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| 型号： | AM29LV065DU101RWHE |
| 厂商： | Advanced Micro Devices, Inc. |
| 英文描述： | 64 Megabit (8 M x 8-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory with VersatileIOTM Control |
| 中文描述： | 64兆位（8米× 8位）的CMOS 3.0伏特，只有统一部门闪光控制记忆与VersatileIOTM |
| 文件页数： | 24/52页 |
| 文件大小： | 1184K |
| 代理商： | AM29LV065DU101RWHE |
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January 10, 2002
Am29LV065D
23
See also
“
VersatileIO
TM
(V
IO
) Control
”
in the Device
Bus Operations section for more information. The
Read-Only Operations table provides the read param-
eters, and
Figure 13
shows the timing diagram.
Reset Command
Writing the reset command resets the device to the
read or erase-suspend-read mode. Address bits are
don
’
t cares for this command.
The reset command may be written between the se-
quence cycles in an erase command sequence before
erasing begins. This resets the device to the read
mode. Once erasure begins, however, the device ig-
nores reset commands until the operation is complete.
The reset command may be written between the
sequence cycles in a program command sequence
before programming begins. This resets the device to
the read mode. If the program command sequence is
written while the device is in the Erase Suspend mode,
writing the reset command returns the device to the
erase-suspend-read mode. Once programming be-
gins, however, the device ignores reset commands
until the operation is complete.
The reset command may be written between the se-
quence cycles in an autoselect command sequence.
Once in the autoselect mode, the reset command
must be written to return to the read mode. If the de-
vice entered the autoselect mode while in the Erase
Suspend mode, writing the reset command returns the
device to the erase-suspend-read mode.
If DQ5 goes high during a program or erase operation,
writing the reset command returns the device to the
read mode (or erase-suspend-read mode if the device
was in Erase Suspend).
Autoselect Command Sequence
The autoselect command sequence allows the host
system to read several identifier codes at specific ad-
dresses:
Table 10
shows the address and data requirements.
The command sequence is an alternative to the high
voltage method shown in
Table 3
. The autoselect com-
mand sequence may be written to an address that is
either in the read or erase-suspend-read mode. The
autoselect command may not be written while the de-
vice is actively programming or erasing.
The autoselect command sequence is initiated by first
writing two unlock cycles. This is followed by a third
write cycle that contains the autoselect command. The
device then enters the autoselect mode. The system
may read at any address any number of times without
initiating another autoselect command sequence.
The system must write the reset command to return to
the read mode (or erase-suspend-read mode if the de-
vice was previously in Erase Suspend).
Enter SecSi Sector/Exit SecSi Sector
Command Sequence
The SecSi Sector region provides a secured data area
containing an 16-byte random Electronic Serial Num-
ber (ESN). The system can access the SecSi Sector
region by issuing the three-cycle Enter SecSi Sector
command sequence. The device continues to access
the SecSi Sector region until the system issues the
four-cycle Exit SecSi Sector command sequence. The
Exit SecSi Sector command sequence returns the de-
vice to normal operation.
Table 10
shows the address
and data requirements for both command sequences.
See also
“
SecSi (Secured Silicon) Sector Flash
Memory Region
”
for further information.
Byte Program Command Sequence
Programming is a four-bus-cycle operation. The pro-
gram command sequence is initiated by writing two
unlock write cycles, followed by the program set-up
command. The program address and data are written
next, which in turn initiate the Embedded Program al-
gorithm. The system is
not
required to provide further
controls or timings. The device automatically provides
internally generated program pulses and verifies the
programmed cell margin.
Table 10
shows the address
and data requirements for the byte program command
sequence.
When the Embedded Program algorithm is complete,
the device then returns to the read mode and ad-
dresses are no longer latched. The system can deter-
mine the status of the program operation by using
DQ7, DQ6, or RY/BY#. Refer to the Write Operation
Status section for information on these status bits.
Any commands written to the device during the Em-
bedded Program Algorithm are ignored.
Note that a
hardware reset
immediately terminates the program
operation. The program command sequence should
be reinitiated once the device has returned to the read
mode, to ensure data integrity.
Programming is allowed in any sequence and across
sector boundaries.
A bit cannot be programmed
from
“
0
”
back to a
“
1.
”
Attempting to do so may
cause the device to set DQ5 = 1, or cause the DQ7
and DQ6 status bits to indicate the operation was suc-
cessful. However, a succeeding read will show that the
data is still
“
0.
”
Only erase operations can convert a
“
0
”
to a
“
1.
”
Identifier Code
Manufacturer ID
Device ID
SecSi Sector Factory Protect
Sector Group Protect Verify
Address
00h
01h
03h
(SA)02h
相关PDF资料 |
PDF描述 |
|---|---|
| AM29LV065DU90RWHIN | 64 Megabit (8 M x 8-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory with VersatileIOTM Control |
| AM29LV065DU101RWHIN | 64 Megabit (8 M x 8-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory with VersatileIOTM Control |
| AM29LV065DU120RWHIN | 64 Megabit (8 M x 8-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory with VersatileIOTM Control |
| AM29LV065DU90RWHEN | 64 Megabit (8 M x 8-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory with VersatileIOTM Control |
| AM29LV065DU101RWHEN | 64 Megabit (8 M x 8-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory with VersatileIOTM Control |
相关代理商/技术参数 |
参数描述 |
|---|---|
| AM29LV065DU120REF | 制造商:Spansion 功能描述:NOR Flash Parallel 3V/3.3V 64Mbit 8M x 8bit 120ns 48-Pin TSOP 制造商:Spansion 功能描述:SPZAM29LV065DU120REF MEM FLASH EOL160610 制造商:Spansion 功能描述:Flash Memory IC |
| AM29LV065DU120REI | 制造商:Spansion 功能描述:IC, FLASH MEM, 64MBIT, 120NS, 48-TSOP, Memory Type:Flash, Memory Size:64Mbit, Me |
| AM29LV065DU120RWHI | 制造商:Spansion 功能描述:NOR Flash Parallel 3V/3.3V 64Mbit 8M x 8bit 120ns 63-Pin FBGA |
| AM29LV065DU90REF | 制造商:Spansion 功能描述:NOR Flash Parallel 3V/3.3V 64Mbit 8M x 8bit 90ns 48-Pin TSOP 制造商:Spansion 功能描述:IC SM FLASH 3V 64MB |
| AM29LV065DU90REF | 制造商:Spansion 功能描述:FLASH MEMORY IC |
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