- 您现在的位置：买卖IC网 > PDF目录366440 > AM29F400BT-90ED (Advanced Micro Devices, Inc.) 4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 5.0 Volt-only Boot Sector Flash Memory PDF资料下载
参数资料
| 型号： | AM29F400BT-90ED |
| 厂商： | Advanced Micro Devices, Inc. |
| 英文描述： | 4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 5.0 Volt-only Boot Sector Flash Memory |
| 中文描述： | 4兆位（512亩x 8-Bit/256亩x 16位），5.0伏的CMOS只引导扇区闪存 |
| 文件页数： | 5/43页 |
| 文件大小： | 548K |
| 代理商： | AM29F400BT-90ED |
第1页第2页第3页第4页当前第5页第6页第7页第8页第9页第10页第11页第12页第13页第14页第15页第16页第17页第18页第19页第20页第21页第22页第23页第24页第25页第26页第27页第28页第29页第30页第31页第32页第33页第34页第35页第36页第37页第38页第39页第40页第41页第42页第43页
November1,2006 21505E5
Am29F400B
3
D A T A S H E E T
TABLE OF CONTENTS
Product Selector Guide. . . . . . . . . . . . . . . . . . . . . 4
Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Connection Diagrams . . . . . . . . . . . . . . . . . . . . . . 5
Pin Configuration. . . . . . . . . . . . . . . . . . . . . . . . . . 6
Logic Symbol . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Ordering Information. . . . . . . . . . . . . . . . . . . . . . . 7
Device Bus Operations . . . . . . . . . . . . . . . . . . . . . 8
Table 1. Am29F400B Device Bus Operations.................................. 8
Word/Byte Configuration ..........................................................8
Requirements for Reading Array Data .....................................8
Writing Commands/Command Sequences ..............................8
Program and Erase Operation Status ......................................9
Standby Mode ..........................................................................9
RESET#: Hardware Reset Pin .................................................9
Output Disable Mode ................................................................9
Table 2. Am29F400BT Top Boot Block Sector Address Table....... 10
Table 3. Am29F400BB Bottom Boot Block Sector Address Table.. 10
Autoselect Mode .....................................................................10
Table 4. Am29F400B Autoselect Codes (High Voltage Method).... 11
Sector Protection/Unprotection ...............................................11
Temporary Sector Unprotect ..................................................11
Figure 1. Temporary Sector Unprotect Operation........................... 11
Hardware Data Protection ......................................................12
Low V
CC
Write Inhibit...................................................................... 12
Write Pulse “Glitch” Protection........................................................ 12
Logical Inhibit.................................................................................. 12
Power-Up Write Inhibit.................................................................... 12
Command Definitions . . . . . . . . . . . . . . . . . . . . . 13
Reading Array Data ................................................................13
Reset Command .....................................................................13
Autoselect Command Sequence ............................................13
Word/Byte Program Command Sequence .............................13
Figure 2. Program Operation.......................................................... 14
Chip Erase Command Sequence ...........................................14
Sector Erase Command Sequence ........................................14
Erase Suspend/Erase Resume Commands ...........................16
Figure 3. Erase Operation............................................................... 16
Table 5. Am29F400B Command Definitions................................... 17
Write Operation Status . . . . . . . . . . . . . . . . . . . . 18
DQ7: Data# Polling .................................................................18
Figure 4. Data# Polling Algorithm................................................... 18
RY/BY#: Ready/Busy# ...........................................................19
DQ6: Toggle Bit I ....................................................................19
DQ2: Toggle Bit II ...................................................................19
Reading Toggle Bits DQ6/DQ2 ..............................................19
DQ5: Exceeded Timing Limits ................................................20
DQ3: Sector Erase Timer .......................................................20
Figure 5. Toggle Bit Algorithm......................................................... 20
Table 6. Write Operation Status...................................................... 21
Absolute Maximum Ratings . . . . . . . . . . . . . . . . 22
Figure 6. Maximum Negative OvershootWaveform....................... 22
Figure 7. Maximum Positive OvershootWaveform........................ 22
Operating Ranges. . . . . . . . . . . . . . . . . . . . . . . . . 22
