Publication#
23544
Issue Date:
February 16, 2006
Rev:
C
Amendment:
2
Refer to AMD’s Website (www.amd.com) for the latest information.
Am29LV065D
64 Megabit (8 M x 8-Bit) CMOS 3.0 Volt-only
Uniform Sector Flash Memory with VersatileIO
TM
Control
DISTINCTIVE CHARACTERISTICS
■
Single power supply operation
— 3.0 to 3.6 volt read, erase, and program operations
■
VersatileIO
TM
control
— Device generates output voltages and tolerates input
voltages on the DQ I/Os as determined by the voltage
on V
IO
input
■
High performance
— Access times as fast as 90 ns
■
Manufactured on 0.23 μm process technology
■
CFI (Common Flash Interface) compliant
— Provides device-specific information to the system,
allowing host software to easily reconfigure for
different Flash devices
■
SecSi (Secured Silicon) Sector region
— 256-byte sector for permanent, secure identification
through an 16-byte random Electronic Serial Number
— May be programmed and locked at the factory or by
the customer
— Accessible through a command sequence
■
Ultra low power consumption (typical values at 3.0 V,
5 MHz)
— 9 mA typical active read current
— 26 mA typical erase/program current
— 200 nA typical standby mode current
■
Flexible sector architecture
— One hundred twenty-eight 64 Kbyte sectors
■
Sector Protection
— A hardware method to lock a sector to prevent
program or erase operations within that sector
— Sectors can be locked in-system or via programming
equipment
— Temporary Sector Unprotect feature allows code
changes in previously locked sectors
■
Embedded Algorithms
— Embedded Erase algorithm automatically
preprograms and erases the entire chip or any
combination of designated sectors
— Embedded Program algorithm automatically writes
and verifies data at specified addresses
■
Compatibility with JEDEC standards
— Pinout and software compatible with single-power
supply Flash
— Superior inadvertent write protection
■
Minimum 1 million erase cycle guarantee per sector
■
Package options
— 48-pin TSOP
— 63-ball FBGA
■
Erase Suspend/Erase Resume
— Suspends an erase operation to read data from, or
program data to, a sector that is not being erased,
then resumes the erase operation
■
Data# Polling and toggle bits
— Provides a software method of detecting program or
erase operation completion
■
Unlock Bypass Program command
— Reduces overall programming time when issuing
multiple program command sequences
■
Ready/Busy# pin (RY/BY#)
— Provides a hardware method of detecting program or
erase cycle completion
■
Hardware reset pin (RESET#)
— Hardware method to reset the device for reading array
data
■
ACC pin
— Accelerates programming time for higher throughput
during system production
■
Program and Erase Performance (V
HH
not applied to
the ACC input pin)
— Byte program time: 5 μs typical
— Sector erase time: 0.9 s typical for each 64 Kbyte
sector
■
20-year data retention at 125
°
C
— Reliable operation for the life of the system