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参数资料
| 型号： | Am29F800BB-120DWE |
| 厂商： | Advanced Micro Devices, Inc. |
| 英文描述： | Dual Retriggerable Monostable Multivibrators 16-TSSOP -40 to 85 |
| 中文描述： | 8兆位（1 M中的x 8-Bit/512亩x 16位），5.0伏的CMOS只，引导扇区快闪记忆体模修订1 |
| 文件页数： | 9/9页 |
| 文件大小： | 207K |
| 代理商： | AM29F800BB-120DWE |
5/4/98
Am29F800B Known Good Die
9
SU PP L E ME NT
REVISION SUMMARY FOR AM29F800B KGD
Revision A+1, A+2
Distinctive Characteristics
Changed typical program/erase time to 30 mA to match
the CMOS DC Characteristics table in the Am29F400B
full data sheet.
The minimum guarante per sector is now 1 million
cycles.
Pad Description
Corrected the following dimensions:
X (mils): pads 15, 18, 36
Y (mils): pads 10–12, 35, 36
X (mm): pads 2–22, 37, 38
Y (mm): pads 10–12, 23–32, 35, 36
Physical Specifications
Changed die thickness specification to ~20 mils.
Trademarks
Copyright 1998 Advanced Micro Devices, Inc. All rights reserved.
AMD, the AMD logo, and combinations thereof are registered trademarks of Advanced Micro Devices, Inc.
Product names used in this publication are for identification purposes only and may be trademarks of their respective companies.
相关PDF资料 |
PDF描述 |
|---|---|
| Am29F800BB-120DWI | Dual Retriggerable Monostable Multivibrators 16-TSSOP -40 to 85 |
| AM29F800BB-120DWE1 | Dual Retriggerable Monostable Multivibrators 16-TSSOP -40 to 85 |
| Am29F800BB-120ECB | Dual Retriggerable Monostable Multivibrators 16-VQFN -40 to 85 |
| AM29F800BB-120EC | Flash Memory IC; Access Time, Tacc:120ns; Memory Configuration:512K x 16 / 1M x 8; Memory Size:8Mbit; Supply Voltage Max:5.5V; Mounting Type:Surface Mount |
| AM29F800BB-120EF | Flash Memory IC; Leaded Process Compatible:Yes; Memory Size:8Mbit; Package/Case:48-TSOP; Peak Reflow Compatible (260 C):Yes; Supply Voltage Max:5V; Access Time, Tacc:120ns; Series:AM29 RoHS Compliant: Yes |
相关代理商/技术参数 |
参数描述 |
|---|---|
| AM29F800BB120SC | 制造商:Advanced Micro Devices 功能描述: |
| AM29F800BB-55EC | 制造商:Spansion 功能描述:NOR Flash Parallel 5V 8Mbit 1M/512K x 8bit/16bit 55ns 48-Pin TSOP |
| AM29F800BB-55EF | 功能描述:闪存 8M (1MX8/512KX16) Parallel NOR Fl 5V RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| AM29F800BB-55EF\\T | 制造商:Spansion 功能描述:IC 8MEG(512K16)BOTTOM SCTOR 100K (CS39S) |
| AM29F800BB-55EF\T | 功能描述:闪存 8M (1MX8/512KX16) Parallel NOR Fl 5V RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
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