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参数资料
| 型号： | AM29LV065DU121REE |
| 厂商： | ADVANCED MICRO DEVICES INC |
| 元件分类： | PROM |
| 英文描述： | 64 Megabit (8 M x 8-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory with VersatileIOTM Control |
| 中文描述： | 8M X 8 FLASH 3V PROM, 120 ns, PDSO48 |
| 封装： | MO-142DD, TSOP-48 |
| 文件页数： | 25/52页 |
| 文件大小： | 1184K |
| 代理商： | AM29LV065DU121REE |
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24
Am29LV065D
January 10, 2002
Unlock Bypass Command Sequence
The unlock bypass feature allows the system to pro-
gram bytes to the device faster than using the stan-
dard program command sequence. The unlock
bypass command sequence is initiated by first writing
two unlock cycles. This is followed by a third write
cycle containing the unlock bypass command, 20h.
The device then enters the unlock bypass mode. A
two-cycle unlock bypass program command sequence
is all that is required to program in this mode. The first
cycle in this sequence contains the unlock bypass pro-
gram command, A0h; the second cycle contains the
program address and data. Additional data is pro-
grammed in the same manner. This mode dispenses
with the initial two unlock cycles required in the stan-
dard program command sequence, resulting in faster
total programming time.
Table 10
shows the require-
ments for the command sequence.
During the unlock bypass mode, only the Unlock By-
pass Program and Unlock Bypass Reset commands
are valid. To exit the unlock bypass mode, the system
must issue the two-cycle unlock bypass reset com-
mand sequence. The first cycle must contain the data
90h. The second cycle must contain the data 00h. The
device then returns to the read mode.
The device offers accelerated program operations
through the ACC pin. When the system asserts V
HH
on
the ACC pin, the device automatically enters the Un-
lock Bypass mode. The system may then write the
two-cycle Unlock Bypass program command se-
quence. The device uses the higher voltage on the
ACC pin to accelerate the operation.
Note that the
ACC pin must not be at V
HH
for operations other than
accelerated programming, or device damage may re-
sult.
Figure 3
illustrates the algorithm for the program oper-
ation. Refer to the Erase and Program Operations
table in the AC Characteristics section for parameters,
and
Figure 15
for timing diagrams.
Figure 3.
Program Operation
Chip Erase Command Sequence
Chip erase is a six bus cycle operation. The chip erase
command sequence is initiated by writing two unlock
cycles, followed by a set-up command. Two additional
unlock write cycles are then followed by the chip erase
command, which in turn invokes the Embedded Erase
algorithm. The device does
not
require the system to
preprogram prior to erase. The Embedded Erase algo-
rithm automatically preprograms and verifies the entire
memory for an all zero data pattern prior to electrical
erase. The system is not required to provide any con-
trols or timings during these operations.
Table 10
shows the address and data requirements for the chip
erase command sequence.
START
Write Program
Command Sequence
Data Poll
from System
Verify Data
No
Yes
Last Address
No
Yes
Programming
Completed
Increment Address
Embedded
Program
algorithm
in progress
Note:
See
Table 10
for program command sequence.
相关PDF资料 |
PDF描述 |
|---|---|
| AM29LV065DU121REEN | 64 Megabit (8 M x 8-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory with VersatileIOTM Control |
| AM29LV065DU121REI | 64 Megabit (8 M x 8-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory with VersatileIOTM Control |
| AM29LV065DU121REIN | 64 Megabit (8 M x 8-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory with VersatileIOTM Control |
| AM29LV065DU121RFE | 64 Megabit (8 M x 8-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory with VersatileIOTM Control |
| AM29LV065DU121RFEN | 64 Megabit (8 M x 8-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory with VersatileIOTM Control |
相关代理商/技术参数 |
参数描述 |
|---|---|
| AM29LV065DU90REF | 制造商:Spansion 功能描述:NOR Flash Parallel 3V/3.3V 64Mbit 8M x 8bit 90ns 48-Pin TSOP 制造商:Spansion 功能描述:IC SM FLASH 3V 64MB |
| AM29LV065DU90REF | 制造商:Spansion 功能描述:FLASH MEMORY IC |
| AM29LV065DU90REI | 制造商:Spansion 功能描述:NOR Flash Parallel 3.3V 64Mbit 8M x 8bit 90ns 48-Pin TSOP 制造商:Spansion 功能描述:IC, FLASH MEM, 64MBIT, 90NS, 48-TSOP, Memory Type:Flash, Memory Size:64Mbit, Mem |
| AM29LV065DU-90REI | 制造商:Advanced Micro Devices 功能描述:NOR Flash, 8M x 8, 48 Pin, Plastic, TSSOP |
| AM29LV065DU90RWHF | 制造商:Spansion 功能描述: |
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