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参数资料
| 型号： | AM29LV004BT-120FC |
| 厂商： | ADVANCED MICRO DEVICES INC |
| 元件分类： | PROM |
| 英文描述： | 4 Megabit (512 K x 8-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory |
| 中文描述： | 512K X 8 FLASH 3V PROM, 120 ns, PDSO40 |
| 封装： | REVERSE, MO-142CD, TSOP-40 |
| 文件页数： | 37/40页 |
| 文件大小： | 769K |
| 代理商： | AM29LV004BT-120FC |
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36
Am29LV004B
ERASE AND PROGRAMMING PERFORMANCE
Notes:
1. Typical program and erase times assume the following conditions: 25
°
C, 3.0 V V
CC
, 1,000,000 cycles. Additionally,
programming typicals assume checkerboard pattern.
2.
Under worst case conditions of 90°C, V
CC
= 2.7 V, 1,000,000 cycles.
3. The typical chip programming time is considerably less than the maximum chip programming time listed, since most bytes
program faster than the maximum program times listed.
4. In the pre-programming step of the Embedded Erase algorithm, all bytes are programmed to 00h before erasure.
5. System-level overhead is the time required to execute the two- or four-bus-cycle sequence for the program command. See
Table 5 for further information on command definitions.
6. The device has a minimum guaranteed erase and program cycle endurance of 1,000,000 cycles.
LATCHUP CHARACTERISTICS
Includes all pins except V
CC
. Test conditions: V
CC
= 3.0 V one pin at a time.
TSOP AND SO PIN CAPACITANCE
Notes:
1. Sampled, not 100% tested.
2. Test conditions T
A
= 25°C, f = 1.0 MHz.
DATA RETENTION
Parameter
Typ (Note 1)
Max (Note 2)
Unit
Comments
Sector Erase Time
0.7
15
s
Excludes 00h programming
prior to erasure (Note 4)
Chip Erase Time
7
s
Byte Programming Time
9
300
μs
Excludes system level
overhead (Note 5)
Chip Programming Time
(Note 3)
4.5
13.5
s
Description
Min
Max
Input voltage with respect to V
SS
on all pins except I/O pins
(including A9, OE#, and RESET#)
–1.0 V
12.5 V
Input voltage with respect to V
SS
on all I/O pins
–1.0 V
V
CC
+ 1.0 V
V
CC
Current
–100 mA
+100 mA
Parameter
Symbol
Parameter Description
Test Setup
Typ
Max
Unit
C
IN
Input Capacitance
V
IN
= 0
6
7.5
pF
C
OUT
Output Capacitance
V
OUT
= 0
8.5
12
pF
C
IN2
Control Pin Capacitance
V
IN
= 0
7.5
9
pF
Parameter
Test Conditions
Min
Unit
Minimum Pattern Data Retention Time
150
°
C
10
Years
125
°
C
20
Years
相关PDF资料 |
PDF描述 |
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| AM29LV004B-100EC | 4 Megabit (512 K x 8-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory |
| Am29LV004B-100ECB | Circular Connector; MIL SPEC:MIL-C-26482, Series I, Solder; Body Material:Aluminum; Series:PT02; Number of Contacts:23; Connector Shell Size:16; Connecting Termination:Solder; Circular Shell Style:Box Mount Receptacle |
| AM29LV004B-100EE | Circular Connector; Body Material:Aluminum; Series:PT02; No. of Contacts:23; Connector Shell Size:16; Connecting Termination:Solder; Circular Shell Style:Box Mount Receptacle; Circular Contact Gender:Socket; Insert Arrangement:16-23 |
| AM29LV004B-100EEB | PT02A SERIES (MS3112) GENERAL DUTY BOX MOUNT RECEPTACLES, STRAIGHT BODY STYLE, SOLDER TERMINATION, 16 SHELL SIZE, 16-26 INSERT ARRANGEMENT, RECEPTACLE GENDER, 26 CONTACTS |
相关代理商/技术参数 |
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|---|---|
| AM29LV004BT-90EI | 制造商:Advanced Micro Devices 功能描述: |
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