参数资料
型号: AM29F400BB-70EC
厂商: ADVANCED MICRO DEVICES INC
元件分类: PROM
英文描述: 4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 5.0 Volt-only Boot Sector Flash Memory
中文描述: 256K X 16 FLASH 5V PROM, 70 ns, PDSO48
封装: MO-142DD, TSOP-48
文件页数: 36/41页
文件大小: 919K
代理商: AM29F400BB-70EC
Am29F400B
41
General Description
Third paragraph: Added 45 ns to access times.
Product Selector Guide
Added the -45 speed option for VCC = 5.0 V ± 5% and
the -55 speed option for VCC = 5.0 V ± 10%.
Ordering Information
Added “Special Designation” to “Optional Processing”
heading; added “0” for 55 ns 10% VCC, deleted burn-in.
Burn-in is available by contacting an AMD representative.
Added -55 ± 10% and -45 speed options to the list of
valid combinations. Added extended temperature
ratings to -55 ±5% valid combinations.
Table 1, Device Bus Operations
Changed the BYTE#=VIL input for DQ8–DQ15 during
temporary sector unprotect to “don’t care” (X).
Figure 6. Maximum Negative Undershoot
Waveform
Corrected figure title.
Table 7, Test Specifications
Test load capacitance: Removed 55 ns speed option
from and added -45 speed option to the 30 pF.
DC Characteristics
Removed VCC = VCC max test condition for ICC1 – ICC3.
VCC max is only valid for max specs.
AC Characteristics
Added the -45 speed option.
Revision C+4 (August 1998)
Ordering Information
Added extended temperature combinations to the -55,
±10% speed option.
Deleted the -60 speed option.
Revision D (January 1999)
Distinctive Characteristics
Added:
s 20-year data retention at 125
°C
— Reliable operation for the life of the system
DC Characteristics—TTL/NMOS Compatible
ICC1, ICC2, ICC3: Added Note 2 “Maximum ICC
specifications are tested with VCC = VCCmax”.
DC Characteristics—CMOS Compatible
ICC1, ICC2, ICC3: Added Note 2 “Maximum ICC
specifications are tested with VCC = VCCmax”.
Erase and Programming Performance
Deleted “(4.75 V for -45 and -55xx0)” from Note 2.
Revision D+1 (July 2, 1999)
Global
Added references to availability of device in Known
Good Die (KGD) form.
Revision E (November 15, 1999)
AC Characteristics—Figure 13. Program
Operations Timing and Figure 14. Chip/Sector
Erase Operations
Deleted tGHWL and changed OE# waveform to start at
high.
Physical Dimensions
Replaced figures with more detailed illustrations.
Revision E+1 (November 30, 2000)
Added table of contents. Reinserted revision summa-
ries for revisions A and B.
Trademarks
Copyright 2000 Advanced Micro Devices, Inc. All rights reserved.
AMD, the AMD logo, and combinations thereof are registered trademarks of Advanced Micro Devices, Inc.
ExpressFlash
is a trademark of Advanced Micro Devices, Inc.
Product names used in this publication are for identification purposes only and may be trademarks of their respective companies.
相关PDF资料
PDF描述
AM29F400BB-70EE 4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 5.0 Volt-only Boot Sector Flash Memory
AM29F400BB-70SE 4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 5.0 Volt-only Boot Sector Flash Memory
AM29F400BB-70EEB 4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 5.0 Volt-only Boot Sector Flash Memory
AM29LL800T-200EBB 1M X 8 FLASH 3V PROM, 200 ns, PDSO48
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相关代理商/技术参数
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AM29F400BB-70ED 制造商:Spansion 功能描述:FLASH BOTTOM BLOCK 4MB SMD 29F400 制造商:Spansion 功能描述:FLASH BOTTOM BLOCK 4MB, SMD, 29F400
AM29F400BB-70ED/T 制造商:Spansion 功能描述:NOR Flash Parallel 5V 4Mbit 512K/256K x 8bit/16bit 70ns 48-Pin TSOP T/R
AM29F400BB-70EF 功能描述:闪存 4M (512KX8/256Kx16) Parallel NOR Fl 5V RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel
AM29F400BB-70EF\\T 制造商:Spansion 功能描述:
AM29F400BB-70EF\T 功能描述:闪存 4M (512KX8/256Kx16) Parallel NOR Fl 5V RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel