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| 型号： | AM29F400BB-90EC |
| 厂商： | SPANSION LLC |
| 元件分类： | PROM |
| 英文描述： | Flash Memory IC; Access Time, Tacc:90ns; Package/Case:48-TSOP; Leaded Process Compatible:No; Memory Configuration:256K x 16 / 512K x 8; Memory Size:4Mbit; Peak Reflow Compatible (260 C):No; Supply Voltage Max:5.5V RoHS Compliant: No |
| 中文描述： | 256K X 16 FLASH 5V PROM, 90 ns, PDSO48 |
| 封装： | MO-142DD, TSOP-48 |
| 文件页数： | 6/43页 |
| 文件大小： | 865K |
| 代理商： | AM29F400BB-90EC |
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12
Am29F400B
21505E6 March 3, 2009
D A TA
SH EE T
Hardware Data Protection
The command sequence requirement of unlock cycles
for programming or erasing provides data protection
against inadver tent writes (refer to Table 5 for
command definitions). In addition, the following hard-
ware data protection measures prevent accidental
erasure or programming, which might otherwise be
caused by spurious system level signals during VCC
power-up and power-down transitions, or from system
noise.
Low VCC Write Inhibit
When VCC is less than VLKO, the device does not
accept any write cycles. This protects data during VCC
power-up and power-down. The command register and
all internal program/erase circuits are disabled, and the
device resets. Subsequent writes are ignored until VCC
is greater than VLKO. The system must provide the
proper signals to the control pins to prevent uninten-
tional writes when VCC is greater than VLKO.
Write Pulse “Glitch” Protection
Noise pulses of less than 5 ns (typical) on OE#, CE# or
WE# do not initiate a write cycle.
Logical Inhibit
Write cycles are inhibited by holding any one of OE# =
VIL, CE# = VIH or WE# = VIH. To initiate a write cycle,
CE# and WE# must be a logical zero while OE# is a
logical one.
Power-Up Write Inhibit
If WE# = CE# = VIL and OE# = VIH during power up, the
device does not accept commands on the rising edge
of WE#. The internal state machine is automatically
reset to reading array data on power-up.
相关PDF资料 |
PDF描述 |
|---|---|
| AM29F400BB-90ED | Flash Memory IC; Memory Size:4Mbit; Memory Configuration:256K x 16 / 512K x 8; Package/Case:48-TSOP; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes; Supply Voltage Max:5V; Access Time, Tacc:90ns RoHS Compliant: Yes |
| AM29F400BT-120EF | Flash Memory IC; Leaded Process Compatible:Yes; Memory Size:4Mbit; Package/Case:48-TSOP; Peak Reflow Compatible (260 C):Yes; Supply Voltage Max:5V; Access Time, Tacc:120ns; Series:AM29 RoHS Compliant: Yes |
| AM29F400BT-55ED | Flash Memory IC; Leaded Process Compatible:Yes; Memory Size:4Mbit; Package/Case:48-TSOP; Peak Reflow Compatible (260 C):Yes; Supply Voltage Max:5V; Access Time, Tacc:55ns; Series:AM29 RoHS Compliant: Yes |
| AM29F400BT-70EC | Flash Memory IC; Access Time, Tacc:70ns; Package/Case:48-TSOP; Leaded Process Compatible:No; Memory Configuration:256K x 16 / 512K x 8; Peak Reflow Compatible (260 C):No; Supply Voltage Max:5.5V; Mounting Type:Surface Mount RoHS Compliant: No |
| AM29F400BT-70ED | Flash Memory IC; Memory Configuration:256K x 16 / 512K x 8; Package/Case:48-TSOP; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes; Supply Voltage Max:5.5V; Access Time, Tacc:70ns; Mounting Type:Surface Mount RoHS Compliant: Yes |
相关代理商/技术参数 |
参数描述 |
|---|---|
| AM29F400BB-90ED | 制造商:Spansion 功能描述:FLASH BOTTOM BLOCK 4MB SMD 29F400 |
| AM29F400BB-90EF | 功能描述:闪存 4M (512KX8/256Kx16) Parallel NOR Fl 5V RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| AM29F400-BB90EI | 制造商:Advanced Micro Devices 功能描述: |
| AM29F400BB-90EI | 制造商:Spansion 功能描述:NOR Flash Parallel 5V 4Mbit 512K/256K x 8bit/16bit 90ns 48-Pin TSOP 制造商:Spansion 功能描述:4M CMOS FLASH 5V 制造商:Advanced Micro Devices 功能描述:NOR Flash, 256K x 16, 48 Pin, Plastic, TSSOP |
| AM29F400BB-90EK | 制造商:Spansion 功能描述: |
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