参数资料
型号: AM29F200BB-90SD
厂商: SPANSION LLC
元件分类: PROM
英文描述: Flash Memory IC; Leaded Process Compatible:Yes; Memory Size:2Mbit; Package/Case:44-SOIC; Peak Reflow Compatible (260 C):Yes; Supply Voltage Max:5V; Access Time, Tacc:90ns; Series:AM29 RoHS Compliant: Yes
中文描述: 128K X 16 FLASH 5V PROM, 90 ns, PDSO44
封装: LEAD FREE, MO-180AA, SOP-44
文件页数: 10/41页
文件大小: 818K
代理商: AM29F200BB-90SD
16
Am29F200B
21526D5 March 3, 2009
D A TA
SH EE T
Command Definitions
Table 5.
Am29F200B Command Definitions
Legend:
X = Don’t care
RA = Address of the memory location to be read.
RD = Data read from location RA during read operation.
PA = Address of the memory location to be programmed.
Addresses latch on the falling edge of the WE# or CE# pulse,
whichever happens later.
PD = Data to be programmed at location PA. Data latches on the
rising edge of WE# or CE# pulse, whichever happens first.
SA = Address of the sector to be verified (in autoselect mode) or
erased. Address bits A16–A12 uniquely select any sector.
Notes:
1. See Table 1 for description of bus operations.
2. All values are in hexadecimal.
3. Except when reading array or autoselect data, all bus cycles
are write operations.
4. Data bits DQ15–DQ8 are don’t cares for unlock and
command cycles.
5. Address bits A16–A11 are don’t cares for unlock and
command cycles, unless SA or PA required.
6. No unlock or command cycles required when reading array
data.
7. The Reset command is required to return to reading array
data when device is in the autoselect mode, or if DQ5 goes
high (while the device is providing status data).
8. The fourth cycle of the autoselect command sequence is a
read cycle.
9. The data is 00h for an unprotected sector and 01h for a
protected sector. See “Autoselect Command Sequence” for
more information.
10. The system may read and program in non-erasing sectors, or
enter the autoselect mode, when in the Erase Suspend
mode. The Erase Suspend command is valid only during a
sector erase operation.
11. The Erase Resume command is valid only during the Erase
Suspend mode.
Command
Sequence
Bus Cycles (Notes 2–5)
First
Second
Third
Fourth
Fifth
Sixth
Addr
Data
Addr
Data
Addr
Data Addr
Data
Addr Data
Addr
Data
1
RA
RD
Reset (Note 7)
1
XXX
F0
Manufacturer ID
Word
4
555
AA
2AA
55
555
90
X00
01
Byte
AAA
555
AAA
Device ID,
Top Boot Block
Word
4
555
AA
2AA
55
555
90
X01
2251
Byte
AAA
555
AAA
X02
51
Device ID,
Bottom Boot Block
Word
4
555
AA
2AA
55
555
90
X01
2257
Byte
AAA
555
AAA
X02
57
Sector Protect Verify
Word
4
555
AA
2AA
55
555
90
(SA)
X02
XX00
XX01
Byte
AAA
555
AAA
(SA)
X04
00
01
Program
Word
4
555
AA
2AA
55
555
A0
PA
PD
Byte
AAA
555
AAA
Chip Erase
Word
6
555
AA
2AA
55
555
80
555
AA
2AA
55
555
10
Byte
AAA
555
AAA
555
AAA
Sector Erase
Word
6
555
AA
2AA
55
555
80
555
AA
2AA
55
SA
30
Byte
AAA
555
AAA
555
Erase Suspend (Note 10)
1
XXX
B0
Erase Resume (Note 11)
1
XXX
30
Cyc
les
A
u
tosel
e
ct
(Note
相关PDF资料
PDF描述
AM29F200BT-120EF Flash Memory IC; Leaded Process Compatible:Yes; Memory Size:2Mbit; Package/Case:48-TSOP; Peak Reflow Compatible (260 C):Yes; Supply Voltage Max:5V; Access Time, Tacc:120ns; Series:AM29 RoHS Compliant: Yes
AM29F200BT-70EC Flash Memory IC; Access Time, Tacc:70ns; Package/Case:48-TSOP; Leaded Process Compatible:No; Memory Configuration:256K x 8; Peak Reflow Compatible (260 C):No; Supply Voltage Max:5.5V; Mounting Type:Surface Mount RoHS Compliant: No
AM29F200BT-70ED Flash Memory IC; Memory Size:2Mbit; Memory Configuration:256K x 8; Package/Case:48-TSOP; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes; Supply Voltage Max:5V; Access Time, Tacc:70ns; Mounting Type:Surface Mount RoHS Compliant: Yes
AM29F200BT-70EF Flash Memory IC; Leaded Process Compatible:Yes; Memory Size:2Mbit; Package/Case:48-TSOP; Peak Reflow Compatible (260 C):Yes; Supply Voltage Max:5V; Access Time, Tacc:70ns; Series:AM29 RoHS Compliant: Yes
AM29F200BT-70SD Flash Memory IC; Leaded Process Compatible:Yes; Memory Size:2Mbit; Package/Case:44-SOIC; Peak Reflow Compatible (260 C):Yes; Supply Voltage Max:5V; Access Time, Tacc:70ns; Series:AM29 RoHS Compliant: Yes
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