DC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . 23
TTL/NMOS Compatible ..........................................................23
CMOS Compatible ..................................................................24
Test Conditions. . . . . . . . . . . . . . . . . . . . . . . . . . . 25
Figure 8. Test Setup....................................................................... 25
Table 7. Test Specifications........................................................... 25
Key to Switching Waveforms. . . . . . . . . . . . . . . . 25
AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . 26
Read Operations ....................................................................26
Figure 9. Read Operations Timings............................................... 26
Hardware Reset (RESET#) ....................................................27
Figure 10. RESET# Timings.......................................................... 27
Word/Byte Configuration (BYTE#) ......................................28
Figure 11. BYTE# Timings for Read Operations............................ 28
Figure 12. BYTE# Timings for Write Operations............................ 28
Erase/Program Operations .....................................................29
Figure 13. Program Operation Timings.......................................... 30
Figure 14. Chip/Sector Erase Operation Timings.......................... 31
Figure 15. Data# Polling Timings (During Embedded Algorithms). 32
Figure 16. Toggle Bit Timings (During Embedded Algorithms)...... 32
Figure 17. DQ2 vs. DQ6................................................................. 33
Temporary Sector Unprotect ..................................................33
Figure 18. Temporary Sector Unprotect Timing Diagram.............. 33
Alternate CE# Controlled Erase/Program Operations ............34
Figure 19. Alternate CE# Controlled Write Operation Timings...... 35
Erase and Programming Performance . . . . . . . . 36
Latchup Characteristics. . . . . . . . . . . . . . . . . . . . 36
TSOP and SO Pin Capacitance . . . . . . . . . . . . . . 36
Data Retention. . . . . . . . . . . . . . . . . . . . . . . . . . . . 36
Physical Dimensions . . . . . . . . . . . . . . . . . . . . . . 37
TS 048—48-Pin Standard Thin Small Outline Package .........37
SO 044—44-Pin Small Outline Package ................................38
Revision Summary . . . . . . . . . . . . . . . . . . . . . . . . 39
Revision A (August 1997) .......................................................39
Revision B (October 1997) .....................................................39
Revision C (January 1998) .....................................................39
Revision C+1 (February 1998) ...............................................39
Revision C+2 (April 1998) .......................................................39
Revision C+3 (June 1998) ......................................................39
Revision C+4 (August 1998) ...................................................40
Revision D (January 1999) .....................................................40
Revision D+1 (July 2, 1999) ...................................................40
Revision E (November 15, 1999) ............................................40
Revision E+1 (November 30, 2000) .......................................40
Revision E+2 (June 4, 2004) ..................................................40
Revision E+3 (December 22, 2005) .......................................40
Revision E4 (May 18, 2006) ...................................................40
相关PDF资料 |
PDF描述 |
|---|---|
| AM29F400BT-90ED0 | 4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 5.0 Volt-only Boot Sector Flash Memory |
| AM29F400BT-90EE | 4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 5.0 Volt-only Boot Sector Flash Memory |
| AM29F400BT-90EE0 | 4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 5.0 Volt-only Boot Sector Flash Memory |
| AM29F400BT-90EF | 4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 5.0 Volt-only Boot Sector Flash Memory |
| AM29F400BT-90EF0 | 4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 5.0 Volt-only Boot Sector Flash Memory |
相关代理商/技术参数 |
参数描述 |
|---|---|
| AM29F400BT-90EF | 功能描述:闪存 4M (512KX8/256Kx16) Parallel NOR Fl 5V RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| AM29F400BT-90EI\T | 制造商:Advanced Micro Devices 功能描述:Flash Mem Parallel 5V 4M-Bit 512K x 8/256K x 16 90ns 48-Pin TSOP T/R |
| AM29F400BT-90SE\T | 制造商:Spansion 功能描述:4 MEGABIT (512 K X 8-BIT/256 K X 16-BIT) CMOS 5.0 VOLT-ONLY BOOT SECTOR FLASH MEMORY |
| AM29F400BT-90SF\\T | 制造商:Spansion 功能描述:NOR Flash Parallel 5V 4Mbit 512K/256K x 8bit/16bit 90ns 44-Pin SO T/R |
| AM29F400BT-90SF\T | 制造商:Spansion 功能描述:NOR Flash Parallel 5V 4Mbit 512K/256K x 8bit/16bit 90ns 44-Pin SO T/R |
发布紧急采购，3分钟左右您将得到回复。