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| 型号： | AM29F400BT-70ED |
| 厂商： | SPANSION LLC |
| 元件分类： | PROM |
| 英文描述： | Flash Memory IC; Memory Configuration:256K x 16 / 512K x 8; Package/Case:48-TSOP; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes; Supply Voltage Max:5.5V; Access Time, Tacc:70ns; Mounting Type:Surface Mount RoHS Compliant: Yes |
| 中文描述： | 256K X 16 FLASH 5V PROM, 70 ns, PDSO48 |
| 封装： | LEAD FREE, MO-142DD, TSOP-48 |
| 文件页数： | 11/43页 |
| 文件大小： | 865K |
| 代理商： | AM29F400BT-70ED |
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March 3, 2009 21505E6
Am29F400B
17
D A TA
SH EE T
Table 5.
Am29F400B Command Definitions
Legend:
X = Don’t care
RA = Address of the memory location to be read.
RD = Data read from location RA during read operation.
PA = Address of the memory location to be programmed.
Addresses latch on the falling edge of the WE# or CE# pulse,
whichever happens later.
PD = Data to be programmed at location PA. Data latches on the
rising edge of WE# or CE# pulse, whichever happens first.
SA = Address of the sector to be verified (in autoselect mode) or
erased. Address bits A17–A12 uniquely select any sector.
Notes:
1. See Table 1 for description of bus operations.
2. All values are in hexadecimal.
3. Except when reading array or autoselect data, all bus cycles
are write operations.
4. Data bits DQ15–DQ8 are don’t cares for unlock and
command cycles.
5. Address bits A17–A11 are don’t cares for unlock and
command cycles, unless PA or SA required.
6. No unlock or command cycles required when reading array
data.
7. The Reset command is required to return to reading array
data when device is in the autoselect mode, or if DQ5 goes
high (while the device is providing status data).
8. The fourth cycle of the autoselect command sequence is a
read cycle.
9. The data is 00h for an unprotected sector and 01h for a
protected sector. See“Autoselect Command Sequence” for
more information.
10. The system may read and program in non-erasing sectors, or
enter the autoselect mode, when in the Erase Suspend
mode. The Erase Suspend command is valid only during a
sector erase operation.
11. The Erase Resume command is valid only during the Erase
Suspend mode.
Command
Sequence
Cy
c
les
Bus Cycles (Notes 2–5)
First
Second
Third
Fourth
Fifth
Sixth
Addr
Data
Addr
Data
Addr
Data Addr
Data
Addr Data
Addr
Data
Read (Note 6)
1
RA
RD
Reset (Note 7)
1
XXX
F0
A
u
toselect
(
Manufacturer ID
Word
4
555
AA
2AA
55
555
90
X00
01
Byte
AAA
555
AAA
Device ID,
Top Boot Block
Word
4
555
AA
2AA
55
555
90
X01
2223
Byte
AAA
555
AAA
X02
23
Device ID,
Bottom Boot Block
Word
4
555
AA
2AA
55
555
90
X01
22AB
Byte
AAA
555
AAA
X02
AB
Sector Protect Verify
Word
4
555
AA
2AA
55
555
90
(SA)
X02
XX00
XX01
Byte
AAA
555
AAA
(SA)
X04
00
01
Program
Word
4
555
AA
2AA
55
555
A0
PA
PD
Byte
AAA
555
AAA
Chip Erase
Word
6
555
AA
2AA
55
555
80
555
AA
2AA
55
555
10
Byte
AAA
555
AAA
555
AAA
Sector Erase
Word
6
555
AA
2AA
55
555
80
555
AA
2AA
55
SA
30
Byte
AAA
555
AAA
555
Erase Suspend (Note 10)
1
XXX
B0
Erase Resume (Note 11)
1
XXX
30
相关PDF资料 |
PDF描述 |
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| AM29F400BT-70SD | Flash Memory IC; Leaded Process Compatible:Yes; Memory Size:4Mbit; Package/Case:44-SOIC; Peak Reflow Compatible (260 C):Yes; Supply Voltage Max:5V; Access Time, Tacc:70ns; Series:AM29 RoHS Compliant: Yes |
| AM29F400BT-90ED | Flash Memory IC; Memory Configuration:256K x 16 / 512K x 8; Package/Case:48-TSOP; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes; Supply Voltage Max:5.5V; Access Time, Tacc:90ns; Mounting Type:Surface Mount RoHS Compliant: Yes |
| AM29F400BB-55EF | Flash Memory IC; Leaded Process Compatible:Yes; Memory Size:4Mbit; Package/Case:48-TSOP; Peak Reflow Compatible (260 C):Yes; Supply Voltage Max:5V; Access Time, Tacc:55ns; Series:AM29 RoHS Compliant: Yes |
| AM29F400BB-55SF | Flash Memory IC; Leaded Process Compatible:Yes; Memory Size:4Mbit; Package/Case:44-SOIC; Peak Reflow Compatible (260 C):Yes; Supply Voltage Max:5V; Access Time, Tacc:55ns; Series:AM29 RoHS Compliant: Yes |
| AM29F400BB-70EF | Flash Memory IC; Leaded Process Compatible:Yes; Memory Size:4Mbit; Package/Case:48-TSOP; Peak Reflow Compatible (260 C):Yes; Supply Voltage Max:5V; Access Time, Tacc:70ns; Series:AM29 RoHS Compliant: Yes |
相关代理商/技术参数 |
参数描述 |
|---|---|
| AM29F400BT-70EF | 功能描述:闪存 4M (512KX8/256Kx16) Parallel NOR Fl 5V RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| AM29F400BT-70EF\\T | 制造商:Spansion 功能描述:IC 4MEG FLSH X 16 CMOS TOP SECTOR CS39S |
| AM29F400BT-70EF\T | 功能描述:闪存 IC 4MEG FLSH X 16 CMOS TOP SECTR CS39S RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| AM29F400BT-70SC | 制造商:Advanced Micro Devices 功能描述: |
| AM29F400BT-70SF | 功能描述:闪存 4M (512KX8/256Kx16) Parallel NOR Fl 5V RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
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