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参数资料
| 型号： | AM29F400BT-90SK |
| 厂商： | Advanced Micro Devices, Inc. |
| 英文描述： | 4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 5.0 Volt-only Boot Sector Flash Memory |
| 中文描述： | 4兆位（512亩x 8-Bit/256亩x 16位），5.0伏的CMOS只引导扇区闪存 |
| 文件页数： | 24/43页 |
| 文件大小： | 548K |
| 代理商： | AM29F400BT-90SK |
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22
Am29F400B
21505E5 November1,2006
D A T A S H E E T
ABSOLUTE MAXIMUM RATINGS
Storage Temperature
Plastic Packages . . . . . . . . . . . . . . . –65
°
C to +150
°
C
Ambient Temperature
with Power Applied. . . . . . . . . . . . . . –55
°
C to +125
°
C
Voltage with Respect to Ground
V
CC
(Note 1) . . . . . . . . . . . . . . . .–2.0 V to +7.0 V
A9
,
OE#
,
and
RESET# (Note 2). . . . . . . . . . . .–2.0 V to +12.5 V
All other pins (Note 1) . . . . . . . . .–0.5 V to +7.0 V
Output Short Circuit Current (Note 3) . . . . . . 200 mA
Notes:
1. Minimum DC voltage on input or I/O pins is –0.5 V. During
voltage transitions, input or I/O pins may overshoot V
SS
to
–2.0 V for periods of up to 20 ns. See Figure 6. Maximum
DC voltage on input or I/O pins is
V
CC
+0.5 V. During
voltage transitions, input or I/O pins may overshoot to V
CC
+2.0 V for periods up to 20 ns. See Figure 7.
2. Minimum DC input voltage on pins A9, OE#, and RESET#
is –0.5 V. During voltage transitions, A9, OE#, and
RESET# may overshoot V
SS
to –2.0 V for periods of up to
20 ns. See Figure 6. Maximum DC input voltage on pin A9
is +12.5 V which may overshoot to +13.5 V for periods up
to 20 ns.
3. No more than one output may be shorted to ground at a
time. Duration of the short circuit should not be greater
than one second.
Note:
Stresses above those listed under “Absolute Maximum
Ratings” may cause permanent damage to the device. This is
a stress rating only; functional operation of the device at
these or any other conditions above those indicated in the
operational sections of this data sheet is not implied.
Exposure of the device to absolute maximum rating
conditions for extended periods may affect device reliability.
OPERATING RANGES
Commercial (C) Devices
Ambient Temperature (T
A
) . . . . . . . . . . . 0°C to +70°C
Industrial (I) Devices
Ambient Temperature (T
A
) . . . . . . . . . –40°C to +85°C
Extended (E) Devices
Ambient Temperature (T
A
) . . . . . . . . –55°C to +125°C
V
CC
Supply Voltages
V
CC
for ± 5% devices. . . . . . . . . . .+4.75 V to +5.25 V
V
CC
for ± 10% devices. . . . . . . . . . . .+4.5 V to +5.5 V
Note:
Operating ranges define those limits between which the
functionality of the device is guaranteed.
20 ns
20 ns
+0.8 V
–0.5 V
20 ns
–2.0 V
Figure 6.
Maximum Negative
Overshoot Waveform
20 ns
20 ns
V
CC
+2.0 V
V
CC
+0.5 V
20 ns
2.0 V
Figure 7.
Overshoot Waveform
Maximum Positive
相关PDF资料 |
PDF描述 |
|---|---|
| AM29F400BT-90SK0 | 4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 5.0 Volt-only Boot Sector Flash Memory |
| AM29F800B-120FE | 8 Megabit (1,048,576 x 8-Bit/524,288 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory |
| AM29F800B-120 | 8 Megabit (1,048,576 x 8-Bit/524,288 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory |
| AM29F800B-120EC | 8 Megabit (1,048,576 x 8-Bit/524,288 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory |
| AM29F800B-120ECB | 8 Megabit (1,048,576 x 8-Bit/524,288 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory |
相关代理商/技术参数 |
参数描述 |
|---|---|
| AM29F800BB-120DPC1 | 制造商:Spansion 功能描述:5V 8M FLASH KNOWN GOOD DIE W/BOTTOM BOOT (COMMERCIAL TEMP) - Gel-pak, waffle pack, wafer, diced wafer on film |
| AM29F800BB120SC | 制造商:Advanced Micro Devices 功能描述: |
| AM29F800BB-55EC | 制造商:Spansion 功能描述:NOR Flash Parallel 5V 8Mbit 1M/512K x 8bit/16bit 55ns 48-Pin TSOP |
| AM29F800BB-55EF | 功能描述:闪存 8M (1MX8/512KX16) Parallel NOR Fl 5V RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| AM29F800BB-55EF\\T | 制造商:Spansion 功能描述:IC 8MEG(512K16)BOTTOM SCTOR 100K (CS39S) |
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