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参数资料
| 型号： | AM29F400BB-120ED |
| 厂商： | SPANSION LLC |
| 元件分类： | PROM |
| 英文描述： | Flash Memory IC; Leaded Process Compatible:Yes; Memory Size:4Mbit; Package/Case:48-TSOP; Peak Reflow Compatible (260 C):Yes; Supply Voltage Max:5V; Access Time, Tacc:120ns; Series:AM29 RoHS Compliant: Yes |
| 中文描述： | 256K X 16 FLASH 5V PROM, 120 ns, PDSO48 |
| 封装： | LEAD FREE, MO-142DD, TSOP-48 |
| 文件页数： | 23/43页 |
| 文件大小： | 865K |
| 代理商： | AM29F400BB-120ED |
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DATA SHEET
This Data Sheet states AMD’s current technical specifications regarding the Products described herein. This Data
Sheet may be revised by subsequent versions or modifications due to changes in technical specifications.
Publication# 21505
Rev: E Amendment: 6
Issue Date: March 3, 2009
Am29F400B
4 Megabit (512 K x 8-Bit/256 K x 16-Bit)
CMOS 5.0 Volt-only Boot Sector Flash Memory
This product has been retired and is not recommended for designs. Please contact your Spansion representative
for alternates. Availability of this document is retained for reference and historical purposes only.
DISTINCTIVE CHARACTERISTICS
■ Single power supply operation
— 5.0 volt-only operation for read, erase, and
program operations
— Minimizes system level requirements
■ Manufactured on 0.32 m process technology
— Compatible with 0.5 m Am29F400 device
■ High performance
— Access times as fast as 45 ns
■ Low power consumption (typical values at
5 MHz)
— 1 A standby mode current
— 20 mA read current (byte mode)
— 28 mA read current (word mode)
— 30 mA program/erase current
■ Flexible sector architecture
— One 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and
seven 64 Kbyte sectors (byte mode)
— One 8 Kword, two 4 Kword, one 16 Kword, and
seven 32 Kword sectors (word mode)
— Supports full chip erase
— Sector Protection features:
A hardware method of locking a sector to
prevent any program or erase operations within
that sector
Sectors can be locked via programming
equipment
Temporary Sector Unprotect feature allows code
changes in previously locked sectors
■ Top or bottom boot block configurations available
■ Embedded Algorithms
— Embedded Erase algorithm automatically
preprograms and erases the entire chip or any
combination of designated sectors
— Embedded Program algorithm automatically
writes and verifies data at specified addresses
■ Minimum 1,000,000 program/erase cycles per
sector guaranteed
■ 20-year data retention at 125°C
— Reliable operation for the life of the system
■ Package option
— 48-pin TSOP
— 44-pin SO
— Known Good Die (KGD)
(see publication number 21258)
■ Compatibility with JEDEC standards
— Pinout and software compatible with single-
power-supply Flash
— Superior inadvertent write protection
■ Data# Polling and toggle bits
— Provides a software method of detecting
program or erase operation completion
■ Ready/Busy# pin (RY/BY#)
— Provides a hardware method of detecting
program or erase cycle completion
■ Erase Suspend/Erase Resume
— Suspends an erase operation to read data from,
or program data to, a sector that is not being
erased, then resumes the erase operation
■ Hardware reset pin (RESET#)
— Hardware method to reset the device to reading
array data
相关PDF资料 |
PDF描述 |
|---|---|
| AM29F400BB-120EF | Flash Memory IC; Leaded Process Compatible:Yes; Memory Size:4Mbit; Package/Case:48-TSOP; Peak Reflow Compatible (260 C):Yes; Supply Voltage Max:5V; Access Time, Tacc:120ns; Series:AM29 RoHS Compliant: Yes |
| AM29F400BB-120SD | Flash Memory IC; Leaded Process Compatible:Yes; Memory Size:4Mbit; Package/Case:44-SOIC; Peak Reflow Compatible (260 C):Yes; Supply Voltage Max:5V; Access Time, Tacc:120ns; Series:AM29 RoHS Compliant: Yes |
| AM29F400BB-55ED | Flash Memory IC; Leaded Process Compatible:Yes; Memory Size:4Mbit; Package/Case:48-TSOP; Peak Reflow Compatible (260 C):Yes; Supply Voltage Max:5V; Access Time, Tacc:55ns; Series:AM29 RoHS Compliant: Yes |
| AM29F400BB-55SD | Flash Memory IC; Leaded Process Compatible:Yes; Memory Size:4Mbit; Package/Case:44-SOIC; Peak Reflow Compatible (260 C):Yes; Supply Voltage Max:5V; Access Time, Tacc:55ns; Series:AM29 RoHS Compliant: Yes |
| AM29F400BB-70ED | Flash Memory IC; Memory Size:4Mbit; Memory Configuration:256K x 16 / 512K x 8; Package/Case:48-TSOP; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes; Supply Voltage Max:5V; Access Time, Tacc:70ns RoHS Compliant: Yes |
相关代理商/技术参数 |
参数描述 |
|---|---|
| AM29F400BB-120SC | 制造商:Advanced Micro Devices 功能描述: |
| AM29F400BB120SI | 制造商:AMD 功能描述:* |
| AM29F400BB45EF | 制造商:Spansion 功能描述:NOR Flash Parallel 5V 4Mbit 512K/256K x 8bit/16bit 45ns 48-Pin TSOP |
| AM29F400BB-45EFT | 制造商:Spansion 功能描述: |
| AM29F400BB-45EI | 制造商:Spansion 功能描述: |
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