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参数资料
| 型号： | AM29F400BB-90EF |
| 厂商： | SPANSION LLC |
| 元件分类： | PROM |
| 英文描述： | Flash Memory IC; Leaded Process Compatible:Yes; Memory Size:4Mbit; Package/Case:48-TSOP; Peak Reflow Compatible (260 C):Yes; Supply Voltage Max:5V; Access Time, Tacc:90ns; Series:AM29 RoHS Compliant: Yes |
| 中文描述： | 256K X 16 FLASH 5V PROM, 90 ns, PDSO48 |
| 封装： | LEAD FREE, MO-142BDD, TSOP-48 |
| 文件页数： | 25/43页 |
| 文件大小： | 856K |
| 代理商： | AM29F400BB-90EF |
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November 11, 2009 21505E8
Am29F400B
29
D A TA
SH EE T
AC CHARACTERISTICS
Erase/Program Operations
Notes:
1. Not 100% tested.
2. See the “Erase and Programming Performance” section for more information.
Parameter
Speed Options
JEDEC
Std
Description
-45
-50
-55
-70
-90
Unit
tAVAV
tWC
Write Cycle Time (Note 1)
Min
45
50
55
70
90
ns
tAVWL
tAS
Address Setup Time
Min
0
ns
tWLAX
tAH
Address Hold Time
Min
45
ns
tDVWH
tDS
Data Setup Time
Min
2525
2530
45
ns
tWHDX
tDH
Data Hold Time
Min
0
ns
tOES
Output Enable Setup Time
Min
0
ns
tGHWL
Read Recovery Time Before Write
(OE# High to WE# Low)
Min
0
ns
tELWL
tCS
CE# Setup Time
Min
0
ns
tWHEH
tCH
CE# Hold Time
Min
0
ns
tWLWH
tWP
Write Pulse Width
Min
30
35
45
ns
tWHWL
tWPH
Write Pulse Width High
Min
20
ns
tWHWH1
Programming Operation (Note
Byte
Typ
7
s
Word
Typ
12
tWHWH2
Sector Erase Operation (Note 2)
Typ
1
sec
tVCS
Min
50
s
tRB
Recovery Time from RY/BY#
Min
0
ns
tBUSY
Program/Erase Valid to RY/BY# Delay
Max
30
35
ns
相关PDF资料 |
PDF描述 |
|---|---|
| AM29F400BB-90SF | Flash Memory IC; Memory Size:4Mbit; Package/Case:44-SOIC; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes; Supply Voltage Max:5V; Access Time, Tacc:90ns; Series:AM29 RoHS Compliant: Yes |
| AM29F400BT-55EF | Flash Memory IC; Leaded Process Compatible:Yes; Memory Size:4Mbit; Package/Case:48-TSOP; Peak Reflow Compatible (260 C):Yes; Supply Voltage Max:5V; Access Time, Tacc:55ns; Series:AM29 |
| AM29F400BT-55SF | Flash Memory IC; Leaded Process Compatible:Yes; Memory Size:4Mbit; Package/Case:44-SOIC; Peak Reflow Compatible (260 C):Yes; Supply Voltage Max:5V; Access Time, Tacc:55ns; Series:AM29 RoHS Compliant: Yes |
| AM29F400BT-70EF | Flash Memory IC; Leaded Process Compatible:Yes; Memory Size:4Mbit; Package/Case:48-TSOP; Peak Reflow Compatible (260 C):Yes; Supply Voltage Max:5V; Access Time, Tacc:70ns; Series:AM29 RoHS Compliant: Yes |
| AM29F400BT-70SF | Flash Memory IC; Leaded Process Compatible:Yes; Memory Size:4Mbit; Package/Case:44-SOIC; Peak Reflow Compatible (260 C):Yes; Supply Voltage Max:5V; Access Time, Tacc:70ns; Series:AM29 RoHS Compliant: Yes |
相关代理商/技术参数 |
参数描述 |
|---|---|
| AM29F400-BB90EI | 制造商:Advanced Micro Devices 功能描述: |
| AM29F400BB-90EI | 制造商:Spansion 功能描述:NOR Flash Parallel 5V 4Mbit 512K/256K x 8bit/16bit 90ns 48-Pin TSOP 制造商:Spansion 功能描述:4M CMOS FLASH 5V 制造商:Advanced Micro Devices 功能描述:NOR Flash, 256K x 16, 48 Pin, Plastic, TSSOP |
| AM29F400BB-90EK | 制造商:Spansion 功能描述: |
| AM29F400BB-90SD | 制造商:Spansion 功能描述:Flash Memory IC |
| AM29F400BB-90SE | 制造商:Spansion 功能描述:NOR Flash Parallel 5V 4Mbit 512K/256K x 8bit/16bit 90ns 44-Pin SO 制造商:Advanced Micro Devices 功能描述:NOR Flash, 256K x 16, 44 Pin, Plastic, SOP |
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