参数资料
型号: AM29LV001BT-55EEB
厂商: ADVANCED MICRO DEVICES INC
元件分类: PROM
英文描述: 1 Megabit (128 K x 8-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
中文描述: 128K X 8 FLASH 3V PROM, 55 ns, PDSO32
封装: TSOP-32
文件页数: 13/38页
文件大小: 221K
代理商: AM29LV001BT-55EEB
13
Am29LV001B
P R E L IM IN A R Y
Reset Command
Writing the reset command to the device resets the de-
vice to reading array data. Address bits are don’t care
for this command.
The reset command may be written between the se-
quence cycles in an erase command sequence before
erasing begins. This resets the device to reading array
data. Once erasure begins, however, the device ig-
nores reset commands until the operation is complete.
The reset command may be written between the se-
quence cycles in a program command sequence be-
fore programming begins. This resets the device to
reading array data (also applies to programming in
Erase Suspend mode). Once programming begins,
however, the device ignores reset commands until the
operation is complete.
The reset command may be written between the se-
quence cycles in an autoselect command sequence.
Once in the autoselect mode, the reset command
must
be written to return to reading array data (also applies
to autoselect during Erase Suspend).
If DQ5 goes high during a program or erase operation,
writing the reset command returns the device to read-
ing array data (also applies during Erase Suspend).
See “AC Characteristics” for parameters, and to Figure
14 for the timing diagram.
Autoselect Command Sequence
The autoselect command sequence allows the host
system to access the manufacturer and devices codes,
and determine whether or not a sector is protected.
Table 5 shows the address and data requirements. This
method is an alternative to that shown in Table 4, which
is intended for PROM programmers and requires V
ID
on address bit A9.
The autoselect command sequence is initiated by writ-
ing two unlock cycles, followed by the autoselect com-
mand. The device then enters the autoselect mode,
and the system may read at any address any number
of times, without initiating another command sequence.
A read cycle at address XX00h retrieves the manufac-
turer code. A read cycle at address XX01h returns the
device code. A read cycle containing a sector address
(SA) and the address 02h returns 01h if that sector is
protected, or 00h if it is unprotected. Refer to Table 2 for
valid sector addresses.
The system must write the reset command to exit the
autoselect mode and return to reading array data.
Byte Program Command Sequence
The device programs one byte of data for each program
operation. The command sequence requires four bus
cycles, and is initiated by writing two unlock write cy-
cles, followed by the program set-up command. The
program address and data are written next, which in
turn initiate the Embedded Program algorithm. The
system is
not
required to provide further controls or tim-
ings. The device automatically provides internally gen-
erated program pulses and verify the programmed cell
margin. Table 5 shows the address and data require-
ments for the byte program command sequence.
When the Embedded Program algorithm is complete,
the device then returns to reading array data and ad-
dresses are no longer latched. The system can deter-
mine the status of the program operation by using DQ7
or DQ6. See “Write Operation Status” for information
on these status bits.
Any commands written to the device during the Em-
bedded Program Algorithm are ignored. Note that a
hardware reset
immediately terminates the program-
ming operation. The Byte Program command se-
quence should be reinitiated once the device has
reset to reading array data, to ensure data integrity.
Programming is allowed in any sequence and across
sector boundaries.
A bit cannot be programmed
from a “0” back to a “1”.
Attempting to do so may halt
the operation and set DQ5 to “1,” or cause the Data#
Polling algorithm to indicate the operation was suc-
cessful. However, a succeeding read will show that the
data is still “0”. Only erase operations can convert a “0”
to a “1”.
Unlock Bypass Command Sequence
The unlock bypass feature allows the system to pro-
gram bytes to the device faster than using the standard
program command sequence. The unlock bypass com-
mand sequence is initiated by first writing two unlock
cycles. This is followed by a third write cycle containing
the unlock bypass command, 20h. The device then en-
ters the unlock bypass mode. A two-cycle unlock by-
pass program command sequence is all that is required
to program in this mode. The first cycle in this se-
quence contains the unlock bypass program com-
mand, A0h; the second cycle contains the program
address and data. Additional data is programmed in
the same manner. This mode dispenses with the initial
two unlock cycles required in the standard program
command sequence, resulting in faster total program-
ming time. Table 5 shows the requirements for the com-
mand sequence.
During the unlock bypass mode, only the Unlock By-
pass Program and Unlock Bypass Reset commands
are valid. To exit the unlock bypass mode, the system
must issue the two-cycle unlock bypass reset com-
mand sequence. The first cycle must contain the data
90h; the second cycle the data 00h. Addresses are
don’t cares for both cycles. The device then returns to
reading array data.
Figure 3 illustrates the algorithm for the program oper-
ation. See the Erase/Program Operations table in “AC
相关PDF资料
PDF描述
AM29LV001BT-55EI 1 Megabit (128 K x 8-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
Am29LV001BT-70JE 1 Megabit (128 K x 8-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
AM29LV001BT-70JEB 1 Megabit (128 K x 8-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
Am29LV001BT-70JI 1 Megabit (128 K x 8-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
AM29LV001BT-70JIB 1 Megabit (128 K x 8-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
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