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参数资料
| 型号： | AM29F800B-120ECB |
| 厂商： | Advanced Micro Devices, Inc. |
| 英文描述： | 8 Megabit (1,048,576 x 8-Bit/524,288 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory |
| 中文描述： | 8兆位（1,048,576 x 8-Bit/524，288 x 16位），5.0伏的CMOS只，扇区擦除闪存 |
| 文件页数： | 23/41页 |
| 文件大小： | 267K |
| 代理商： | AM29F800B-120ECB |
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8/18/97
Am29F800T/Am29F800B
23
P R E L I M I N A R Y
ABSOLUTE MAXIMUM RATINGS
Storage Temperature
Plastic Packages . . . . . . . . . . . . . . . –65
°
C to +125
°
C
Ambient Temperature
with Power Applied . . . . . . . . . . . . . –55
°
C to +125
°
C
Voltage with Respect to Ground
All pins except A9 (Note 1) . . . . . . . .–2.0 V to +7.0 V
V
CC
(Note 1). . . . . . . . . . . . . . . . . . . .–2.0 V to +7.0 V
A9 (Note 2). . . . . . . . . . . . . . . . . . . .–2.0 V to +13.0 V
Output Short Circuit Current (Note 3) . . . . . . 200 mA
Notes:
1. Minimum DC voltage on input or I/O pins is –0.5 V. During
voltage transitions, inputs may overshoot V
SS
to –2.0 V
for periods of up to 20 ns. Maximum DC voltage on input
and I/O pins is V
CC
+ 0.5 V. During voltage transitions,
input and I/O pins may overshoot to V
CC
+ 2.0 V for
periods up to 20ns.
2. Minimum DC input voltage on A9 pin is –0.5 V. During
voltage transitions, A9 may overshoot V
SS
to –2.0 V for
periods of up to 20 ns. Maximum DC input voltage on A9
is +12.5 V which may overshoot to 14.0 V for periods up
to 20 ns.
3. No more than one output shorted to ground at a time. Du-
ration of the short circuit should not be greater than one
second.
Stresses above those listed under “Absolute Maximum Rat-
ings” may cause permanent damage to the device. This is a
stress rating only; functional operation of the device at these
or any other conditions above those indicated in the opera-
tional sections of this specification is not implied. Exposure of
the device to absolute maximum rating conditions for ex-
tended periods may affect device reliability.
OPERATING RANGES
Commercial (C) Devices
Ambient Temperature (T
A
) . . . . . . . . . . .0
°
C to +70
°
C
Industrial (I) Devices
Ambient Temperature (T
A
) . . . . . . . . .–40
°
C to +85
°
C
Extended (E) Devices
Ambient Temperature (T
A
) . . . . . . . .–55
°
C to +125
°
C
V
CC
Supply Voltages
V
CC
for Am29F800T/B-70, 90,
120, 150 . . . . . . . . . . . . . . . . . . . . +4.50 V to +5.50 V
Operating ranges define those limits between which the func-
tionality of the device is guaranteed.
相关PDF资料 |
PDF描述 |
|---|---|
| AM29F800B-70FCB | 8 Megabit (1,048,576 x 8-Bit/524,288 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory |
| AM29F800B-70FE | 8 Megabit (1,048,576 x 8-Bit/524,288 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory |
| AM29F800B-70FEB | 8 Megabit (1,048,576 x 8-Bit/524,288 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory |
| AM29F800B-70FI | 8 Megabit (1,048,576 x 8-Bit/524,288 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory |
| AM29F800B-70FIB | 8 Megabit (1,048,576 x 8-Bit/524,288 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory |
相关代理商/技术参数 |
参数描述 |
|---|---|
| AM29F800BB-120DPC1 | 制造商:Spansion 功能描述:5V 8M FLASH KNOWN GOOD DIE W/BOTTOM BOOT (COMMERCIAL TEMP) - Gel-pak, waffle pack, wafer, diced wafer on film |
| AM29F800BB120SC | 制造商:Advanced Micro Devices 功能描述: |
| AM29F800BB-55EC | 制造商:Spansion 功能描述:NOR Flash Parallel 5V 8Mbit 1M/512K x 8bit/16bit 55ns 48-Pin TSOP |
| AM29F800BB-55EF | 功能描述:闪存 8M (1MX8/512KX16) Parallel NOR Fl 5V RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| AM29F800BB-55EF\\T | 制造商:Spansion 功能描述:IC 8MEG(512K16)BOTTOM SCTOR 100K (CS39S) |
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