- 您现在的位置：买卖IC网 > PDF目录366453 > AM29LV004B-1 (Advanced Micro Devices, Inc.) 4 Megabit (512 K x 8-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory PDF资料下载
参数资料
| 型号： | AM29LV004B-1 |
| 厂商： | Advanced Micro Devices, Inc. |
| 英文描述： | 4 Megabit (512 K x 8-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory |
| 中文描述： | 4兆位（512亩× 8位）的CMOS 3.0伏，只引导扇区闪存 |
| 文件页数： | 40/40页 |
| 文件大小： | 769K |
| 代理商： | AM29LV004B-1 |
第1页第2页第3页第4页第5页第6页第7页第8页第9页第10页第11页第12页第13页第14页第15页第16页第17页第18页第19页第20页第21页第22页第23页第24页第25页第26页第27页第28页第29页第30页第31页第32页第33页第34页第35页第36页第37页第38页第39页当前第40页
Am29LV004B
39
REVISION SUMMARY
Revision A (January 1998)
Initial release.
Revision B (June 1998)
Expanded data sheet from Advanced Information to
Preliminary version.
Distinctive Characteristics
Changed
“Manufactured on 0.35 μm process technology”
to “Manufactured on 0.32 μm process technology”.
General Description
Second paragraph:
Changed “This device is manufac-
tured using AMD’s 0.35 μm process technology” to
“This device is manufactured using AMD’s 0.32 μm
process technology”.
Revision C (January 1999)
Global
Removed the -80 speed option.
Distinctive Characteristics
Added bullet for 20-year data retention at 125
°
C.
DC Characteristics—CMOS Compatible
I
CC1
, I
CC2
, I
CC3
, I
CC4
, I
CC5
: Added Note 2 “Maximum
I
CC
specifications are tested with V
CC
= V
CCmax
”.
Revision D (November 18, 1999)
AC Characteristics—Figure 15. Program
Operations Timing and Figure 16. Chip/Sector
Erase Operations
Deleted t
GHWL
and changed OE# waveform to start at
high.
Physical Dimensions
Replaced figures with more detailed illustrations.
Revision D+1 (November 13, 2000)
Global
Added table of contents. Deleted burn-in option from
Ordering Information section.
Trademarks
Copyright 2000 Advanced Micro Devices, Inc. All rights reserved.
AMD, the AMD logo, and combinations thereof are registered trademarks of Advanced Micro Devices, Inc.
ExpressFlash is a trademark of Advanced Micro Devices, Inc.
Product names used in this publication are for identification purposes only and may be trademarks of their respective companies.
相关PDF资料 |
PDF描述 |
|---|---|
| AM29LV004BT-120FE | SWITCH KEYLOCK SPDT 1A 90DEG |
| AM29LV004BT-120FI | SWITCH KEYLOCK SP3T 4A 45DEG |
| AM29LV004BB-70EC | Ceramic Conformally Coated / Radial 'Standard & High Voltage Golden Max'; Capacitance [nom]: 180pF; Working Voltage (Vdc)[max]: 500V; Capacitance Tolerance: +/-10%; Dielectric: Multilayer Ceramic, Conformally Coated; Temperature Coefficient: X7R; Lead Style: Radial Leaded; Lead Dimensions: 0.100" Lead Spacing; Body Dimensions: 0.150" x 0.210" x 0.130"; Container: Bag; Qty per Container: 500 |
| Am29LV004BT-70EE | Ceramic Conformally Coated / Radial 'Standard & High Voltage Golden Max'; Capacitance [nom]: 200pF; Working Voltage (Vdc)[max]: 100V; Capacitance Tolerance: +/-5%; Dielectric: Multilayer Ceramic, Conformally Coated; Temperature Coefficient: C0G (NP0); Lead Style: Radial Leaded; Lead Dimensions: 0.100" Lead Spacing; Body Dimensions: 0.150" x 0.210" x 0.130"; Container: Bag; Qty per Container: 500 |
| AM29LV004BB-120EC | 4 Megabit (512 K x 8-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory |
相关代理商/技术参数 |
参数描述 |
|---|---|
| AM29LV004BB-120EC | 制造商:Advanced Micro Devices 功能描述:NOR Flash, 512K x 8, 40 Pin, Plastic, TSSOP |
| AM29LV004BB-120EI | 制造商:Rochester Electronics LLC 功能描述: 制造商:Advanced Micro Devices 功能描述:NOR Flash, 512K x 8, 40 Pin, Plastic, TSSOP |
| AM29LV004BB120EI\T | 制造商:Advanced Micro Devices 功能描述:4 Mb (512K x 8) Boot Sector, Flash Memory |
| AM29LV004BB-120EIT | 制造商:Rochester Electronics LLC 功能描述: 制造商:Advanced Micro Devices 功能描述: |
| am29lv004bt-120ed | 制造商:Advanced Micro Devices 功能描述: |
发布紧急采购，3分钟左右您将得到回复。