. Test conditions TA = 25°C, f = 1.0 MHz.
DATA RETENTION
Parameter
Limits
Comments
Typ (Note 1)
Max (Note 2)
Unit
Sector Erase Time
1
8
sec
Excludes 00h programming prior to
erasure (Note 4)
Chip Erase Time
5
sec
Byte Programming Time
7
300
s
Excludes system-level overhead
(Note 5)
Word Programming Time
12
500
s
Chip Programming Time (Note 3)
1.8
5.4
sec
Parameter Description
Min
Max
Input Voltage with respect to VSS on all I/O pins
–1.0 V
VCC + 1.0 V
VCC Current
–100 mA
+100 mA
Parameter
Symbol
Parameter Description
Test Setup
Typ
Max
Unit
CIN
Input Capacitance
VIN = 0
6
7.5
pF
COUT
Output Capacitance
VOUT = 0
8.5
12
pF
CIN2
Control Pin Capacitance
VIN = 0
8
10
pF
Parameter
Test Conditions
Min
Unit
Minimum Pattern Data Retention Time
150
°C
10
Years
125
°C
20
Years
相关PDF资料 |
PDF描述 |
|---|---|
| AM29F200BB-90EF | Flash Memory IC; Leaded Process Compatible:Yes; Memory Size:2Mbit; Package/Case:48-TSOP; Peak Reflow Compatible (260 C):Yes; Supply Voltage Max:5V; Access Time, Tacc:90ns; Series:AM29 RoHS Compliant: Yes |
| AM29F200BB-90SD | Flash Memory IC; Leaded Process Compatible:Yes; Memory Size:2Mbit; Package/Case:44-SOIC; Peak Reflow Compatible (260 C):Yes; Supply Voltage Max:5V; Access Time, Tacc:90ns; Series:AM29 RoHS Compliant: Yes |
| AM29F200BT-120EF | Flash Memory IC; Leaded Process Compatible:Yes; Memory Size:2Mbit; Package/Case:48-TSOP; Peak Reflow Compatible (260 C):Yes; Supply Voltage Max:5V; Access Time, Tacc:120ns; Series:AM29 RoHS Compliant: Yes |
| AM29F200BT-70EC | Flash Memory IC; Access Time, Tacc:70ns; Package/Case:48-TSOP; Leaded Process Compatible:No; Memory Configuration:256K x 8; Peak Reflow Compatible (260 C):No; Supply Voltage Max:5.5V; Mounting Type:Surface Mount RoHS Compliant: No |
| AM29F200BT-70ED | Flash Memory IC; Memory Size:2Mbit; Memory Configuration:256K x 8; Package/Case:48-TSOP; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes; Supply Voltage Max:5V; Access Time, Tacc:70ns; Mounting Type:Surface Mount RoHS Compliant: Yes |
相关代理商/技术参数 |
参数描述 |
|---|---|
| AM29F200BB-90EF | 制造商:Advanced Micro Devices 功能描述: |
| AM29F200BB-90EI | 制造商:Spansion 功能描述:2M CMOS FLASH 5V 制造商:Advanced Micro Devices 功能描述: |
| AM29F200BB-90SE | 制造商:Spansion 功能描述:NOR Flash Parallel 5V 2Mbit 256K/128K x 8bit/16bit 90ns 44-Pin SOIC |
| AM29F200BT-120EI | 制造商:Advanced Micro Devices 功能描述:256K X 8 FLASH 5V PROM, 120 ns, PDSO48 |
| AM29F200BT-50EE | 制造商:Spansion 功能描述:NOR Flash Parallel 5V 2Mbit 256K/128K x 8bit/16bit 50ns 48-Pin TSOP |
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