- 您现在的位置：买卖IC网 > PDF目录366453 > Am29LV004BB-70REIB (Advanced Micro Devices, Inc.) 4 Megabit (512 K x 8-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory PDF资料下载
参数资料
| 型号： | Am29LV004BB-70REIB |
| 厂商： | Advanced Micro Devices, Inc. |
| 英文描述： | 4 Megabit (512 K x 8-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory |
| 中文描述： | 4兆位（512亩× 8位）的CMOS 3.0伏，只引导扇区闪存 |
| 文件页数： | 2/6页 |
| 文件大小： | 39K |
| 代理商： | AM29LV004BB-70REIB |
2
Am29LV004B
A D V A N C E I N F O R M A T I O N
GENERAL DESCRIPTION
The Am29LV004B is an 4 Mbit, 3.0 volt-only Flash
memory organized as 524,288 bytes. The device is
offered in a 40-pin TSOP package. The byte-wide (x8)
data appears on DQ7–DQ0. This device requires only
a single, 3.0 volt V
CC
supply to perform read, program,
and erase operations. A standard EPROM pro-
grammer can also be used to program and erase the
device.
This device is manufactured using AMD’s 0.35
μ
m
process technology, and offers all the features and ben-
efits of the Am29LV004, which was manufactured using
0.5
μ
m process technology. In addition, the
Am29LV004B features unlock bypass programming
and in-system sector protection/unprotection.
The standard device offers access times of 70, 80, 90,
and 120 ns, allowing high speed microprocessors to
operate without wait states. To eliminate bus contention
the device has separate chip enable (CE#), write
enable (WE#) and output enable (OE#) controls.
The device requires only a
single 3.0 volt power sup-
ply
for both read and write functions. Internally gener-
ated and regulated voltages are provided for the
program and erase operations.
The device is entirely command set compatible with the
JEDEC single-power-supply Flash standard
. Com-
mands are written to the command register using stan-
dard microprocessor write timings. Register contents
serve as input to an internal state-machine that con-
trols the erase and programming circuitry. Write cycles
also internally latch addresses and data needed for the
programming and erase operations. Reading data out
of the device is similar to reading from other Flash or
EPROM devices.
Device programming occurs by executing the program
command sequence. This initiates the
Embedded
Program
algorithm—an internal algorithm that auto-
matically times the program pulse widths and verifies
proper cell margin. The
Unlock Bypass
mode facili-
tates faster programming times by requiring only two
write cycles to program data instead of four.
Device erasure occurs by executing the erase command
sequence. This initiates the
Embedded Erase
algo-
rithm—an internal algorithm that automatically prepro-
grams the array (if it is not already programmed) before
executing the erase operation. During erase, the device
automatically times the erase pulse widths and verifies
proper cell margin.
The host system can detect whether a program or
erase operation is complete by observing the RY/BY#
pin, or by reading the DQ7 (Data# Polling) and DQ6
(toggle)
status bits
. After a program or erase cycle has
been completed, the device is ready to read array data
or accept another command.
The
sector erase architecture
allows memory sectors
to be erased and reprogrammed without affecting the
data contents of other sectors. The device is fully
erased when shipped from the factory.
Hardware data protection
measures include a low
V
CC
detector that automatically inhibits write opera-
tions during power transitions. The
hardware sector
protection
feature disables both program and erase
operations in any combination of the sectors of mem-
ory. This can be achieved in-system or via program-
ming equipment.
The
Erase Suspend
feature enables the user to put
erase on hold for any period of time to read data from,
or program data to, any sector that is not selected for
erasure. True background erase can thus be achieved.
The
hardware RESET# pin
terminates any operation
in progress and resets the internal state machine to
reading array data. The RESET# pin may be tied to the
system reset circuitry. A system reset would thus also
reset the device, enabling the system microprocessor
to read the boot-up firmware from the Flash memory.
The device offers two power-saving features. When ad-
dresses have been stable for a specified amount of
time, the device enters the
automatic sleep mode
.
The system can also place the device into the
standby
mode
. Power consumption is greatly reduced in both
these modes.
AMD’s Flash technology combines years of Flash
memory manufacturing experience to produce the
highest levels of quality, reliability and cost effective-
ness. The device electrically erases all bits within
a sector simultaneously via Fowler-Nordheim tun-
neling. The data is programmed using hot electron
injection.
相关PDF资料 |
PDF描述 |
|---|---|
| Am29LV004BT-70REEB | 4 Megabit (512 K x 8-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory |
| Am29LV004BB-70REEB | 4 Megabit (512 K x 8-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory |
| AM29LV004BT-70EC | RP Series - Econoline Unregulated DC-DC Converters; Input Voltage (Vdc): 12V; Output Voltage (Vdc): 3.3V; Power: 1W; Pot-Core Transformer - separated windings; High 5.2kVDC Isolation in compact size; Optional Continuous Short Circuit Protected; Pin Compatible with RH & RK Series; Approved for Medical Applications; UL and EN Safety Approvals; Efficiency to 82% |
| AM29LV004B-1 | 4 Megabit (512 K x 8-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory |
| AM29LV004BT-120FE | SWITCH KEYLOCK SPDT 1A 90DEG |
相关代理商/技术参数 |
参数描述 |
|---|---|
| am29lv004bt-120ed | 制造商:Advanced Micro Devices 功能描述: |
| AM29LV004BT-90EI | 制造商:Advanced Micro Devices 功能描述: |
| AM29LV008BB-120ECT | 制造商:Spansion 功能描述:IC 8MEG X8, 3 V FLASH BOTTOM B |
| AM29LV008BB-120ED | 制造商:Spansion 功能描述:IC SM FLASH 3V 8MB |
| AM29LV008BB-120ED | 制造商:Spansion 功能描述:FLASH MEMORY IC |
发布紧急采购，3分钟左右您将得到回复。