参数资料
型号: AM29F800B-70FI
厂商: ADVANCED MICRO DEVICES INC
元件分类: PROM
英文描述: 8 Megabit (1,048,576 x 8-Bit/524,288 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory
中文描述: 512K X 16 FLASH 5V PROM, 70 ns, PDSO48
封装: REVERSE, TSOP-48
文件页数: 9/41页
文件大小: 267K
代理商: AM29F800B-70FI
8/18/97
Am29F800T/Am29F800B
9
P R E L I M I N A R Y
In the standby mode the outputs are in the high imped-
ance state, independent of the OE input.
Output Disable
With the OE input at a logic high level (V
IH
), output from
the device is disabled. This will cause the output pins
to be in a high impedance state.
Autoselect
The autoselect mode allows the reading of a binary
code from the device and will identify its manufacturer
and type. This mode is intended for use by program-
ming equipment for the purpose of automatically
matching the device to be programmed with its corre-
sponding programming algorithm. This mode is func-
tional over the entire temperature range of the device.
To activate this mode, the programming equipment
must force V
ID
(11.5 V to 12.5 V) on address pin A9.
Two identifier bytes may then be sequenced from the
device outputs by toggling address A0 from V
IL
to V
IH
.
All addresses are don’t cares except A0, A1, and A6
(see Table 3).
The manufacturer and device codes may also be read
via the command register, for instances when the
Am29F800 is erased or programmed in a system with-
out access to high voltage on the A9 pin. The command
sequence is illustrated in Table 4 (see Autoselect Com-
mand Sequence).
Byte 0 (A0 = V
IL
) represents the manufacturer’s code
(AMD=01H) and byte 1 (A0 = V
IH
) the device identifier
code (Am29F800T = D6H and Am29F800B = 58H for
x8 mode; Am29F800T = 22D6H and Am29F800B =
2258H for x16 mode). These two bytes/words are
given in the table below. All identifiers for manufacturer
and device will exhibit odd parity with DQ7 defined as
the parity bit. In order to read the proper device codes
when executing the Autoselect, A1 must be V
IL
(see
Tables 3 and 4).
The autoselect mode also facilitates the determination
of sector protection in the system. By performing a read
operation at the address location XX02H with the
higher order address bits A12–A18 set to the desired
sector address, the device will return 01H for a pro-
tected sector and 00H for a non-protected sector.
Table 3.
Am29F800 Sector Protection Verify Autoselect Codes
*Outputs 01H at protected sector addresses
Table 4.
Expanded Autoselect Code Table
(B) – Byte mode
(W) – Word mode
Type
A12–A18
A6
A1
A0
Code (HEX)
Manufacturer Code—AMD
X
V
IL
V
IL
V
IL
01H
Am29F800 Device
Am29F800T
Byte
X
V
IL
V
IL
V
IH
D6H
Word
22D6H
Am29F800B
Byte
X
V
IL
V
IL
V
IH
58H
Word
2258H
Sector Protection
Sector
Address
V
IL
V
IH
V
IL
01H*
Type
Code
DQ
15
DQ
14
DQ
13
DQ
12
DQ
11
DQ
10
DQ
9
DQ
8
DQ
7
DQ
6
DQ
5
DQ
4
DQ
3
DQ
2
DQ
1
DQ
0
Manufacturer Code—AMD
01H
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
1
Am29F800
Device
Am29F800T(B)
(W)
D6H
22D6H
A-1
0
HI-Z
0
HI-Z
1
HI-Z
0
HI-Z
0
HI-Z
0
HI-Z
1
HI-Z
0
1
1
1
1
0
0
1
1
0
0
1
1
1
1
0
0
Am29F800B(B)
(W)
58H
2258H
A-1
0
HI-Z
0
HI-Z
1
HI-Z
0
HI-Z
0
HI-Z
0
HI-Z
1
HI-Z
0
0
0
1
1
0
0
1
1
1
1
0
0
0
0
0
0
Sector Protection
01H
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
1
相关PDF资料
PDF描述
AM29F800B-70FIB 8 Megabit (1,048,576 x 8-Bit/524,288 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory
AM29F800B-70SC 8 Megabit (1,048,576 x 8-Bit/524,288 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory
AM29F800B-70SCB 8 Megabit (1,048,576 x 8-Bit/524,288 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory
AM29F800B-70SE 8 Megabit (1,048,576 x 8-Bit/524,288 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory
AM29F800B-70SEB 8 Megabit (1,048,576 x 8-Bit/524,288 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory
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