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参数资料
| 型号： | AM29F400BT-90EC0 |
| 厂商： | Advanced Micro Devices, Inc. |
| 英文描述： | 4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 5.0 Volt-only Boot Sector Flash Memory |
| 中文描述： | 4兆位（512亩x 8-Bit/256亩x 16位），5.0伏的CMOS只引导扇区闪存 |
| 文件页数： | 14/43页 |
| 文件大小： | 548K |
| 代理商： | AM29F400BT-90EC0 |
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12
Am29F400B
21505E5 November1,2006
D A T A S H E E T
Hardware Data Protection
The command sequence requirement of unlock cycles
for programming or erasing provides data protection
against inadvertent writes (refer to Table 5 for
command definitions). In addition, the following hard-
ware data protection measures prevent accidental
erasure or programming, which might otherwise be
caused by spurious system level signals during V
CC
power-up and power-down transitions, or from system
noise.
Low V
CC
Write Inhibit
When V
CC
is less than V
LKO
, the device does not
accept any write cycles. This protects data during V
CC
power-up and power-down. The command register and
all internal program/erase circuits are disabled, and the
device resets. Subsequent writes are ignored until V
CC
is greater than V
LKO
. The system must provide the
proper signals to the control pins to prevent uninten-
tional writes when V
CC
is greater than V
LKO
.
Write Pulse “Glitch” Protection
Noise pulses of less than 5 ns (typical) on OE#, CE# or
WE# do not initiate a write cycle.
Logical Inhibit
Write cycles are inhibited by holding any one of OE# =
V
IL
, CE# = V
IH
or WE# = V
IH
. To initiate a write cycle,
CE# and WE# must be a logical zero while OE# is a
logical one.
Power-Up Write Inhibit
If WE# = CE# = V
IL
and OE# = V
IH
during power up, the
device does not accept commands on the rising edge
of WE#. The internal state machine is automatically
reset to reading array data on power-up.
相关PDF资料 |
PDF描述 |
|---|---|
| AM29F400BT-90ED | 4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 5.0 Volt-only Boot Sector Flash Memory |
| AM29F400BT-90ED0 | 4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 5.0 Volt-only Boot Sector Flash Memory |
| AM29F400BT-90EE | 4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 5.0 Volt-only Boot Sector Flash Memory |
| AM29F400BT-90EE0 | 4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 5.0 Volt-only Boot Sector Flash Memory |
| AM29F400BT-90EF | 4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 5.0 Volt-only Boot Sector Flash Memory |
相关代理商/技术参数 |
参数描述 |
|---|---|
| AM29F400BT-90ED | 制造商:Spansion 功能描述:FLASH TOP BLOCK 4MB SMD 29F400 |
| AM29F400BT-90EF | 功能描述:闪存 4M (512KX8/256Kx16) Parallel NOR Fl 5V RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| AM29F400BT-90EI\T | 制造商:Advanced Micro Devices 功能描述:Flash Mem Parallel 5V 4M-Bit 512K x 8/256K x 16 90ns 48-Pin TSOP T/R |
| AM29F400BT-90SE\T | 制造商:Spansion 功能描述:4 MEGABIT (512 K X 8-BIT/256 K X 16-BIT) CMOS 5.0 VOLT-ONLY BOOT SECTOR FLASH MEMORY |
| AM29F400BT-90SF\\T | 制造商:Spansion 功能描述:NOR Flash Parallel 5V 4Mbit 512K/256K x 8bit/16bit 90ns 44-Pin SO T/R |
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